1 |
김상철, 김은동, '전력반도체 기술 및 시장동향', 전기전자재료학회지, 15권, 3호, p. 15, 2002
|
2 |
N. Keskitalo, A. Hallen, F. Masszi, and J. Olsson, 'Simulation of forward bias injection in proton irradiated silicon pn-junctions', Solid State Electronics, Vol. 39, No.7, p. 1087, 1996
DOI
ScienceOn
|
3 |
김은동, 장창리, 김상철, 김남균, '양성자 조사법에 의한 고속 사이리스터의 제조', 전기전자재료학회논문지, 17권, 12호, p. 1264, 2004
|
4 |
V. Benda, J. Gowar, and D. A. Grant, 'Power Semiconductor Devices Theory and Application', John Wiley & Sons Ltd, p. 1, 1999
|
5 |
P. Hazdra, K. Brand, J. Rubes, and J. Vobecky, 'Local lifetime control by light ion irradiation impact on blocking capability of power P-i-N diode', Microelectronics Journal, Vol. 32, p. 449, 2001
DOI
ScienceOn
|
6 |
P. Hazdra, J. Vobecky, and K. brand, 'Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques', Nuclear Instruments and Methods in Physics Research : Section B 186, p. 414, 2002
|
7 |
이강희, 김병길, 이용현, 백종무, 이재성, 배영호, '양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작', 전기전자재료학회논문지, 17권, 12호, p. 1308, 2004
|
8 |
S. Godey, E. Ntsoenzok, D. C. Schmidt, and J. F. Barbot, 'Effect of shallow donors induced by hydrogen on p+n junctions', Materials Science and Engineering B58, p. 108, 1999
|