• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.9
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• pp.14-19
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• 2014

Recently, many renewable energy generating businesses are ongoing progress due to the introduction of the RPS(Renewable Portfolio Standards) as well as the needs of environmentally friendly energy resources. Researches on photovoltaic system are actively being processed since the photovoltaic system is relatively easy to install and becomes commercialized in many domestic application areas. Furthermore, the floating photovoltaic system is likely to be installed more actively since the conventional photovoltaic system requires relatively large areas of land. Also, the floating photovoltaic system is more efficient than photovoltaic system installed in land due to the operation in lower temperature. However, safety problems such as electric shock could arise since the cable should be installed in the water. In this paper, the leakage current and the voltage rising are measured and analyzed for the case when the cables are damaged connecting the floating photovoltaic system to the grid.

• ETRI Journal
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• v.38 no.1
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• pp.133-140
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• 2016

This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.

• Journal of IKEEE
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• v.23 no.2
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• pp.552-556
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• 2019

This paper present a capless low drop out regulator (LDO) that improves the load transient response characteristics by using a current regulator. A voltage regulator circuit is placed between the error amplifier and the pass transistor inside the LDO regulator to improve the current characteristics of the voltage line, The proposed fast transient LDO structure was designed by a 0.18 um process with cadence's virtuoso simulation. according to test results, the proposed circuit has a improved transient characteristics compare with conventional LDO. the simulation results show that the transient of rising increases from 1.954 us to 1.378 us and the transient of falling decreases from 19.48 us to 13.33 us compared with conventional capless LDO. this Result has improved response rate of about 29%, 28%.

• Journal of IKEEE
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• v.25 no.1
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• pp.201-205
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• 2021

In this paper present Low Drop-Out (LDO) regulator that improved load transient characteristics due to the push-pull detection structure. The response characteristic of the voltage delta value is improved due to the proposed push-pull sensing circuit structure between the input terminal of the LDO regulator pass transistor and the output terminal of the internal error amplifier. Voltage value has improved load transient characteristics than conventional LDO regulator. Compared to the conventional LDO regulator, it has an improved response speed of approximately 244 ns at rising time and approximately 90 ns at falling time. The proposed circuit was simulated by the samsung 0.13um process using Cadence's Specter and Virtuoso simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.469-470
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• 2008

We have studied electro-optic characteristics as a function of splay elastic constants ($K_{11}$) in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. When $K_{11}$ is increased from 7.7pN to 11.7pN, a maximum transmittance is slightly increased and rising time become a little bit fast. However, operating voltage and threshold voltage is independent. In opposition to rising time, decay time is not affected by $K_{11}$. We already know that $K_{11}$ affects tilt angle of liquid crystals. Therefore, on the occasion of high $K_{11}$, liquid crystals are mainly affected by twist deformation because the higher $K_{11}$, the less tilt angle. In the FFS device, high $K_{11}$ is favorable to reduce tilt angle in on state and thus improve rising response time.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.234-238
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• 1999

In order to radiate X-ray, the low ripple stabilized high voltage DC over the range of 40KV to 150KV is directly inflicted to X-ray tube. The energy characteristics of the radiated X-ray depend on the pulsating waveforms of the DC voltage supplied X-ray tube. In general, the low ripple voltage waveforms with fast rising times are required to increase with the dosage per unit time lest the exposure time should be longer in orde that the motion artifacts of an object may be eliminated in actual. The conventional types of X-ray generators were bulky in physical size and heavy in weight, and the control accuracies of the output voltages were not always satisfactory. The high frequency switching inverter and converter technology on power conversion and control systems have been greatly closed up introducing new power semiconductor devices. To decreasing the volume and the weight of high voltage transformer, and to stabilize ripple, a high frequency PWM inverter is connected between DC source and high voltage transformer. This paper describes the output characteristics according to stabilize ripple of X-ray tube voltage and compared the reproducibility, direcibility and doesage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.56-62
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• 2002

A new high speed and low voltage swing on-chip BUS using threshold voltage swing driver and dual sense amplifier receiver is proposed. The threshold voltage swing driver reduces the rising time in the bus to 30% of the full CMOS inverter driver and the dual sense amplifier receiver increases twice the throughput. of the conventional reduced-swing buses using sense amplifier receiver. With threshold voltage swing driver and dual sense amplifier receiver combined, approximately 60% speed improvement and 75% power reduction are achieved in the proposed scheme compared to the conventional full CMOS inverter for the on-chip bus.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.14-21
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• 2009

A digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a $0.18{\mu}m$ CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a $0.18{\mu}m$ CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.815-818
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• 1998

The Insulated Gate Bipolar Transistor has the characteristics of MOSFET and BJT. The characteristics of proposed device exhibit high speed switching, the voltage controlled property, and the low ON resistance. This hybrid device has been used and developed continuously in the power electronic engineering field. We can simulate many IGBT circuits, such as the motor drive circuit, the switching circuits etc, with PSpice. However, some problems in PSpice is that the IGBT is old-fashioned and is very difficult to get it. In this paper, the IGBT in PSpice is considered as the basic structure. We changed the valuse of base width, gate-drain overlaping area, device area, and doping concentration, then calculated MOS transconductance, ambipolar recombination lifetime etc. Using this resultant parameter, we could predict the transient response characteristicsof IGBT, for examplex, voltage overshoot, the rising curve of voltage, and the falling curve of current.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.264-268
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• 2003

This paper describes a high voltage high power DC power supply which has the ability of pulsed mode operation. The power supply Is constructed with several series connected power converters based on modified multilevel converters. The modified multilevel converters are suitable for the protection of frequent output short-circuit. The output dc power of the proposed converter can be disconnected from the load within several hundred microseconds at the instant of short-circuit fault. The rising time of the dc load voltage is as small as several hundred microseconds, and there is no overshoot of the do voltage because the dc output capacitors keep undischarged state. Analysis, simulations, and experiments are carried out to Investigate the operation and usefulness of the proposed scheme.