• Transactions of the Korean hydrogen and new energy society
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• v.17 no.2
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• pp.133-140
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• 2006

The performance of proton exchange membrane fuel cell was decreased by reverse voltage using fuel starvation. Performance decrease in local area could be affected by duration and extent of reverse voltage. Hydrogen and air stoichiometic ratio was used to find the experimental condition of abrupt voltage decrease. LabVIEW was used to make control logic of automatic load off system in preset voltage. Reverse voltage experiment was done down to -1.2 V at constant current condition. When fuel cell voltage was reached to preset voltage, electronic load was disconnected to make open circuit voltage for 1 minute. Fuel cell performance was checked every 5 cycle and the degree of performance decrease and/or recovery was estimated. Ohmic resistance and charge transfer resistance were increased and platinum surface area was reduced 41% after reverse voltage experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1033-1037
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• 2005

We have studied on the effect of the operation voltage according to the reverse twist for the different fringe field switching (FFS) structure. The FFS structure with a vertically patterned edge of the pixel electrode (VPP) has lower operation voltage comparing to the one with a horizontally patterned edge of the pixel electrode (HPP). The reason is like that the number of the pattern of the pixel edge for the VPP structure is one third comparing with the HPP structure and thus, there is small reverse twist area for the VPP structure. Actually, the reverse twist disturbs the twist of LC near adjacent active area, result that LCs near there have the unstable dynamics. That is, the operation voltage increases as the reverse twist area increases. Therefore, it is very important to design pixel electrode with a small reverse twist region for the FFS mode.

• Journal of Electrical Engineering and Technology
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• v.10 no.6
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• pp.2297-2306
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• 2015

This paper presents the development of a system with a reverse matrix converter (RMC) for permanent magnet synchronous motor (PMSM) drive and its effective control method. The voltage transfer ratio of the general matrix converter is restricted to a maximum value of 0.866, which is not suitable for applications whose source voltages are lower than the load voltages. The proposed RMC topology can step up the voltage without any additional components in the conventional circuit. Its control method is different from traditional matrix converter’s one, thus this paper proposes control schemes of RMC by means of controlling both the generator and motor side currents with properly designed control loop. The converter can have sinusoidal input/output current waveforms in steady state condition as well as a boosted voltage. In this paper, a hardware system with an RMC for a PMSM drive system is described. The performance of the system was investigated through experiments

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.4
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• pp.363-368
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• 2015

This paper deals with an improved current source using full-bridge converter type for thyristor valve test of HVDC system. The conventional high-current and low-voltage source of synthetic test circuit requires additional auxiliary power supply to provide the reverse voltage for the auxiliary thyristor valve during turn-off process. The proposed circuit diagram to provide the reverse voltage is extremely simple because no additional component is required. The reverse voltage can be obtained from the input DC voltage of the high-current and low-voltage power supply. The operation principle and design method of the proposed system are described. Simulation and experimental results in scaled down STC of 200 V, 30 A demonstrate the validity of the proposed scheme.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.19 no.1
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• pp.46-50
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• 1983

A reverse voltage commutating thyristor chopper was described. The chopper consists of commutating capacitor charging circuit and commutating thyristor. By superimposing the charged voltage on capacitor to load voltage. Powerful reverse voltage could be induced on main thyristor cathode. And in that wise the chopping action was performed without all the reactors of the proposed circuit. An energy recovery circuit was employed in the chopper circuit for recovering the energy that was consumed in main thyristor commutation. The operating principles of the chopper circuit was analyzed and experimental results were as following. I) All reactors were eliminated. ii) By applying energy recovery circuit to the chopper, 67% of the consumed energy was recovered to source. iii) Turn off time of the proposed chopper was derived as T=RC ln2.

• Archives of Reconstructive Microsurgery
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• v.10 no.1
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• pp.55-59
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• 2001

The hand is a frequently affected area in high voltage electrical burn injury as an input or output sites. Therefore, early debridement and synchronous flap coverage are generally accepted as a primary treatment of several electrical burns complicated by exposure of tendons, neurovascular structures, and bones. So, in order to establish convenient, promising methods for the reconstruction of hand defects in electrical burn patients, we performed various reverse forearm flaps. From March 1997 to February 2000, we reconstructed 12 cases of hand defects in high voltage electrical burn wounds with reverse forearm flaps. Reverse radial fasciocutaneous flap were 3 cases, reverse ulnar fasciocutaneous flap were 3 cases, reverse ulnar fasciocutaneous flap and STSG were 4 cases, reverse ulnar fascial flap and STSG were 2 cases. We successfully reconstructed hand defects in all 12 cases, and obtained following conclusions. 1 Various reverse forearm flaps provide well vascularized, profitable tissues and they require short operative time with relatively easy procedures. 2. Reverse fascial flap and STSG, reverse fasciocutaneous flap and STSG provide thin flaps with good aesthetics and minor donor site morbidity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.05a
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• pp.405-408
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 5$0^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. Measurement electrical parameters are forward turn-on voltage, reverse breakdown voltage, barrier height, saturation current, ideality factor, dynamic resistance acceding to junction concentration of substrates and temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation current and ideality factor were increased by substrates concentration variations. Reverse breakdown voltage and dynamic resistance were increased by temperature variations.