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Deposition of $CeO_2$ buffer layer for YBCO coated conductors on biaxially textured Ni substrate by MOCVD technique  

김호진 (성균관대 대학원 신소재공학과)
주진호 (성균관대 금속재료공학부)
전병혁 (한국원자력연구소 원자력재료기술개발부)
정충환 (한국원자력연구소 원자력재료기술개발부)
박순동 (한국원자력연구소 원자력재료기술개발부)
박해웅 (한국기술교육대학교 신소재공학과)
홍계원 (한국산업기술대학교 전자공학부)
김찬중 (한국원자력연구소 원자력재료기술개발부)
Publication Information
Progress in Superconductivity and Cryogenics / v.4, no.2, 2002 , pp. 21-26 More about this Journal
Abstract
Textured CeO2 buffer layers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition (MOCVD). The degree of texture of deposited $CeO_2$ films was strong1y dependent on the deposition temperature (Td) and oxygen Partial Pressure(PO2). ($\ell$00) textured $CeO_2$ films were well deposited at T=500~52$0^{\circ}C$. PO2=0.90~3.33 Torr. The surface morphology showed that the films consisted of columnar CeO2 films grown from the Ni substrates. The root mean square roughness of CeO$_2$ films estimated by atomic force microscopy(AFM) increased as the deposition temperature(Td) increa- sed. The growth rate of the $CeO_2$ films deposited at T=52$0^{\circ}C$ and PO2=2.30 Torr was 150~200 nm/min that was much faster than that of other Physical deposition methods.
Keywords
$CeO_2$ buffer layer; metalorganic chemical vapor deposition(MOCVD); deposition temperature (Td); oxygen partial Pressure(PO2);
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