• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• Journal of Yeungnam Medical Science
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• 제36권3호
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• pp.183-191
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• 2019

Some patients with type 1 and type 2 diabetes mellitus (DM) present with cognitive dysfunctions. The pathophysiology underlying this complication is not well understood. Type 1 DM has been associated with a decrease in the speed of information processing, psychomotor efficiency, attention, mental flexibility, and visual perception. Longitudinal epidemiological studies of type 1 DM have indicated that chronic hyperglycemia and microvascular disease, rather than repeated severe hypoglycemia, are associated with the pathogenesis of DM-related cognitive dysfunction. However, severe hypoglycemic episodes may contribute to cognitive dysfunction in high-risk patients with DM. Type 2 DM has been associated with memory deficits, decreased psychomotor speed, and reduced frontal lobe/executive function. In type 2 DM, chronic hyperglycemia, long duration of DM, presence of vascular risk factors (e.g., hypertension and obesity), and microvascular and macrovascular complications are associated with the increased risk of developing cognitive dysfunction. The pathophysiology of cognitive dysfunction in individuals with DM include the following: (1) role of hyperglycemia, (2) role of vascular disease, (3) role of hypoglycemia, and (4) role of insulin resistance and amyloid. Recently, some investigators have proposed that type 3 DM is correlated to sporadic Alzheimer's disease. The molecular and biochemical consequences of insulin and insulin-like growth factor resistance in the brain compromise neuronal survival, energy production, gene expression, plasticity, and white matter integrity. If patients claim that their performance is worsening or if they ask about the effects of DM on functioning, screening and assessment are recommended.

• BMB Reports
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• 제55권7호
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• pp.342-347
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• 2022

Defense priming allows plants to enhance their immune responses to subsequent pathogen challenges. Recent reports suggested that acquired resistances in parental generation can be inherited into descendants. Although epigenetic mechanisms are plausible tools enabling the transmission of information or phenotypic traits induced by environmental cues across generations, the mechanism for the transgenerational inheritance of defense priming in plants has yet to be elucidated. With the initial aim to elucidate an epigenetic mechanism for the defense priming in plants, we reassessed the transgenerational inheritance of plant defense, however, could not observe any evidence supporting it. By using the same dipping method with previous reports, Arabidopsis was exposed repeatedly to Pseudomonas syringae pv tomato DC3000 (Pst DC3000) during vegetative or reproductive stages. Irrespective of the developmental stages of parental plants that received pathogen infection, the descendants did not exhibit primed resistance phenotypes, defense marker gene (PR1) expression, or elevated histone acetylation within PR1 chromatin. In assays using the pressure-infiltration method for infection, we obtained the same results as above. Thus, our results suggest that the previous observations on the transgenerational inheritance of defense priming in plants should be more extensively and carefully reassessed.

• Journal of Semiconductor Engineering
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• 제3권2호
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.50-56
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• 2022

In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaO_x/AlO_x/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.

• 한국재료학회지
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• 제26권9호
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• pp.486-492
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• 2016

Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

• 한국정보과학회논문지:시스템및이론
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• 제35권1호
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• pp.18-29
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• 2008

최근 NAND 플래시 메모리는 빠른 접근속도, 저 전력 소모, 높은 내구성, 작은 부피, 가벼운 무게 등으로 차세대 대용량 저장 매체로 각광 받고 있다. 그러나 이런 플래시 메모리는 데이타를 기록하기 전에 기존의 데이타 영역이 지워져 있어야 한다는 제약이 있으며, 비대칭적인 읽기, 쓰기, 삭제 연산의 처리속도 각 블록당 최대 소거 횟수 제한과 같은 특징들을 지닌다. 위와 같은 단점을 극복하고 NAND플래시 메모리를 효율적으로 사용하기 위하여. 다양한 플래시 전환 계층 제안되어 왔다. 기러나 기존의 플래시 전환 계층들은 Hot data라 불리는 빈번히 접근되는 데이타에 의해서 잦은 겹쳐쓰기 요구가 발생되며, 이는 급격한 성능 저하를 가져 온다. 본 논문에서는 Hot data 검출기를 이용하여, 매우 적은 양의 데이타인 Hot data를 검출한 후, 검출된 Hot data는 섹터사상 기법을 적용시키고, 나머지 데이타인 Cold data는 로그 기반 블록 사상 기법을 적용시키는 적응형 플래시 전환 계층(AFTL)을 제안한다. AFTL은 불필요한 삭제, 쓰기, 읽기 연산을 최소화시켰으며, 기존의 플래시 전환 계층과의 비교 측정을 통하여 성능의 우수성을 보인다.

• 공연문화연구
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• 제43호
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• pp.229-261
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• 2021

역사적 사실을 기억하고 기념하는 방식에는 기억 주체와 당대의 권력 관계 즉 기억의 정치학이 반영된다. 본고는 2019년에 공연된 기념 뮤지컬 <신흥무관학교>, <구: 도깨비들의 노래>, <워치>를 통해 변화된 지점들을 분석하였다. 위 작품들은 만주 독립운동, 홍코우 공원의거를 배경으로 하되 기록되지 않은 것을 채우면서 독립 운동에서 기념해야 할 것들을 조정하였다. <신흥무관학교>의 경우, 공식 기록 속 인물을 배경으로 하되 이름 없는 이들을 전면에 내세워 기념 대상을 확대하였다. <구 : 도깨비들의 노래>는 타임 슬립을 통해 망각된 대상을 재현하고 사죄하면서 기억을 수정한다. <워치>는 사진, 뉴스 릴, 신문기사 등 다큐멘터리 기법을 통해 팩션의 스펙터클을 강화하였지만, 기록에 한정되는 한계도 드러난다. 3.1 운동 및 대한민국 임시정부 수립 100주년 기념 뮤지컬에서는 '민중의 움직임'이 현재와 연결되고 있음을 적극적으로 드러내는 장치들이 발견된다. 이를 위해 공식적 기록에 새로 생산된 가치와 기억을 반영하였고, 군중의 일상과 감정에 공을 쏟았다. 또한 실증적 고찰과 호명하기를 동시에 활용하여 신뢰성을 높였다. "100주년 기념"으로 호출된 뮤지컬에서는 독립운동가와 함께 움직인 군중의 일상과 감정 즉 미시문화사적 접근이 담겨 있다. 기념해야 할 목표와 목적의 이동이 나타난 것이다. 이 시도들은 동시대적 공감대 형성이란 성과를 얻었다는 점에서 의미가 있다.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.227-230
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• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• 한국세라믹학회지
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• 제46권3호
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• pp.336-343
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• 2009

Nickel oxide thin films exhibit the resistive switching as a function of applied voltages. The switching phenomena involve low and high resistance states after electroforming. The electrical features are believed to be associated with the formation and rupture of filaments. The set and reset behaviors are controlled by the oxidation and reduction of filaments. The indirect evidence of filaments is corroborated by the presence of nanocrystalline nickel oxides found in high-resolution transmission electron microscopy. The insertion of insulating layers seems to control the current-voltage characteristics by preventing the continuous formation of conductive filaments, potentially leading to artificial control of resistive behaviors in NiO-based systems.