• Journal of the Korean Society of Safety
• /
• v.9 no.1
• /
• pp.161-164
• /
• 1994

Computer aided unloading elastic compliance method was employed to measure the closure and the length of short cracks. The most significant factor that influences the fatigue growth behavior of short cracks is the crack closure Phenomenon. dc/dN-$\Delta$ $K_{eff}$ relationships of short cracks are found to coincide well with the corresponding long crack relationships. Non-propagating behavior of short cracks at notch root can be predicted from the crack opening SIF of short cracks, $K_{op}$ , and the growth equation of long cracks in Region I and II.n Region I and II.I.

• Journal of applied mathematics & informatics
• /
• v.41 no.2
• /
• pp.363-372
• /
• 2023

We consider Kuo problem of hydrodynamic stability which deals with incompressible, inviscid, parallel shear flows in the 𝛽-plane. For this problem, we derived instability region without any approximations and which intersects with Howard semi-circle region under certain condition. Also, we derived upper bound for growth rate and amplification factor of an unstable mode and proved Howard's conjecture.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.12 no.4
• /
• pp.781-789
• /
• 1988

The fatigue crack growth and crack closure behavior of long through-thickness cracks and small half-penny shaped surface cracks were investigated in 5083-H113 Aluminum alloy under constant amplitude testing by the unloading elastic compliance method. It was found that, in the Region II, the crack growth behavior of both through-thickness and surface cracks exhibited the tri-linear form with two transitions and no concern with stress ratio R. In the Region I $I_{ab}$ and I $I_{b}$, through-thickness cracks grew faster than surface cracks in length direction, but at .DELTA. K .leq.4 MPa.root.m for R=0.1 the growth rates of surface cracks in depth direction, grew faster than those of through-thickness cracks. When the crack closure was considered, the growth rates of through-thickness cracks lay between the growth rates of depth direction and the growth rates of length direction in surface cracks. It is suspected that this was caused by the difference of crack closure at depth and length direction of surface cracks.s.

• Journal of Forest and Environmental Science
• /
• v.31 no.1
• /
• pp.47-54
• /
• 2015

The study was performed to analyze the growth of the red pine (Pinus densiflora) in the Eastern Region of Korea. Stem profile data from a total of 8 dominant trees of which each tree represents its site were collected and used for the analysis. The stem volumes were calculated using Smalian's formula and much higher than the ones by Korea Forest Research Institute in larger than dbh 40 cm. The total bark volumes were more proportionally related to dbh and stem volume than to height and age. The bark thickness and volume decreased as relative height increases but increased as relative dbh increased. The average PAI of dbh and height reached the highest at 0.8 cm/yr (age 15) and at 0.45 m/yr (age 30) respectively, while the average PAI of volume steadily tended to increase up to age 80. The growth percentages of dbh, height and volume tended to decrease with age and volume growth percentage was higher than dbh and height.

• Journal of the Korean institute of surface engineering
• /
• v.24 no.3
• /
• pp.137-143
• /
• 1991

The relation between the ion irradiation induced grain growth and the basic parameters sinvolved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with nuclear energy deposition and thermodynamic properties such as cohesive energy ( Hc) and heat of mixing ( Hm). A model for the grain growth based on the thermal spike induced atomic migration was developed and applied to interpret experimental results.

• Journal of the Korean Ceramic Society
• /
• v.27 no.6
• /
• pp.783-789
• /
• 1990

Shaped crystal growth apparatus were made for sapphire ribbon single crystal growth. Sapphire ribbon single crystal are grown by EFG(Edge-defined Film-fed Growth) methdo for use as watch-glass and SOS(Silicon-On-Sapphire) devices. Sapphire ribbon crystals were grown to be 40min wide, 1.8mm thick, 96mm long. Therelationshiops between growth striation and surface roughness, with various growth rates, were investigated and compared. It was found that sapphire ribbon crystal is suitable for watch-glass by measuring the transmittance in the visible light region.

• Journal of Korean Society of Forest Science
• /
• v.106 no.1
• /
• pp.77-86
• /
• 2017

This study was conducted to analyze the relationship among climatic factors and radial growth of Pinus densiflora and Larix kaempferi in South Korea. To determine the climate-growth relationship, cluster analysis was applied to group surveyed regions by the climatical similarity, and a dendroclimatological model was developed to predict radial growth for each climate group under the RCP 4.5 and RCP 8.5 scenarios for greenhouse gases. The cluster analysis showed four climatic clusters (Cluster 1~4) from 10 regions for P. densiflora and L. kaempferi. The dendroclimatological model was developed through climatic variables and standardized residual chronology for each climatic cluster of P. densiflora and L. kaempferi. Four climatic variables were used in the models for P. densiflora ($R^2$ values between 0.38 to 0.58). Two to five climatic variables were used in the models for L. kaempferi ($R^2$ values between 0.31 to 0.43). The growth simulations with two RCP climate-change scenarios(RCP 4.5 and RCP 8.5) were used for growth prediction. The radial growth of the Cluster 4 of P. densiflora, the mountainous region at high elevation, tend to increase, while those of cluster 2 and 3 of P. densiflora, the region of the hightest average temperature, tends to decrease. The radial growth of the Cluster 1 of L. kaempferi the region of the lowest minimum temperature, while that of Cluster 2, the region of the highest average temperature, tends to decrease. The radial growth of Cluster 3 of L. kaempferi, the region in the east coast and Cluster 4, the region at high elevation, tends to hold steady. The results of this study are expected to provide valuable information necessary for predicting changes in radial growth of Pinus densiflora and Larix kaempferi caused by climate change.

• The korean journal of orthodontics
• /
• v.3 no.1
• /
• pp.14-20
• /
• 1972

It is well known fact that physical growth and development of children are influenced by many factors. The importance of socio-economic, geographic and cultural background cannot be over-emphasized in the evaluation of general pattern of physical growth and development of children. In this study the author measured and studied the body height and body weight of children living in the region of mine and industry located in Young-Wol Kun, Kang-Won Do, for the purpose of exploring out the influence of socio-geographic factors to act on physical growth and development of children. Total number of samples were 4,147 comprising 2,170 in male and 1,977 in female with ages ranging from 7 to 15. 1) The growth curves showed that young males grow slowly by 14 years of age, here-after rapidly and the young females grow slowly by 12 years of age, rapidly by 13 years of age and slowly thereafter. 2) The annual increment curves of body height and body weight showed that the most increment of female occurs by 13 years of age and that of mate, by 15 years of age. 3) The growth curves of the male and female crossed twice. It shows the difference of the pattern of growth between the both sexes. 4) The standards for the children in this region were presented. 5) The time of changes of stndard deviation curves of body height and body wegiht coincided nearly with that of annual increment. 6) Body weight and body height .of the children is larger than that of Korean children before World War II, but smaller than that of standards of recent Korean.

• Journal of agriculture & life science
• /
• v.43 no.4
• /
• pp.9-14
• /
• 2009

The purpose of this study was to estimate height growth pattern and to derive site index equation for Pinus densiflora grown at Mt. Osu region, Chungnam. A total of 21 repre - sentative trees from the established temporary plots around Boryeng and Cheongyang regions were destructively sampled to measure diameter, height, volume growth per 1-year interval by using of DTRS- 2000 measurement instrument. The Schnute growth function was select ed for height growth prediction using 181 height-age paired observations and derived anamorphic base age invariant site index curves (base index age 30 years). The fitted index and the asymptotic value of Schnute model indicated both 0.96 and 10.8 meter, respectively. The results suggested in this study could be very useful to understand the height growth pattern and productivity of the site quality on Pinus densiflora grown at Mt. Osu region, Chungnam.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.2
• /
• pp.135-140
• /
• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.