• Title/Summary/Keyword: Room temperature fabrication

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Fabrication of Nanocomposite Powders by Sonochemical Method

  • Hayashi, Yamato;Sekino, Tohru;Niihara, Koichi
    • Journal of Powder Materials
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    • v.8 no.3
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    • pp.207-209
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    • 2001
  • Nano particles have recently been a major research interest, motivated by their unusual physical and chemical properties. Such particles can be synthesized using physical and chemical methods. The physical methods need expensive installation like vacuum induction furnace, whereas in chemical methods the process in generally very simple and low cost. In this study, simple and new fabrication process by using ultrasound was investigated to prepare the nano-sized metal particles on various powders at room temperature.

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A Study on Fabrication of Piezorresistive Pressure Sensor (벌크 마이크로 머쉬닝에 의한 다결정 실리콘 압력센서 제작 관한 연구)

  • 임재홍;박용욱;윤석진;정형진;윤영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.677-680
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    • 1999
  • Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

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Fabrication of Hydroxyapatite-coated Zirconia by Room Temperature Spray Process and Microstructural Change by Heat-treatment (상온 분사법에 의한 수산화아파타이트 코팅 지르코니아의 제조 및 미세구조에 미치는 열처리 효과)

  • Lee, Jong Kook;Eum, Sangcheol;Kim, Jaehong;Jang, Woo Yang
    • Journal of the Korean Society for Heat Treatment
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    • v.28 no.1
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    • pp.17-23
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    • 2015
  • Hydroxyapatite coatings were fabricated by a room temperature spray method on zirconia substrates and the influence of heat-treatment on their microstructure was also investigated. Phase composition of coated hydroxyapatite films was similar to the starting powder, but the grain size of hydroxyapatite particles was reduced to the size of nano-scale about 100 nm. Grain size, particle compactness, and adhesiveness to zirconia of hydroxyapatite coatings were increased with heat-treatment temperature, but some of cracks by heat-treatment above $1100^{\circ}C$ were initiated between hydroxyapatite coatings and zirconia substrate. Heat-treated hydroxyapatite layers show the dissolution in SBF solution for 5 days. Hydroxyapatite-coated specimen heat-treated at $1100^{\circ}C$ for 1 h has a good biocompatibility, which specimen induced the nanocrystalline hydroxyapatite precipitates on the coating surface by the immersion in SBF solution for 5 days.

An Experimental Study for Drawing of Optimal Process Condition in the SLS Process (SLS 공정에서 최적 공정 조건 도출을 위한 실험적 연구)

  • Bae, Sung-Woo;Yoo, Seong-Yeon;Kim, Dong-Soo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.3
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    • pp.516-524
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    • 2012
  • Selective Laser Sintering(SLS) system consists of various element technologies. Main components of the system include a position control system, a speed control system of the roller, and nitrogen atmosphere furtherance for the powdered sintering. Other systems which make the core of the SLS system are build room and the feed room for powder epitaxial, a temperature control system, and a scan path generator for the laser. The powder material for laser sintering is necessary to produce prototypes in Solid Freeform Fabrication(SFF) based on SLS process. This powder material is sintered in powder room using $CO_2$ laser after spreading evenly using roller to reproduce mold via SFF. This study addresses an SFF system by using the SLS process which applies single laser system to enable manufacturing of 3D shape. And to evaluate applicability of the single laser system, experiments were conducted with optimal fabricating process.

The Microfluidic Device using Viscosity Deviation of Magnetic Fluids Due to Temperature Changes (자성유체의 온도에 따른 점성 변화를 이용한 미소 유체 소자)

  • Choi, Bum-Kyoo;Oh, Jae-Geun;Ahn, Jeong-Jae
    • Journal of Sensor Science and Technology
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    • v.13 no.6
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    • pp.473-478
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    • 2004
  • This study focused on the charateristic of magnetic fluids, the viscosity deviation of magnetic fluids due to temperature changes, and fabrication of a 'purely' liquid type microvalve. The viscosity of magnetic fluids decreases sharply during increasing of temperature. The viscosity of magnetic fluids is rated 1,000 cP at the room temperature and 25 cP when the temperature reaches $100^{\circ}C$. Briefly, it is remarkable that the fluid flow can be controlled by the temperature and this characteristic can be adopted to the microfluidics as a microvalve. The fabrication of a liquid type microvalve is more easy than solid state microvalves and which can increase an efficiency of the controlability with respect to the thermo-pneumatic micropump which is studied broadly for many years. When the magnetic fluid used as a sealant for high level sealing, the pressure leakage is less than solid state microvalve. The experimental results show that the pressure drop in microchannel, filled with the magnetic fluid, is significant in the temperature range of $20^{\circ}C{\sim}50^{\circ}C$ and this result explains why the use of magnetic fluids is possible as a microvalve searcher uses this characteristics. Well known thermo-pnumatic.

Room Temperature Preparation of Electrolytic Silicon Thin Film as an Anode in Rechargeable Lithium Battery (실리콘 상온 전해 도금 박막 제조 및 전기화학적 특성 평가)

  • Kim, Eun-Ji;Shin, Heon-Cheol
    • Korean Journal of Materials Research
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    • v.22 no.1
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    • pp.8-15
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    • 2012
  • Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

SOI Structures Formed at Room Temperature Using FIPOS Technique (FIPOS 기술을 이용한 SOI 구조의 실온제조)

  • Choi, Kwang-Don;Lee, Jong-Byung;Sohn, Byung-Ki;Shin, Jong-Ug
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1304-1314
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    • 1988
  • An experimental study of the influences of HF concentration, current density, reaction time and the silicon surface, on the formation and properties of porous silicon are reported. The SOI (Silicon-On-Insulator) strip lines with 100 um width are fabricated at room temperature by anodic oxidation of PSL (Porous Silicon Layers). The stress on the silicon island induced by the anodic oxidation can be avoided by the two-step PSL formation technique. At the final step of IC fabrication process, device isolation will be achieved at room temperature by this method.

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Fabrication and Properties of Vanadium Oxide Thin Films for Microbolometer by using Plasma Atomic Layer Deposition Method (플라즈마 ALD법에 의해 제조된 마이크로볼로미터용 바나듐 산화막의 제작 및 특성)

  • Yun, Hyeong-Seon;Jung, Soon-Won;Jeong, Sang-Hyun;Kim, Kwang-Ho;Choi, Chang-Auck;Yu, Byoung-Gon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.156-161
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    • 2008
  • The fabrication of vanadium oxide films directly on Si(100) substrates by plasma atomic layer deposition(ALD) with vanadium oxytriisopropoxide(VOIP) and oxygen as the reactants have been performed at temperature ranging from 250 to $450^{\circ}C$. Growth rate of vanadium oxide was $2.8{\AA}$/cycle at $300{\sim}400^{\circ}C$ defined as ALD acceptable temperature window, Vanadium oxide has been shown the different phases at $250^{\circ}C$ and more than $300^{\circ}C$. It has been confirmed that the phase of the films deposited at $250^{\circ}C\;was\;V_2O_5$ type and that of the films above $300^{\circ}C\;was\;VO_2(T)$ type measured at room temperature, respectively. A large change in resistance and small temperature hysteresis corresponding to a temperature has been observed in the vanadium oxide film deposited at temperature $350^{\circ}C$.

Fabrication of excimer laser annealed poly-si thin film transistor by using an elevated temperature ion shower doping

  • Park, Seung-Chul;Jeon, Duk-Young
    • Electrical & Electronic Materials
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    • v.11 no.11
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    • pp.22-27
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    • 1998
  • We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

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Viscoelastic analysis of residual stresses in a unidirectional laminate

  • Lee, Sang Soon;Sohn, Yong Soo
    • Structural Engineering and Mechanics
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    • v.2 no.4
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    • pp.383-393
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    • 1994
  • The residual stress distribution in a unidirectional graphite/epoxy laminate induced during the fabrication process is investigated at the microstress level within the scope of linear viscoelasticity. To estimate the residual stresses, the fabrication process is divided into polymerization phase and cool-down phase, and strength of materials approach is employed. Large residual stresses are not generated during polymerization phase because the relaxation modulus is relatively small due to the relaxation ability at this temperature level. The residual stresses increase remarkably during cool-down process. The magnitude of final residual stress is about 80% of the ultimate strength of the matrix material at room temperature. This suggests that the residual stress can have a significant effect on the performance of composite structure.