• Journal of IKEEE
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• v.19 no.1
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• pp.94-100
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• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.5
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• pp.327-333
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• 2019

This study analyzes the reverse recovery phenomenon of a semi-bridgeless rectifier (SBR) in an inductive power transfer (IPT) system for electric vehicles. Ideally, the reverse recovery phenomenon does not occur in a diode rectifier, however, in practical systems, the reverse recovery phenomenon occurs even when the SBR operates like a diode rectifier due to high operating frequency. Therefore, a practical analysis of operation modes for SBRs is presented in this study, considering the reverse recovery phenomenon, and the requirements for SBR switches are proposed. The analysis results are experimentally verified using a 3.3 [kW] IPT system prototype to which three different types of switches are applied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2572-2574
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• 1999

본논문은 제작된 다이오드 switching시 나타난 전류 증가현상을 관측하고 그 원인을 분석했다. 증가현상을 보이는 구조는 다이오드에 전자를 조사한 소자로 proton을 조사한 구조에 비해서 접합부근에 high defect density 영역이 형성된다. Reverse recovery시에 이영역에 높은 역방향 전계가 형성, 조사에 순간적으로 전류가 증가하게 한다.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.1857-1859
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• 1998

This paper proposes a circuit technique that reduces losses cauased by reverse-recovery characteristics of the diode in converters. In high voltage, high power, Reverse recovery characteristics of the diode gives large stresses to switching devices. To solve the problem, we propose a circuit with active snubber between diode and switch. By controling di/dt rate of thr diode, the proposed technique reduces the losses and the stresses of switching devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.189-191
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• 2018

This paper introduces a novel ZVS interleaved totem-pole PFC with the reduced circulating current and the reverse recovery current of the diodes. With the help of a simple auxiliary inductor, both ZVS turn-on of the main switches and soft turn-off of the body diodes can be achieved. In the proposed totem-pole PFC topology since the switching losses and the reverse recovery losses can be significantly reduced, the typical Si MOSFETs can be employed. In addition the circulating current is reduced by adjusting the switching frequency. The proposed PFC topology can be a low cost solution to achieve high efficiency in high power PFC applications. The validity and the feasibility of the proposed topology is verified by the experimental results with a 3.3kW interleaved totem-pole PFC converter.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.32 no.4
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• pp.72-78
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• 2009

Reverse logistics is the process of planning and controlling the recovery flow of end of life products. Industry is increasingly being confronted with the need to solve several reverse logistics issues because of not only stringent environmental legislations but also economic reasons. Recently, thanks to the advent of emerging technologies, such as RFID, enhancing the productivity of reverse logistics operations has been highlighted. The application of RFID technology is going beyond forward logistics, which is the delivery of manufactured goods to consumers, and being expanded, though not frequently yet, to reverse logistics, which includes return, recovery, reuse, reproduction and disposal. However, it requires a deep insight for the research of reverse logistics and new environment. In this regard, we studied effectiveness by applying RFID middleware technology to reverse logistics.

• Journal of Power System Engineering
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• v.16 no.3
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• pp.5-9
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• 2012

Novel mechanisms for Energy Recovery Devices are proposed to diminish the pressure loss in the high-pressure reverse-osmosis system. In the beginning, the state-of-the-art in the design of Energy Recovery Devices is reviewed and the features of each model are investigated. The direct-coupled axial piston pump(APP) and axial piston motor(APM) showed 39% energy recovery at operating pressure of reverse osmosis desalination systems, 60 bar. Meanwhile, the developed PM2D model, in which APM pistons are arranged parallel to those of APP, is more compact and showed higher efficiency in a preliminary test. Loss-reduction mechanisms employing rod piston and double raw valve port are additionally proposed to enhance the efficiency and durability of the device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.640-645
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• 2012

DC-DC converter and DC-AC inverter in a hybrid electric vehicle (HEV) generate the switching noise. It may be generated by the reverse recovery operation of the power diode in the switching circuit of the converter or the inverter. The shape of the reverse recovery region may be determined by both reverse time and recovery time in the diode. So, in this paper, the frequency spectrum of switching noise was estimated by the shape of the reverse recovery region and compared with the measured results. It shows that the meaningful region of the frequency spectrum is directly related with the reverse time.