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Distance between source and substrate and growth mode control in GaN nanowires synthesis  

Shin, T.I. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Lee, H.J. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Kang, S.M. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Yoon, D.H. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.18, no.1, 2008 , pp. 10-14 More about this Journal
Abstract
We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.
Keywords
GaN nanowires; Vapor phase epitaxy method; Atmospheric pressure growth; Synthesis mechanism;
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