• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.262-267
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• 2002

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

• 한국재료학회지
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• 제19권3호
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• pp.151-155
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• 2009

Micro-scale copper bumps for build-up PCB were electroplated using a pulse-reverse method. The effects of the current density, pulse-reverse ratio and brightener concentration of the electroplating process were investigated and optimized for suitable performance. The electroplated micro-bumps were characterized using various analytical tools, including an optical microscope, a scanning electron microscope and an atomic force microscope. Surface analysis results showed that the electroplating uniformity was viable in a current density range of 1.4-3.0 A/$dm^2$ at a pulse-reverse ratio of 1. To investigate the brightener concentration on the electroplating properties, the current density value was fixed at 3.0 A/$dm^2$ as a dense microstructure was achieved at this current density. The brightener concentration was varied from 0.05 to 0.3 ml/L to study the effect of the concentration. The optimum concentration for micro-bump electroplating was found to be 0.05 ml/L based on the examination of the electroplating properties of the bump shape, roughness and grain size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• 한국표면공학회지
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• 제39권5호
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• pp.223-228
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• 2006

The current efficiency of copper anode containing impurities in copper sulfate solution for electrorefining was studied at various current type such as direct current, variable current and periodic reverse current. The passivity behavior was investigated by galvanostatic technique. The results obtained were that current efficiency of variable current was higher than those of direct current and periodic reverse current. The increased current efficiency could be explained by the formation of slime structure with lower average resistance due to variable current. The frequency of various factors in variable current condition has a greatest effect on current efficiency. It appeared that frequency increased current efficiency when increased from 1 to 4, but further increases did not have an effect.

• 전기화학회지
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• 제13권4호
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• pp.277-282
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• 2010

자동차용 고분자전해질 연료전지의 열화는 시동 또는 정지 시에 'reverse-current condition'이라 불리는 현상에 의해 촉진된다. 연료전지 자동차의 운전 종료 후 장시간동안 주차를 해 두면, 대기 중의 공기가 스택 내로 서서히 유입되어 시간이 경과함에 따라 산소분압이 점차 높아져 궁극적으로는 연료극과 공기극의 유로가 모두 공기로 충진된다. 이때 재시동하면서 연료극으로 수소가 공급되면, 연료극 유로 내에 수소와 공기가 공존하게 되고, 연료극에 공기가 존재하는 부위의 공기극에 1.4 V 이상의 높은 전압이 발생하는데, 이를 reverse-current condition 이라고 하며 공기극의 탄소담지체와 백금 촉매 산화의 원인으로 작용한다. 본 연구에서는 재시동시 스택 내에 존재하는 산소의 농도에 따른 열화 현상을 규명하고자 하였다.

• ETRI Journal
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• 제38권2호
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• 농업과학연구
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• 제48권3호
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• pp.597-606
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• 2021

Due to the characteristics of the farmland in Korea, forward and reverse shift is the most used. The fatigue of farmers is caused by forward and reverse shifting with a manual transmission. Therefore, it is necessary to improve the convenience of forward and backward shifting. This study was a basic study on the development of a current control system for forward and reverse shifting of agricultural tractors using proportional control valves and a controller. A test bench was fabricated to evaluate the current control accuracy of the control system, and the stability of the controller was evaluated through CPU (central processing unit) load measurements. A controller was selected to evaluate the stability of the proportional valve controller. The stability evaluation was performed by comparing and analyzing the command current of the controller and the actual current measured. The command current was measured using a CAN (controller area network) communication device and DAQ (data acquisition). The actual current was measured with a current probe and an oscilloscope. The control system and stability evaluation was performed by measuring the CPU load on the controller during control operations. The average load factor was 12.27%, and when 5 tasks were applied, it was shown to be 70.65%. This figure was lower than the CPU limit of 74.34%, when 5 tasks were applied and was judged to be a stable system.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권4호
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• pp.240-248
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• 2009

Moore's law has driven silicon technology scale down aggressively, and it results in significant increase of leakage current on nano-meter scale CMOS. Especially, in mobile devices, leakage current has been one of designers' main concerns, and thus many studies have introduced low power methodologies. However, there are few studies to minimize implementation cost in the mixed use of the methodologies to the best of our knowledge. In this paper, we introduce industrial applications of low power design methodologies for the decrease of leakage current. We focus on the design cost reduction of power gating and reverse body bias when used together. Also, we present voltage scale as an alternative to reverse body bias. To sustain gate leakage current, we discuss the adoption of high-$\kappa$ metal gate, which cuts gate leakage current by a factor of 10 in 32 nm CMOS technology. A 45 nm mobile SoC is shown as the case study of the mixed use of low power methodologies.