• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3335-3339
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• 2013

Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons ($D^{\circ}X$), and the first LO phonon replicas of $D^{\circ}X$, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ~70 meV, while that of DAP was about ~38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

• Journal of The Korean Astronomical Society
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• v.37 no.5
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• pp.579-581
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• 2004

Recently, claims have been made of the detection of 'warm-hot' gas in the intergalactic medium. Kaastra et al. (2003) claimed detection of ${\~} 10^6$ K material in the Coma Cluster but studies by Arnaud et al. (2001), and our analysis of the Chandra observations of Coma (Vikhlinin et al. 2001), find no evidence for a $10^6$ K gas in the cluster. Finoguenov et al. (2003) claimed the detection of $3 {\times} 10^6$ gas slightly off-center from the Coma Cluster. However, our analysis of ROSAT data from this region shows no excess in this region. We propose an alternative explanation which resolves all these conflicting reports. A number of studies (e.g. Robertson et al., 2001) have shown that the local interstellar medium undergoes charge exchange with the solar wind. The resulting recombination spectrum shows lines of O VII and O VIII (Wargelin et al. 2004). Robertson & Cravens (2003) have .shown that as much as $25\%$ of the Galactic polar flux is heliospheric recombination radiation and that this component is highly variable. Sporadic heliospheric emission could account for all the claims of detections of 'warm-hot' gas and explain the conflicts cited above.

• Journal of Information Display
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• v.7 no.2
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• pp.26-30
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• 2006

Insertion of a thin lithium fluoride (TLF) layer between an emitting layer (EML) and an electron transporting layer has resumed in the developement of a highly efficient and bright organic light-emitting diode (OLED). Comparing with the performance of the device as a function of position with the TLF layer in tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$, we propose the optimal position for the TLF layer in the stacked structure. The fabricated OLED shows a luminance efficiency of more than 20 cd/A, a power efficiency of 12 Im/W (at 20 mA/$cm^{2}$), and a luminance of more than 22 000 cd/$m^{2}$ (at 100 mA/$cm^{2}$), respectively. We suggest that the enhanced performance of the OLED is probably attributed to the improvement of carrier balance to achieve a high level of recombination efficiency in an EML.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.73-77
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• 2021

Inorganic-organic hybrid perovskite solar cells have demonstrated considerable improvements, reaching 25.5% of certified power conversion efficiency in 2020 from 3.8% in 2009. In normal structured perovskite solar cells, TiO2 electron-transporting materials require heat treatment process at a high temperature over 450℃ to induce crystallinity. Inverted perovskite solar cells have also been studied to exclude the additional thermal process by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a non-oxide electron-transporting layer. However, the drawback of the PCBM layer is a charge accumulation at the interface between PCBM and a metal electrode. The impact of bathocuproin (BCP) buffer layer on photovoltaic performance has been investigated herein to solve the problem of PCBM. 2-mM BCP-modified perovskite solar cells were observed to exhibit a maximum efficiency of 12.03% compared with BCP-free counterparts (5.82%) due to the suppression of the charge accumulation at the PCBM-Au interface and the resulting reduction of the charge recombination between perovskite and the PCBM layer.

• Journal of the Korean Chemical Society
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• v.41 no.7
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• pp.329-336
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• 1997

Photoacoustic spectroscopy was utilized to investigate the carrier transport and the thermal diffusivity in GaAs and Si. From the frequency dependence of the photoacoustic signal, it is found that heat source was originated from the instantaneous thermalization process in low frequency region. In high frequency region, however, the heat was generated by the nonradiative bulk recombination and the nonradiative surface recombination processes. It was also shown that the photoacoustic effects in GaAs of a direct band gap were governed by all three processes and those in Si of an indirect band gap were produced by the instantaneous thermalization and the nonradiative bulk recombination only. The phase of the photoacoustic signal showed a minimum value in GaAs. In Si, the phase of the photoacoustic signal was monotonically decreased as the modulation frequency was increased, demonstrating the above-mentioned mechanisms of the generation of heat. By measuring the photoacoustic signal, thermal diffusivities of semiconductors were determined to be ∼0.35 ㎠/s for GaAs and ∼1.24 ㎠/s for Si. In addition, the similar values of thermal diffusivities were obtained from the curve fitting of photoacoustic phase spectra.

• Journal of Microbiology and Biotechnology
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• v.22 no.5
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• pp.575-584
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• 2012

Listeria monocytogenes is an important foodborne pathogen that comprises four genetic lineages: I, II, III, and IV. Of these, lineage II is frequently recovered from foods and environments and responsible for the increasing incidence of human listeriosis. In this study, the phylogenetic structure of lineage II was determined through sequencing analysis of the ascB-dapE internalin cluster. Fifteen sequence types proposed by multilocus sequence typing based on nine housekeeping genes were grouped into three distinct sublineages, IIA, IIB, and IIC. Organization of the ascB-dapE internalin cluster could serve as a molecular marker for these sublineages, with inlGHE, inlGC2DE, and inlC2DE for IIA, IIB, and IIC, respectively. These sublineages displayed specific genetic and phenotypic characteristics. IIA and IIC showed a higher frequency of recombination (${\rho}/{\theta}$). However, recombination events had greater effect (r/m) on IIB, leading to its high nucleotide diversity. Moreover, IIA and IIB harbored a wider range of internalin and stress-response genes, and possessed higher nisin tolerance, whereas IIC contained the largest portion of low-virulent strains owing to premature stop codons in inlA. The results of this study indicate that IIA, IIB, and IIC might occupy different ecological niches, and IIB might have a better adaptation to a broad range of environmental niches.

• Journal of Plant Biotechnology
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• v.33 no.3
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• pp.185-194
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• 2006

Chloroplasts are believed to be descended from certain cyanobacteria, which were taken up by phagocytosis into a host cell and lived there in a symbiotic relationship. In contrast to the current static concept on the chloroplast genome, its dynamism has been recently demonstrated: the chloroplast genome is active in intramolecular homolgous recombination, producing subgenomic circles when it obtains homolgous sequences via genetic transformation. Chloroplast tranformation in higher plants provides many advantages over nuclear transformation that include higher expression levels of transgenes, polycistronic expression of transgenes, and maternal transmission of transgenes. Tobacco has been used as a model for chloroplast genetic transformation. However, it is recently possible to transform the chloroplasts of other major food and economic crops including rice, soybean, and cotton. Chloroplast-transformed crops will be able to replace bioreactors using microorganisms for production of value-added proteins in future.

• Journal of The Korean Astronomical Society
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• v.13 no.1
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• pp.35-44
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• 1980

Various assumptions used in interpreting the observations of hydrogen recombination lines are critically assessed to confirm the gradient of electron temperature with distance from the galactic center. The total temperature increase from 5 to 13 kpc is about 2,500 K. Among many suggestions, we have singled out the decrease of trace dement abundances with the galactoccntric distance as the most viable cause for the temperature gradient. This will impose an important constraint on evolutionary models of the Galaxy.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.69-72
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• 2014

We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.