• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.746-751
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• 1998

There are several methods capable of determining he magnitude of optical anisotropy, such as spectrometric ellipsometry and polarized light reflectometry. The interference method is estimated to be no influence of surface scattering. The magnitude of anisotropy is a-As/sub 40/Ge/sub 10/S/sub 35/Se/sub 15/ thin film is analyzed by the reflection interference analysis method based on the difference depending on a phase of s- and p-polarized light. The theoretically analyzed value is compared with the result obtained by the measured technique.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.259-265
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• 1995

Antireflection coatings on optical lenses commertially available in domestic market are optically analyzed. Transmission spectra and reflection spectra are collected using spectrophotometers. The apparent absorption spectra around the absorption band edge are dominated by the substrate absorption. The reflection spectra and the apparent absorption spectra at visible region between 400nm and 700nm show very strong correlation to each other except a couple samples. The discrepency observed in the latters are due to an increased absorption in visible region by the substrate, which is negative effect of these samples. An antireflection coating consisted of $SiO_2/TiO_2/SiO_2/ZrO_2/Cr$ is made on c-Si substrate for spectroscopic ellispometry analysis. A film-by-film coating is accomplished and between each film deposition, ex-situ spectroscopic ellipsometry measurements are made. The analysis of the spectroscopic ellipsometry data reveals that the average film densities of $ZrO_2$ and $TiO_2$ reach only 80% of their respective packing densities and thick films are inhomogeneous along film growth direction. Discussions are made toward in-situ, real-time monitoring of the film growth so that a real-time feedback is possible to achieve a post-correction to minor deviations occured in the previous step. step.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.271-278
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• 2013

The effective reflection coefficients of an obliquely incident wave on a multi-layered substrate coated with a uniaxially anisotropic alignment layer are derived. The effective reflection coefficients as well as explicit ellipsometric expressions are provided as a function of film constants of multiple layers together with magnitude of anisotropy, direction of optic axis, and thickness of the alignment layer. It is expected that by adapting these expressions to the conventional modelling technique, the ordinary refractive index, the extra-ordinary refractive index, the azimuth angle and the tilt angle of the optic axis, and the thickness of the aligned surface can be determined simultaneously together with the thickness and volume fraction of each layer beneath the alignment layer.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.115-120
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• 2015

Explicit expressions are derived for the effective reflection coefficients of obliquely incident light on a multilayered substrate coated with two uniaxially anisotropic films. Based on these reflection coefficients, ellipsometric constants are obtained as function of the tilt and azimuthal angles of the optical axes of the uniaxial films. Explicit expressions are provided, which can be used to separate the effects of surface anisotropy for anisotropic film from that of its bulk anisotropy, so that these expressions may be utilized in characterizing the surface anisotropy of alignment layers.

• Korean Journal of Optics and Photonics
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• v.26 no.4
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• pp.195-202
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• 2015

We developed a reflection ellipsometer so that one can measure the extremely small optical anisotropy of a rubbed polyimide alignment layer, without being disturbed by the residual anisotropy of the substrate. The optical anisotropy of the alignment layer was measured as rubbing strength was increased, and the measured anisotropy was compared to the retardation obtained by using a transmission-type ellipsometer, to confirm the reliability of our reflection ellipsometer. With this measured anisotropy we could verify the formation of an alignment layer by rubbing, and could quantitatively evaluate the formation of the alignment layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.1
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• pp.216-221
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• 2017

Reducing optical reflection in the visible light range, in order to increase the share of transmitted light and avoid the formation of ghost images in imaging, is important for polymer lens applications. In this study, polymer lenses with refractive indices of n=1.56, 1.60, and 1.67 were fabricated by the injection-molding method with a polymer lens monomer, dibutyltin dichloride as the catalyst and an alkyl phosphoric ester as the release agent. To investigate their anti-reflection (AR) effects, various AR coating structures, viz. a multi-layer AR coating structure, tri-layer AR coating structure with a discrete approximation Gaussian gradient-index profile, and tri-layer AR coating structure with a quarter-wavelength approximation, were designed and coated on the polymer lens by an E-beam evaporation system. The optical properties of the polymer lenses were characterized by UV-visible spectrometry. The material properties of the thin films, refractive index and surface roughness, were analyzed by ellipsometry and AFM, respectively. The most effective AR coating structure of the polymer lens with low refractive index, n=1.56, was the both side coating of multi-layer AR coating structure. However, both side coating of the tri-layered discrete approximation Gaussian gradient-index profile AR coating structure gave comparable results to the both side coating of the multi-layer AR coating structure for the polymer lens with a high refractive index of n=1.67.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1737-1739
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• 2004

Diamond-like carbon (DLC) films were prepared with RF-PECVD (Plasma Enhanced Chemical Vapor Deposition) method on coming glass and silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gases. We examined the effects of $CH_4$ to $H_2$ ratios on tribological and optical properties of the DLC films. The structure and surface morphology of the films were examined using Raman spectroscopy and atomic force microscopy (AFM). The hardness of the DLC film was measured with nano-indentor. The optical properties of DLC thin film were investigated by UV/VIS spectrometer and ellipsometry. And also, solar cells were fabricated using DLC as antireflection coating before and after coating DLC on silicon substrate and compared the efficiency.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.23-29
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• 2019

A copper tetracumylphenoxy phthalocyanine (CuPccp) thin film was formed on an organic insulator film by Langmuir-Blodgett (LB) deposition for gas sensor fabrication. To increase the reproducibility of film transfer, stearyl alcohol was used as a transfer promoter. The structural properties of the CuPccp layers were optically monitored through attenuated total reflection and polarization-modulated ellipsometry techniques. The average thickness of a single layer of the CuPccp LB film was measured to be 2.5 nm. Despite the role of the transfer promoter, the stability of the layer transfer was not sufficient to ensure homogeneity of the LB film. This was probably due to the presence of aggregates in the molecular structure of the CuPccp LB film. Nevertheless, copper phthalocyanine polymorphism can be greatly suppressed by the LB arrangement, which appears to contribute to the improvement of electrical conductivity. The p-type semiconductor characteristics were confirmed by Hall measurements from the CuPccp LB films.