• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• Journal of Sericultural and Entomological Science
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• v.36 no.1
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• pp.58-61
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• 1994

This study was carried out to investigate the physical characteristics of stocking knitted with silk/nylon(S/N) compound yarn. In SEM observation, it was found that most part of S/N stocking was well interlaced between silk and nylon yarn. There was no difference between S/N stocking and nylon stocking in shrinkage at warm water and compressive resilience. The suction height and absorbability of S/N stocking was 4~8 times and 3 times higher than that of nylon stocking, respectively. According to the wearing test survey, most of wearers answered that the warmth, the hand and the feeling cool of S/N stocking were better than those of nylon stocking but reversed in elasticity, and they gave sprit opinion on durability responding good impression in total feeling of S/N stocking.

• Journal of the Chungcheong Mathematical Society
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• v.24 no.4
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• pp.807-824
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• 2011

It has been proved that if $\mathbb{X}^{(s,s)}$ is the union of two linear star-configurations in $\mathbb{P}^2$ of type $s{\times}s$, then $(I_{\mathbb{X}^{(s,s)}})_s{\neq}\{0\}$ for s = 3, 4, 5, and $(I_{\mathbb{X}^{(s,s)}})_s=\{0\}$ for $s{\geq}6$. We extend $\mathbb{P}^2$ to $\mathbb{P}^n$ and show that if $\mathbb{X}^{(s,s)}$ is the union of two linear star-configurations in $\mathbb{P}^n$, then $(I_{\mathbb{X}^{(s,s)}})_s=\{0\}$ for $n{\geq}3$ and $s{\geq}3$. Using this generalization, we also prove that the secant variety $Sec_1(Split_s(\mathbb{P}^n))$ has the expected dimension 2ns + 1 for $n{\geq}3$ and $s{\geq}3$.

• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.63-68
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• 2006

For the almost co티am convergent series $S_n$ of independent random variables, by investigating the limiting behavior of the tail series, $T_n=S-S_{n-1}=\sum_{i=n}^{\infty}X_i$, the rate of convergence of the series $S_n$ to a random variable S is studied in this paper. More specifically, the equivalence between the tail series weak law of large numbers and a limit law is established for a quasi-monotone decreasing sequence, thereby extending a result of Previous work to the wider class of the norming constants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.10-14
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• 2008

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.4
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• pp.18-23
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• 1976

We have obtained the solution of van der Pol's equation characterized by an arctangent nonlinearity, using the perturbation method by writing periodicity conditions: $$X^{(n)}(2{\pi})-X^{(n)}(0)=0$$ $$X^{(n)'}(2{\pi})-X^{(n)'}(0)=0 (n=0,1,2......)$$ together with the starting condition: $$X^{(n)}(\frac{\pi}{2})=0,\;X^{(n)}'(\frac{\pi}{2})=-R^{(n)}$$. Our results agree with Liapunov's theorem and our calculated value is more similar to Murata's measured value than Murata's calculated value.

• Journal of the Korean Chemical Society
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• v.36 no.2
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• pp.318-323
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• 1992

Following seven new nucleophilic adducts of sulfilimine compounds were prepared by the addition of 1-methyl-5-mercapto-1,2,3,4-tetrazole to vinylsulfilimine derivatives; S-Phenyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine, S-p-tolyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine, S-m-tolyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine, S-p-chlorophenyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine, S-p-bromophenyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine, S-p-methoxyphenyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine and S-p-nitrophenyl-S-2-(1-methyl-1,2,3,4-tetrazole-5-thio)-ethyl-N-p-tosylsulfilimine. The structures of these adducts were confirmed by elemental analyses, MP, UV, IR-and NMR-Spectra.

• Journal of The Korean Astronomical Society
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• v.44 no.6
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• pp.209-215
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• 2011

In this paper, the long-term hemispheric variation of the polar faculae is investigated. It is found that, (1) both the N-S asymmetry and N-S asynchrony of the polar faculae exhibit a long-term persistence, which suggests that they should not be regarded as a stochastic phenomenon; (2) both the N-S asynchrony and N-S asymmetry of the polar faculae are functions of the latitude, implying that the N-S asynchrony of the polar faculae is related to the N-S asymmetry of the polar faculae; (3) from a long-term view, the dominant hemisphere of the polar faculae seems to have close connection with the phase-leading hemisphere of the polar faculae.

• Bulletin of the Korean Mathematical Society
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• v.52 no.3
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• pp.1007-1025
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• 2015

Let $\mathbb{N}_0$ be the set of non-negative integers, and let P(n, l) denote the set of all weak compositions of n with l parts, i.e., $P(n,l)=\{(x_1,x_2,{\cdots},x_l){\in}\mathbb{N}^l_0\;:\;x_1+x_2+{\cdots}+x_l=n\}$. For any element $u=(u_1,u_2,{\cdots},u_l){\in}P(n,l)$, denote its ith-coordinate by u(i), i.e., $u(i)=u_i$. A family $A{\subseteq}P(n,l)$ is said to be t-intersecting if ${\mid}\{i:u(i)=v(i)\}{\mid}{\geq}t$ for all $u,v{\epsilon}A$. A family $A{\subseteq}P(n,l)$ is said to be trivially t-intersecting if there is a t-set T of $[l]=\{1,2,{\cdots},l\}$ and elements $y_s{\in}\mathbb{N}_0(s{\in}T)$ such that $A=\{u{\in}P(n,l):u(j)=yj\;for\;all\;j{\in}T\}$. We prove that given any positive integers l, t with $l{\geq}2t+3$, there exists a constant $n_0(l,t)$ depending only on l and t, such that for all $n{\geq}n_0(l,t)$, if $A{\subseteq}P(n,l)$ is non-trivially t-intersecting, then $${\mid}A{\mid}{\leq}(^{n+l-t-l}_{l-t-1})-(^{n-1}_{l-t-1})+t$$. Moreover, equality holds if and only if there is a t-set T of [l] such that $$A=\bigcup_{s{\in}[l]{\backslash}T}\;A_s{\cup}\{q_i:i{\in}T\}$$, where $$A_s=\{u{\in}P(n,l):u(j)=0\;for\;all\;j{\in}T\;and\;u(s)=0\}$$ and $$q_i{\in}P(n,l)\;with\;q_i(j)=0\;fo\;all\;j{\in}[l]{\backslash}\{i\}\;and\;q_i(i)=n$$.

• Bulletin of the Korean Chemical Society
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• v.23 no.12
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• pp.1699-1701
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• 2002