• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.312-316
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• 2013

In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.117-121
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• 2018

Perovskite solar cells have received increasing attention in recent years because of their outstanding power conversion efficiency (exceeding 22%). However, they typically contain toxic Pb, which is a limiting factor for industrialization. We focused on preparing Pb-free perovskite films of Ag-Bi-I trivalent compounds. Perovskite thin films with improved optical properties were obtained by applying an anti-solvent (toluene) washing technique during the spin coating of perovskites. In addition, the surface condition of the perovskite film was optimized using a multi-step thermal annealing treatment. Using the optimized process parameters, $AgBi_2I_7$ perovskite films with good absorption and improved planar surface topography (root mean square roughness decreased from 80 to 26 nm) were obtained. This study is expected to open up new possibilities for the development of high performance $AgBi_2I_7$ perovskite solar cells for applications in Pb-free energy conversion devices.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.94-100
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• 2004

We fabricated textured Ag substrates for YBCO coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. Ag ingot, as an initial specimen, was prepared by plasma arc melting(PAM). Subsequently, the ingot was cold rolled to 100 ${\mu}{\textrm}{m}$ thick tape and annealed at temperatures of 600-80$0^{\circ}C$. The texture and surface morphology of the substrate were characterized by pole-figure and atomic force microscopy(AFM) profile, respectively. It was observed that a strong ｛110｝<110> texture was formed after annealing and its symmetry improved as annealing temperature increased. The full-width at half-maximum(FWHM) of ｛110｝<110> pole was as sharp as 10$^{\circ}$ for the substrate annealed at 80$0^{\circ}C$. On the other hand, it was found that the thermal grooving and faceting became remarkable as annealing temperature increased : root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for the epitaxial deposition of superconductor film.

• 접착 및 계면
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• 제10권1호
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• pp.17-22
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• 2009

Polymer thin films were prepared by radio frequency (RF) plasma polymerization of phthalic anhydride (PA). First, monomer vaporization temperature ($100{\sim}160^{\circ}C$) was optimized by evaluating the thermal properties of thin films using differential scanning calorimeter (DSC) and measuring the root-mean-square (RMS) roughness with atomic force microscope (AFM) at the fixed plasma power of 10 W and time of 5 min in a continuous-wave (CW) mode. Plasma power (5~20 W) was then optimized by measuring the film solubility in solvents such as toluene, acetone, dimethylsulfoxide (DMSO) and 1 methylpyrrolidine (NMP). Next, pulsed mode plasma polymerization was also studied by varying the duty cycle of on-time (5, 20%) under optimized conditions of continuous-wave (CW) mode ($120^{\circ}C$, 10 W) in order to increase the anhydride functional groups. Finally, polymer thin films were characterized by Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analyzer (TGA) and ${\alpha}$-step.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.727-730
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• 2004

In this paper, so as to investigate the influence of oxidizer for each metal film using the alumina-based slurry, we have peformed the W/Ti metal-CMP process by adding $H_2O_2$ as a representative oxidizer from 1 wt% to 9 wt%, respectively. As an experimental result, for the case of 5 wt% oxidizer added, the removal rates were improved and polishing selectivity of 1.4 : 1 was obtained. Also, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. Finally, atomic force microscope (AFM) measurements were carried out for the analysis of surface morphology and root mean square (RMS) roughness after CMP Process.

• 한국생산제조학회지
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• 제24권1호
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• pp.49-55
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• 2015

This paper reports solution-processed, high-efficiency organic light-emitting diodes (OLEDs) fabricated by a knife coating method under ambient air conditions. In addition, indium tin oxide (ITO), traditionally used as the anode, was substituted by optimizing the conductivity enhancement treatment of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films on a polyethylene terephthalate (PET) substrate. The transmittance and sheet resistance of the optimized PEDOT:PSS anode were 83.4% and $27.8{\Omega}/sq$., respectively. The root mean square surface roughness of the PEDOT:PSS anode, measured by atomic force microscopy, was only 2.95 nm. The optimized OLED device showed a maximum current efficiency and maximum luminous density of 5.44 cd/A and $8,356cd/m^2$, respectively. As a result, the OLEDs created using the PEDOT:PSS anode possessed highly comparable characteristics to those created using ITO anodes.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.289-292
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• 2015

The etching processes of glass in aqueous hydrofluoric acid (HF) solutions were used to improve the current density of solar cell. In this study, the textured glass substrate has been etched by solution and the $TiO_2$ thin films have been prepared on this textured glass. After the $TiO_2$ film deposition the surface has been etched by HF under different concentration and the etched $TiO_2$ thin films had a longer electron lifetime and higher haze ratio as well as light scattering, resulting in 1.7 times increment of dye-sensitized solar-cell(DSSC) efficiency. Increases in the surface root-mean-square roughness of glass substrates from 80 nm to 1774 nm enhanced haze ratio in above 300 nm wavelength. In particular, haze ratio of etched $TiO_2$ films on textured glass showed gradually increasing tendency at 550 nm wavelength by increasing of HF concentration up to 10M, suggesting a formation of crater with various sizes on its surface.

• 한국초전도ㆍ저온공학회논문지
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• 제4권2호
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• pp.21-26
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• 2002

Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.137-141
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• 2009

AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.