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A Review of RRAM-based Synaptic Device to Improve Neuromorphic Systems  

Park, Geon Woo (Kyungpook National University Electronics Engineering)
Kim, Jae Gyu (Kyungpook National University Electronics Engineering)
Choi, Geon Woo (Kyungpook National University Electronics Engineering)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.3, 2022 , pp. 50-56 More about this Journal
Abstract
In order to process a vast amount of data, there is demand for a new system with higher processing speed and lower energy consumption. To prevent 'memory wall' in von Neumann architecture, RRAM, which is a neuromorphic device, has been researched. In this paper, we summarize the features of RRAM and propose the device structure for characteristic improvement. RRAM operates as a synapse device using a change of resistance. In general, the resistance characteristics of RRAM are nonlinear and random. As synapse device, linearity and uniformity improvement of RRAM is important to improve learning recognition rate because high linearity and uniformity characteristics can achieve high recognition rate. There are many method, such as TEL, barrier layer, NC, high oxidation properties, to improve linearity and uniformity. We proposed a new device structure of TiN/Al doped TaOx/AlOx/Pt that will achieve high recognition rate. Also, with simulation, we prove that the improved properties show a high learning recognition rate.
Keywords
Neuromorphic system; Memristor; synapse device; RRAM; linearity; uniformity; TEL; high oxidation prop-erties; Recognition rate;
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Times Cited By KSCI : 1  (Citation Analysis)
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