• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.454-456
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• 2014

ferroelectric perovskite의 ferroelectricity를 유지하기 위해서는 oxygen vacancy를 조절해야 한다. BTO의 경우 Ti-O(vacancy site)-Ti의 align 방향에 따라 두 종류의 vacancy가 존재하는데, Ti-O-Ti가 c-axis와 평행한 경우 BTO의 ferroelectricity가 약해진다. 본 연구에서는 BTO에 ab-biaxial strain을 가해 보고, 그 결과 두 종류의 vacancy formation energy가 어떻게 변화하는지 확인하였다. 그 결과 a, b-axis의 격자 상수가 증가하면 $V_b$가 $V_c$에 비해 안정해진다는 사실을 확인하였다. 이는 BTO의 oxygen vacancy의 vacancy site에 vacancy로 인해 남는 전자가 국지화되어 Ti-vacancy site 간 인력과 Ti-Ti간 반발력이 균형을 이룰 때 vacancy의 에너지가 낮아지기 때문이다.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.308-312
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• 2016

2차원 화합물 반도체인 GaS single tetralayer에 존재하는 vacancy defect의 원자구조 및 전자구조 특성을 제일원리계산을 이용하여 연구하였다. 고립된 Ga과 S vacancy를 모델링하기 위해, GaS $4{\times}4$ supercell을 이용하였고 각 vacancy에 대해 symmetry-preserving 구조와 broken symmetry 구조들의 에너지를 계산하여 가장 안정한 결함 원자 구조를 결정하였다. Ga-rich, S-rich condition에서의 formation energy 계산을 통해 vacancy 구조의 생성 가능성을 예측하였다. 안정한 vacancy 구조들에 대해 projected density of states (PDOS)를 clean GaS의 PDOS와 비교 분석함으로써 vacancy에 의한 defect states들을 찾고, 결과적으로 나타나는 전자구조 특성의 변화를 규명하였다.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.21-24
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• 2017

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.878-884
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• 1991

The mobility and diffusivity in an edge dislocation in an FCC crystal formed by the removal of one half of a (100) plane were evaluated in an applied field by analyzing a vacancy tight binding model using Stark's matrix technique. A model of an edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge of the extrac half plane of ions was considered. The model considered a tight binding approximation of the vacancy to the compressed region of the core and carried the calculation to the limit of an infinite length of dislocation. The diffusivity and the ratio of mobility to diffusivity were found to increase without bounds in the limit where the correlation factor becomes zero. In contrast, as the correlation factor became unity, the diffusivity became zero and the ratio of mobility to diffusivity became unity associated with the uncorrelated limit of 1/kT. This implied that the phenomenon was not unique to the crystal structure but was unique to edge dislocations with vacancy tight binding.

• Design & Manufacturing
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• v.12 no.1
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• pp.1-6
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• 2018

In this study, we calculated the redistribution of vacancy concentration in metal specimens induced by stress-induced diffusion at a high temperature. To deduce the governing equation, we associated the unit volume change equation of strains with a differential equation of vacancy concentration as a function of stress using the stress-strain relationship. In this governing equation, we considered stress as the only chemical potential parameter to stay in the scope of this study, which provided the vacancy concentration equation as of stress gradient in metals. The equation was then mathematically delineated to derive a analytical solution for a transient, one-dimensional diffusion case. With the help of Korhonen's approximation and the boundary conditions, we successfully deduced a general solution from the governing equation. To visualize the feasibility of our solutions, we applied the solution to two different stress-induced cases - a rod with fixed concentrated stresses at both ends and a rod with varying concentrated stresses at both ends. Although it is necessary to legitimatized the model in the future for improvement, our results showed that the model can be used to interpret the location of structural defects, the formation of vacancy, and furthermore the high temperature behavior of metals.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.158-158
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• 1998

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.17-26
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• 1984

A computer program (DIFSIM: Diffusion SIMulator) was written to calculate the impurity profile, specifically boron and phosphorus, due to three different diffusion processes-predeposition, drive-in in inert ambient, and drive-in in oxidizing ambient. The vacancy mechanism including Fair and Tsai's theory for phosphDrus diffusion was widely incorporated for modeling various diffusion processes. The concentrationtependent oxidation rate was also explained using the vacancy model, while the oxidation - enhanced diffusion was mo dolled using catkins replacement mochanlsm . The simulation results using DIFSIM showed a fairly good agreement with the experimental data by adjusting some of the empirical parameters in the program. The results obtained using DIFSIM were compared with the results from SUPREM II.

• Journal of the Korea Society of Computer and Information
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• v.21 no.4
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• pp.89-96
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• 2016

In this paper, we study the relationship between vacancy duration and information items of a job posting by using generalized linear models and a decision tree analysis w.r.t. the three factors such as company characteristics, employment conditions, and constraints. The results indicate that the employment conditions rather than company characteristics are more influential to the vacancy duration. These effects are presumed to be based on the complex relations between the decisions of the employers and the job seekers. And in this paper we suggest the need to provide personalized and profiled labor market information tailored for a quick decision to job seekers and employers. Policy implication is that since employer's decision affects the vacation duration, employers may had better to provide a comprehensive labour market information including supply and demand of the required skills in order to reduce the time for judgment on the cost-effectiveness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.876-882
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• 2000

ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.