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http://dx.doi.org/10.5573/JSTS.2015.15.1.016

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET  

Lee, Jung-Yeon (School of Electrical and Electronic Engineering, Hongik University)
Park, Bong-Ryeol (School of Electrical and Electronic Engineering, Hongik University)
Lee, Jae-Gil (School of Electrical and Electronic Engineering, Hongik University)
Lim, Jongtae (School of Electrical and Electronic Engineering, Hongik University)
Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.15, no.1, 2015 , pp. 16-21 More about this Journal
Abstract
In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.
Keywords
AlGaN/GaN heterostructure; forming gas annealing; interface trap density; MOSHFET; post metallization annealing;
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Times Cited By KSCI : 1  (Citation Analysis)
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