• Journal of Sensor Science and Technology
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• 제13권2호
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제25권5호
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• Proceedings of the KSME Conference
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1433-1438
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• 2007

Characteristics of a phase change type micro actuator have been studied. The micro actuator has been designed for a micro-pump in an active direct methanol fuel cell(DMFC), consisting of an actuating chamber, a membrane, an electric heater, and a sensor of resistance temperature detector (RTD). In the present study, researches have been focused on the response of the actuator to control algorithm of the heater. The experiments demonstrated that the displacement of the membrane increase with temperature variation which is a function of applied voltage, duty ratio, and operating frequency of heating. The results also showed that operation of the actuator with high voltage at small duty of heating is more efficient than the same power consumption of heating with low voltage at large duty.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 추계학술대회
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• pp.425-428
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• 2006

Recently, Direct Methanol Fuel Cell (DMFC) for portable devices has been received much attention because DMFC has a possibility of higher energy density than electrical batteries and smaller size than other fuel cells. This paper presents the fabrication and test of a thermopneumatic microactuator with a phase change for DMFC. A microactuator consists of an inlet an outlet a chamber, a heater and a sensor of resistance temperature detector(RTD). The micoractuator is fabricated by the spin-coating process, the lithograph process, the deep RIE process and so on. The total size of microactuator is $20{\times}20{\times}0.53mm^3$. When the current is applied, the heater heats liquid in chamber. As a result the liquid vaporizes. The response of temperature in the chamber was measured using thermocouple The changed temperature is $3^{\circ}C$ for 5 sec at 0.032W.

• Journal of Sensor Science and Technology
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• 제17권4호
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• pp.250-255
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• 2008

A vanadium pentoxide ($V_2O_5$)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited $V_2O_5$ thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (${-4}%/^{\circ}C$). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제49권7호
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• pp.1-9
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• 2012

In this paper, resistance temperature detector (RTD) integrated into the LED package is proposed in order to solve the temperature dependence of LED's optical properties. To measure the package temperature in real time, the RTD type temperature sensor having excellent accuracy and linearity between temperature change and resistance change was adopted. A stable metallic film is required for long term reliability and stability of the RTD type temperature sensor. Therefore, deposition and annealing condition for the film were determined. Based on the determined condition, the RTD type temperature sensor with the sensitivity of about $1.560{\Omega}/^{\circ}C$ was fabricated inside the LED package. In order to configurate the LED package system keeping the constant brightness regardless of the temperature, additional conversion circuit and control circuit boards were fabricated and added to the fabricated LED package. The proposed system was designed to compensate the light intensity caused by temperature change using the variable duty rate of driving current. As a result, the duty rate of PWM signal which is the output signal of the configurated system was changed with the temperature change, and the duty rate was similarly varied with the target duty rate. Consequently, it was focused the fabricated RTD can be used for compensating the optical properties of LED and the LED package which exhibits constant brightness regardless of the temperature change.

• Journal of The Korean Astronomical Society
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• 제45권1호
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• pp.19-24
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• 2012

Microthermal fluctuations are introduced by atmospheric turbulence very near the ground. In order to detect microthermal fluctuations at Fuxian Solar Observatory (FSO), a microthermal instrument has been developed. The microthermal instrument consists of a microthermal sensor, which is based on a Wheatstone bridge circuit and uses fine tungsten filaments as resistance temperature detectors, an associated signal processing unit, and a data collection, & communication subsystem. In this paper, after a brief introduction to surface layer seeing, we discuss the instrumentation behind the microthermal detector we have developed and then present the results obtained. The results of the evaluation indicate that the effect of the turbulent surface boundary layer to astronomical seeing would become sufficiently small when installing a telescope at a height of 16m or higher from the ground at FSO.

• Proceedings of the KIEE Conference
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1909-1911
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• 2000

Recently many research activities on the diagnosis of stator winding insulation of large rotating machines have been reported. Capacitive couplers are widely used as sensors for on-line partial discharge (PD) measurement of high voltage rotating machines. This paper presents laboratory test to compare Stator Slot Coupler (SSC), Resistance Temperature Detector (RTD), 80 [pF] coupler and 500 [pF] coupler for on-line PD measurement of rotating machines.

• Proceedings of the KIEE Conference
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1921-1923
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• 2001

In this work, an array of resistance temperature detector(RTD) was fabricated inside the microchannel in order to investigate in-situ flow characteristics. A rectangular straight microchannel, integrated with RTD's for temperature sensing and a heat source for generating the temperature gradient along the channel. were fabricated with the dimension of $200{\mu}m(W){\times}{\mu}m(D){\times}$48mm(L), while RTD measured precise temperatures at the inside-channel wall. 4" $525{\pm}25{\mu}m$ thick P-type <100> Si wafer was used as a substrate. For the fabrication of RTDs. 5300$\AA$ thick Pt/Ti layer was sputtered on a Pyrex glass wafer. Finally, glass wafer was bonded with Si wafer by anodic bonding, therefore RTD was located inside the microchannel. The temperature distribution inside the fabricated microchannel was obtained from 4 point probe measurements and Dl water is used as a working fluid. Temperature distribution inside the microchannel was measured as a function of mass flow rate and heat flux. As a result, precise temperatures inside the microchannel could be obtained. In conclusion, this novel temperature distribution measurement system will be very useful to the accurate analysis of the flow characteristics in the microchannel.

• Journal of Sensor Science and Technology
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• 제18권4호
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• pp.301-306
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• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.