한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Oxidizer modify에 의한 Metal CMP 특성

Metal CMP Characteristics by Oxidizer Modification

  • 박성우 (대불대학교 전기전자공학과) ;
  • 김철복 (동성A&T주식회사) ;
  • 김상용 ((주)동부 아남 반도체) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 장의구 (중앙대학교 전자전기공학부) ;
  • 서용진 (대불대학교 전기전자공학과)
  • 발행 : 2004.11.11
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초록

In this paper, so as to investigate the influence of oxidizer for each metal film using the alumina-based slurry, we have peformed the W/Ti metal-CMP process by adding $H_2O_2$ as a representative oxidizer from 1 wt% to 9 wt%, respectively. As an experimental result, for the case of 5 wt% oxidizer added, the removal rates were improved and polishing selectivity of 1.4 : 1 was obtained. Also, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. Finally, atomic force microscope (AFM) measurements were carried out for the analysis of surface morphology and root mean square (RMS) roughness after CMP Process.

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