• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.545-548
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• 1998

Thin film SOI(Silicon-On-Insulator) devices exhibit floating body effect. In this paper, SOI NMOSFET is proposed to solve this problem. Some part of gate oxide was considered to be 30nm~80nm thicker than the other normal gate oxide and simulated with TSUPREM-4. The I-V characteristics were simulated with 2D MEDICI mesh. Since part of gate oxide has different oxide thickness in proposed device, the gate electric field strength is not the same throught the gate and consequently the reduction of current kink effect is occurred.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.16-21
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• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.66-68
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• 2003

In a motor drive, the current rating is directly related to the rating of a switching device, and the parallel switching operation for a cost reduction is the alternatives because it has the smaller current rating through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. This paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. The proposed strategy is verified by theoretical and experimental verification.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2002.10a
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• pp.137-140
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• 2002

The monitoring system for integrated management of on-site wastewater treatment plants(biofilter) was designed and its operation program was developed. In design process, the research on monitoring parameters which will be able to represent condition and operation of the pilot plants was accomplished, and these parameters came to reveal with ORP(Oxidation-Reduction Potential), water level, pump and power on/off. Proposed monitoring system is composed with measurement, control, communication and display device, and PCB(Prototype Circuit Boards) and microcontroller (PIC16F877) technique are applied to its design of control device for performing specific function. also, The operation program of PC setup is developed in order to provide a convenience to the manager.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.918-921
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• 2004

In a motor drive, the current rating is directly related to the rating of a switching device, and the parallel switching operation for a cost reduction is the alternatives because it has the smaller current rating through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. This paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. The proposed strategy is verified by theoretical and experimental results.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.6
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• pp.424-429
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• 1987

It has been observed that the reduction rate of the inversion layer carrier mobility due to the increase of the longitudinal electric field(drain to source direction) decreases as the transverse electric field increases. The effects of this physicar phenomenon to the I-V characteristics of the short channel NMOSFET are studied. It is shown that these effects increase the drain Current in the saturatio region, which agrees with the genarally observed decrepancy between the experimental I-V charateristics and the I-V modeling which dose not include this physical phenomenon. Also it is shown that this effect becomes more important when the device channel length decreases and the device operates in the high electric field range.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.117-122
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• 2013

The distributed power conversion LED driver circuit using parasitic inductance is proposed in this paper. while the conventional LED driver circuit is composed of the large size devices and heatsinks, the proposed circuit can be realized with the small sized no heatsink based. since the processing power can be effectively distributed. Also by using the wire parasitic inductance of the LED string, the proposed circuit can be implemented without external magnetic device. As a result, the proposed circuit which features the small size and volume con be realized even without LED driver module(LDM) board. since, all the device can be attached to the existing LED array Module(LAM) board. Therefore, it features that cost savings and volume reduction of circuit. To confirm the validity of the proposed circuit, theoretical analysis and experimental results from a distributed power conversion LED driver circuit prototype are presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1692-1696
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• 2006

Dopant and host molecules for charge transport layer in OLED have been developed. They enable implementation of the PIN OLED technology in mass production. We review the status of PIN OLED with main focus on top-emission structures and operation stability at elevated temperatures. A green phosphorescent top-emission device with 2.5 V operating voltage and 90 lm/W at 1000 $cd/m^2$ is presented. For a red top-emission device, lifetime exceeding 100,000 h at 500 $cd/m^2$ initial brightness is reported. Operational stability at $80^{\circ}C$ has been investigated. A lifetime of 17,000 h at 500 $cd/m^2$ has been achieved. Finally, we comment on further reduction of the operating voltage in OLED.

• ETRI Journal
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• v.34 no.4
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• pp.553-563
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• 2012

Serial peripheral interface (SPI) has been identified as a bottleneck in many wireless sensing systems today. SPI is used almost universally as the physical connection between the microcontroller unit (MCU) and radios, storage devices, and many types of sensors. Virtually all wireless sensor nodes today perform up to twice as many bus transactions as necessary to transfer a given piece of data, as an MCU must serve as the bus master in all transactions. To eliminate this bottleneck, we propose the master-handoff protocol. After the MCU initiates reading from the source slave device and writing to the sink slave device, the MCU as a master becomes a slave, and either the source or the sink slave becomes the temporary master. Experiment results show that this master-handoff technique not only cuts the data transfer time in half, but, more importantly, also enables a superlinear energy reduction.