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http://dx.doi.org/10.4313/JKEM.2005.18.11.1033

Study on the Effect of the Operation Voltage according to the Reverse Twist for the fringe Field Switching (FFS) Mode  

Kim, Mi-Sook (BOE_TFT_LCD_SBU 선행기술그룹)
Jung, Yeon-Hak (BOE_TFT_LCD_SBU 선행기술그룹)
Seen, Seung-Min (BOE_TFT_LCD_SBU 선행기술그룹)
Kim, Hyang-Yul (BOE_TFT_LCD_SBU 선행기술그룹)
Kim, Seo-Yoon (BOE_TFT_LCD_SBU 선행기술그룹)
Lim, Young-Jin (BOE_TFT_LCD_SBU 선행기술그룹)
Lee, Seung-Hee (전북대학교 신소재공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.11, 2005 , pp. 1033-1037 More about this Journal
Abstract
We have studied on the effect of the operation voltage according to the reverse twist for the different fringe field switching (FFS) structure. The FFS structure with a vertically patterned edge of the pixel electrode (VPP) has lower operation voltage comparing to the one with a horizontally patterned edge of the pixel electrode (HPP). The reason is like that the number of the pattern of the pixel edge for the VPP structure is one third comparing with the HPP structure and thus, there is small reverse twist area for the VPP structure. Actually, the reverse twist disturbs the twist of LC near adjacent active area, result that LCs near there have the unstable dynamics. That is, the operation voltage increases as the reverse twist area increases. Therefore, it is very important to design pixel electrode with a small reverse twist region for the FFS mode.
Keywords
Reverse tiwist; Vertically patterned pixel; Horizontally patterned pixel;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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