• Journal of the Institute of Electronics Engineers of Korea CI
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• v.40 no.4
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• pp.206-213
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• 2003

In this paper, we propose a design method of automatic thickness measurement and defect inspection system, which measures the thickness of the autoclaved lightweight concrete block and inspects the defect on a real-time basis. The image processing system was established with a CCD camera, an image grabber, and a personal computer without using assembled measurement equipment. For the realization of proposed algorithm, the preprocessing method that can be applied to overcome uneven lighting environment, threshold decision method, unit length decision method in uneven condition with rocking objects, and the curvature calibration method of camera using a constructed grid are developed. From the experimental results, we have found that the required measurement accuracy specification is sufficiently satisfied using our proposed method.

• Physical Therapy Korea
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• v.20 no.3
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• pp.27-35
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• 2013

The aim of this study was to compare the electromyographic (EMG) activity levels of the scapular upward rotators [upper trapezius (UT), lower trapezius (LT), and serratus anterior (SA)] and other scapular muscles [posterior deltoid (PD), levator scapulae (LS), and infraspinatus (IS)] during isometric lower trapezius exercises. Twenty males with no medical history of shoulder pain or upper extremity disorders were recruited for this study. EMG activity was recorded from the UT, LT, SA, PD, LS, and IS while subjects performed three different exercises: Prone arm lift (PAL), Backward rocking diagonal arm lift (BRDAL), Modified Prone Cobra (MPC). One-way analysis of variance (ANOVA) was used to determine any significant differences among the three exercises. A lower relative activation of UT, LT, and SA was seen with the MPC than with the other exercises (p<.05). The relatively lower activation of the UT identified, the MPC exercise as the preferred choice for preferential strengthening the LT (p<.05). However, a higher activation in the PD, LS, and IS occurred with the MPC than with the other exercises (p>.05). The recruitment pattern of synergist varied depending on the exercise posture. These findings suggest that exercise posture is an important factor in the selection of strengthening exercise for weak muscle.

• International Journal of High-Rise Buildings
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• v.7 no.3
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• pp.255-264
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• 2018

This paper introduces three distinctive means for the use of a 189-meter high damped structure ensuring safety against earthquake: 1. Realization of L-shaped elevational structural planning: The bottom and top of the tower have belt trusses and hat trusses respectively to restrain the bending deformation. Furthermore, large-capacity oil dampers (damping force 6,000 kN) are installed in the middle part of the tower to restrain the higher-mode deformation. 2. Realization of L-shaped planar structural planning: We devised a means of matching the centers of gravity and rigidity by adjusting planar rigidity. Moreover, viscous damping devices are located at the edges of the L-shaped plan, where torsional deformation tends to be amplified. We call this the "Damping Tail" system. 3. Composite foundation to equalize deformations under different loading conditions: We studied the vertical and horizontal deformations using sway-rocking and 3D FEM models including the ground, and applied multi-stage diameter-enlarged piles to the tower and a mat foundation to the podium to keep the foundations from torsional deformations and ensure structural safety.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.13-16
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• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.103-108
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• 2000

The texture of Al/Ti thin films deposited on low-dielectric polymer substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and SiO$_2$ by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and SiO$_2$ substrates was characterized by Transmission electron microscopy (TEM). hall thin films deposited on SiO$_2$ had stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM resealed that Brains of Ti films on SiO$_2$ substrates had grown perpendicular to the substrate, while the grains of Ti films on SiLK substrates were farmed randomly. The lower degree of 111 texture of Al thin films on low-k polymer was due to Ti underlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.229-229
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• 2010

We report a high crystalline nonpolar a-plane (11-20) GaN on r-plane (1-102) sapphire substrates with $+0.15^{\circ}$, $-0.15^{\circ}$, $+0.2^{\circ}$, $-0.2^{\circ}$ and $+0.4^{\circ}$ misoriented by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 5 periods the nonpolar a-plane InGaN/GaN (a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN layers with double crystal x-ray diffraction. The FWHM values of $+0.4^{\circ}$ misoriented sapphire substrate were decreased down to 426 arc sec for $0^{\circ}$ and 531 arc sec for $-90^{\circ}$, respectively. Also, the samples were characterized by photoluminescence (PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.269-273
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• 2001

W fabricated thin film using Na$_{0.5}$K$_{0.5}$NbO$_3$ volatile material by pulsed laser deposition (PLD) and studied characterization from EM, XRD, P-E. The density and scale of droplet, which is the defect of PLD, was investigated by SEM but large droplet was not found. The degree of assemble oriented C-axis measured with X-ray diffraction suggests that this film oriented C-axis achieved by $\theta$-2$\theta$ scan and rocking curves shows good self-assemble phenomenon, finally $\phi$-scan does that all of the four directions of the lattice in film equals to those of substrate. P-E hysteresis loop shows residual remnant polarization or saturation polarization value, but it is applicable to memories.ies.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Wind and Structures
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• v.7 no.1
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• pp.13-28
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• 2004

A method of numerical analysis without conducting 3D wind tunnel model tests was examined in our previous study for predicting vortex-induced oscillation of bridge girders with span-wise varying geometry. The aerodynamic damping forces measured for plural wind tunnel 2D models were used in the analysis. A further study was conducted to examine the precision of solution obtained by this method. First, the responses of vortex-induced oscillation of two rocking models and a taut-strip bridge girder model with span-wise varying geometry were measured. Next, the responses of these models were numerically analyzed by means of this method, and then a comparison was made between the obtained $Vr-A-{\delta}_a$ contour diagram of each 3D model in the wind tunnel test and the diagram in the numerical analysis. Since close correlations were observed between each two $Vr-A-{\delta}_a$diagrams obtained in the model test and in the analysis in cases where the 3D model did not have strong three-dimensionality, our findings revealed that the predicted solution proved to be reasonably accurate.