• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.454-456
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• 2014

ferroelectric perovskite의 ferroelectricity를 유지하기 위해서는 oxygen vacancy를 조절해야 한다. BTO의 경우 Ti-O(vacancy site)-Ti의 align 방향에 따라 두 종류의 vacancy가 존재하는데, Ti-O-Ti가 c-axis와 평행한 경우 BTO의 ferroelectricity가 약해진다. 본 연구에서는 BTO에 ab-biaxial strain을 가해 보고, 그 결과 두 종류의 vacancy formation energy가 어떻게 변화하는지 확인하였다. 그 결과 a, b-axis의 격자 상수가 증가하면 $V_b$가 $V_c$에 비해 안정해진다는 사실을 확인하였다. 이는 BTO의 oxygen vacancy의 vacancy site에 vacancy로 인해 남는 전자가 국지화되어 Ti-vacancy site 간 인력과 Ti-Ti간 반발력이 균형을 이룰 때 vacancy의 에너지가 낮아지기 때문이다.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.308-312
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• 2016

2차원 화합물 반도체인 GaS single tetralayer에 존재하는 vacancy defect의 원자구조 및 전자구조 특성을 제일원리계산을 이용하여 연구하였다. 고립된 Ga과 S vacancy를 모델링하기 위해, GaS $4{\times}4$ supercell을 이용하였고 각 vacancy에 대해 symmetry-preserving 구조와 broken symmetry 구조들의 에너지를 계산하여 가장 안정한 결함 원자 구조를 결정하였다. Ga-rich, S-rich condition에서의 formation energy 계산을 통해 vacancy 구조의 생성 가능성을 예측하였다. 안정한 vacancy 구조들에 대해 projected density of states (PDOS)를 clean GaS의 PDOS와 비교 분석함으로써 vacancy에 의한 defect states들을 찾고, 결과적으로 나타나는 전자구조 특성의 변화를 규명하였다.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.21-24
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• 2017

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

• 한국세라믹학회지
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• 제28권11호
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• pp.878-884
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• 1991

The mobility and diffusivity in an edge dislocation in an FCC crystal formed by the removal of one half of a (100) plane were evaluated in an applied field by analyzing a vacancy tight binding model using Stark's matrix technique. A model of an edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge of the extrac half plane of ions was considered. The model considered a tight binding approximation of the vacancy to the compressed region of the core and carried the calculation to the limit of an infinite length of dislocation. The diffusivity and the ratio of mobility to diffusivity were found to increase without bounds in the limit where the correlation factor becomes zero. In contrast, as the correlation factor became unity, the diffusivity became zero and the ratio of mobility to diffusivity became unity associated with the uncorrelated limit of 1/kT. This implied that the phenomenon was not unique to the crystal structure but was unique to edge dislocations with vacancy tight binding.

• Design & Manufacturing
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• 제12권1호
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• pp.1-6
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• 2018

In this study, we calculated the redistribution of vacancy concentration in metal specimens induced by stress-induced diffusion at a high temperature. To deduce the governing equation, we associated the unit volume change equation of strains with a differential equation of vacancy concentration as a function of stress using the stress-strain relationship. In this governing equation, we considered stress as the only chemical potential parameter to stay in the scope of this study, which provided the vacancy concentration equation as of stress gradient in metals. The equation was then mathematically delineated to derive a analytical solution for a transient, one-dimensional diffusion case. With the help of Korhonen's approximation and the boundary conditions, we successfully deduced a general solution from the governing equation. To visualize the feasibility of our solutions, we applied the solution to two different stress-induced cases - a rod with fixed concentrated stresses at both ends and a rod with varying concentrated stresses at both ends. Although it is necessary to legitimatized the model in the future for improvement, our results showed that the model can be used to interpret the location of structural defects, the formation of vacancy, and furthermore the high temperature behavior of metals.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.158-158
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• 1998

• 대한전자공학회논문지
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• 제21권6호
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• pp.17-26
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• 1984

Predeposition, 질소분위기 drive-in과 산소분위기 drive-in 공정에 의한 실리콘내에서의 boron과 Phosphorus의 일차원적 분포를 implicit 방법과 SOR(successive over-relaxation)방법을 이용하여 산출해 내는 컴퓨터 프로그램 (DIFSIM)을 작성하였다. 확산공정의 모델로는 vacancy mechanism을 사용하였으며, 특히 phosphorus의 경우에는 Fair와 Tsai의 이론을 이용하였다. 불순물 농도에 따른 산화막의 성장속도는 vacancy mechanism에 의하였으며, 산화에 의한 확산공정에의 영향(OED ; oxidation-enhanced diffusion)은 Watkins replacement mechanism으로 modelling하였다. DIFSIM을 이용한 결과는 실험결과와 상당히 잘 일치하였으며, SUPREM II외 결과와도 비교하여 보았다.

• 한국컴퓨터정보학회논문지
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• 제21권4호
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• pp.89-96
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• 2016

In this paper, we study the relationship between vacancy duration and information items of a job posting by using generalized linear models and a decision tree analysis w.r.t. the three factors such as company characteristics, employment conditions, and constraints. The results indicate that the employment conditions rather than company characteristics are more influential to the vacancy duration. These effects are presumed to be based on the complex relations between the decisions of the employers and the job seekers. And in this paper we suggest the need to provide personalized and profiled labor market information tailored for a quick decision to job seekers and employers. Policy implication is that since employer's decision affects the vacation duration, employers may had better to provide a comprehensive labour market information including supply and demand of the required skills in order to reduce the time for judgment on the cost-effectiveness.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.876-882
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• 2000

ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.

• 한국결정성장학회지
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• 제11권3호
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• pp.89-95
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• 2001

규소 결정의 용융 온도 근처인 $1350^{\circ}C$에서 Ar과 $O_{2}$gas를 이용하여 규소 wafer의 열처리시 vacancy ty[e 결함의 거동에 대해 알아보았다. 이 열처리에서는 wafer의 표면보다 wafer내부에서 결함의 용해속도가 매우 높음을 확인하였다. 이는 $1350^{\circ}C$에서는 규소내의 평형산소농도가 대부분의 CZ silicon에서의 산소농도보다 높아 산소의 understaturation현상과 silicon interstitial농도의 영향에 기인된 것으로 예상된다. 열처리 분위기의 영향을 알아보기 위하여 Ar과 $O_{2}$ 분위기에서 열처리한 결과 vacancy type 결함의 용해속도는 wafer의 내부에서는 차이가 없었고, wafer의 표면에서는 Ar이 $O_{2}$의 경우보다 결함의 용해속도가 높았다. $O_{2}$의 경우에는 표면산화막 성장시 유입된 silicon interstitial의 농도가 높아 결함의 용해속도가 떨어지는 것으로 판단된다. 이는 기존 연구에서 예상된 silicon interstitial이 vacancy cluster로 알려진 결정결함의 제거에 기여한다는 예상과는 상반된다. 본 연구의 결과 silicon interstitial의 존재는 void외부 산화막의 용해속도를 늦추어 결함 용해속도를 떨어뜨리는 것으로 예상된다.