• 제목/요약/키워드: Research laboratory

검색결과 16,299건 처리시간 0.047초

40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth

  • Kwon, Yong-Hwan;Choe, Joong-Seon;Sim, Jae-Sik;Kim, Sung-Bock;Yun, Ho-Gyeong;Choi, Kwang-Seong;Choi, Byung-Seok;Nam, Eun-Soo
    • ETRI Journal
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    • 제31권6호
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    • pp.765-769
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    • 2009
  • In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm.

Novel Bumping Material for Solder-on-Pad Technology

  • Choi, Kwang-Seong;Chu, Sun-Woo;Lee, Jong-Jin;Sung, Ki-Jun;Bae, Hyun-Cheol;Lim, Byeong-Ok;Moon, Jong-Tae;Eom, Yong-Sung
    • ETRI Journal
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    • 제33권4호
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    • pp.637-640
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    • 2011
  • A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder-on-pad technology of the fine-pitch flip-chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 ${\mu}m$ in one direction.

A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers

  • Kim, Seong-Do;Choi, Jang-Hong;Lee, Joo-Hyun;Koo, Bon-Tae;Kim, Cheon-Soo;Eum, Nak-Woong;Yu, Hyun-Kyu;Jung, Hee-Bum
    • ETRI Journal
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    • 제33권6호
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    • pp.969-972
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    • 2011
  • This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-${\mu}m$ CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply.

Preliminary Works of Contact via Formation of LCD Backplanes Using Silver Printing

  • Yang, Yong Suk;You, In-Kyu;Han, Hyun;Koo, Jae Bon;Lim, Sang Chul;Jung, Soon-Won;Na, Bock Soon;Kim, Hye-Min;Kim, Minseok;Moon, Seok-Hwan
    • ETRI Journal
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    • 제35권4호
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    • pp.571-577
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    • 2013
  • The fabrication of a thin-film transistor backplane and a liquid-crystal display using printing processes can eliminate the need for photolithography and offers the potential to reduce the manufacturing costs. In this study, we prepare contact via structures through a poly(methyl methacrylate) polymer insulator layer using inkjet printing. When droplets of silver ink composed of a polymer solvent are placed onto the polymer insulator and annealed at high temperatures, the silver ink penetrates the interior of the polymer and generates conducting paths between the top and bottom metal lines through the partial dissolution and swelling of the polymer. The electrical property of various contact via-hole interconnections is investigated using a semiconductor characterization system.

Influence of surface geometrical structures on the secondary electron emission coefficient $({\gamma})$ of MgO protective layer

  • Park, W.B.;Lim, J.Y.;Oh, J.S.;Jeong, H.S.;Jeong, J.C.;Kim, S.B.;Cho, I.R.;Cho, J.W.;Kang, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.806-809
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    • 2003
  • Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

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A flexible OTFT-OLED display using solution-processed organic dielectrics

  • Hirai, Nobukazu;Katsuhara, Mao;Yagi, Iwao;Yasuda, Ryoichi;Ushikura, Shin-Ich;Noda, Makoto;Moriwaki, Toshiki;Imaoka, Ayaka;Yoneya, Nobuhide;Yumoto, Akira;Nomoto, Kazumasa;Urabe, Tetsuo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.131-134
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    • 2009
  • We have developed a flexible OTFT backplane in which all the dielectrics are formed by solutionprocess in order to achieve low-cost and highthroughput manufacturing. The backplane successfully drives a flexible AM-OLED display with peak brightness of > 200 nit and the contrast ratio of > 1000:1 with great mechanical flexibility.

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Constituents from Actinodaphne Iancifolia

  • Kim, M.R.;Ahn, K.S.;Oh, S.R.;Kim, C.S.;Lee, H.K.
    • 대한약학회:학술대회논문집
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    • 대한약학회 2001년도 Proceedings of the Pharmaceutical Society of Korea
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    • pp.200.2-200.2
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    • 2001
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