• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.539-545
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• 2013

In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of $TiO_2$ unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.218-219
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• 2008

In this paper, we have investigated the phase change memory device with cell structure using three-dimensional finite element analysis tool for reducing reset current. From the simulation, the reset current of PRAM with $SiO_2$ inserting layer is greatly reduced, compared with the conventional device.

• 한국군사과학기술학회지
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• 제9권4호
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• pp.71-80
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• 2006

Strapdown Inertial navigation systems consist of an inertial sensor assembly(ISA), electronic modules to process sensor data, and a navigation computer to calculate attitude, velocity and position. In the ISA, most gryoscopes such as RLGs and FOGs, have digital output, but typical accelerometers use current as an analog output. For a high precision inertial navigation system, sufficient stability and resolution of the accelerometer board converting the analog accelerometer output into digital data needs to be guaranteed. To achieve this precision, the asymmetric error and A/D reset scale error of the accelerometer board must be properly compensated. If the relation between the acceleration error and the errors of boards are exactly known, the compensation and estimation techniques for the errors may be well developed. However, the A/D Reset scale error consists of a pulse-train type term with a period inversely proportional to an input acceleration additional to a proportional term, which makes it difficult to estimate. In this paper, the effects on the acceleration output for auto-pilot situations and the effects of A/D reset scale errors during horizontal alignment are qualitatively analyzed. The result can be applied to the development of the real-time compensation technique for A/D reset scale error and the derivation of the design parameters for accelerometer board.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.685-688
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• 2005

플라즈마 디스플레이를 위한 효율적인 서스테인 드라이버와 이를 리셋 회로와 결합시키는 유용한 결합 방법을 제시한다. 제안된 서스테인 드라이버는 외부 인덕터와 패널에 존재하는 기생 커페시터 간의 직렬공진 방식을 이용한다. 이 회로는 4개의 스위칭 소자, 인덕터, 전원공급을 목적으로 하는 외부 커패시터로 구성된다. 기존의 방식과 비교하여 입력전원전압이 두배가 되지만 스위칭 소자에 가해지는 전압스트레스는 기존의 값과 거의 동일하며, 입력 전압을 별도의 승압없이 리셋 회로의 전원으로 사용할 수 있는 장점을 가진다. 이러한 회로적 구조는 서스테인 드라이버와 리셋회로를 간단히 구성할 수 있다. 이론적 분석을 바탕으로 동작원리와 설계 예를 제시하며, 7.5인치 AC PDP 패널을 이용한 실험을 통해 타당성을 검증한다.

• 방사선산업학회지
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• 제9권1호
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.348-350
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• 1996

A new reset winding clamped forward converter with transformer voltage feedback technique for power factor correction with a single-switch/single-stage is proposed. The proposed converter gives the good power factor correction, low current harmonic distortions, and tight output voltage regulation. The prototype shows the IEC555-2 requirements are met satisfactorily with nearly unity power factor.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.400-402
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• 2008

A new interleaved forward converter, adopting series-input parallel-output structure with a common transformer reset circuit, is proposed in this paper. Series-input structure distributes the voltage stress on switches, which makes it suitable for high input voltage application. Paralleling output stage with an interleaving technique enables the circuit handle large output current and reduces filter size. In addition, since two forward converters share one active-clamp circuit for the transformer reset, its primary structure is simplified. All these features make the proposed converter promising for high input voltage applications with high efficiency and simple structure.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.94-97
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• 2007

The desin and implementation of a CMOS analog integrated circuit that provides dual-mode modulations, PWM for active clamp reset converter and PFM for LLC resonant converter, is described. The proposed controller is capable of implementing programmable soft start and current-mode control with compensating ramp for PWM and frequency shifting soft start for PFM. Also it provides delay time for both modes. PWM mode is implemented by active clamp reset converter and PFM mode is implemented by LLC resonant convereter, respectively. The chip is fabricated using the 0.6um high voltage CMOS process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 A
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• pp.6-8
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• 1999

This paper presents a method to analyze a forward converter. A transformer is coupled with the forward converter electric circuit and then the finite element analysis considering a hysteresis phenomenon of magnetic core is carried out when the primary or the reset winding conducts current. The analytical method is used to reduce the computation time when the reset winding circuit of the transformer turns off. As a result, the simulation results show a good agreement with experimental ones.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.