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http://dx.doi.org/10.5012/bkcs.2013.34.11.3335

Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods  

Kim, Soaram (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Park, Hyunggil (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Nam, Giwoong (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Yoon, Hyunsik (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Kim, Jong Su (Department of Physics, Yeungnam University)
Kim, Jin Soo (Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University)
Son, Jeong-Sik (Department of Visual Optics, Kyungwoon University)
Lee, Sang-Heon (School of Chemical Engineering, Yeungnam University)
Leem, Jae-Young (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Publication Information
Bulletin of the Korean Chemical Society / v.34, no.11, 2013 , pp. 3335-3339 More about this Journal
Abstract
Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons ($D^{\circ}X$), and the first LO phonon replicas of $D^{\circ}X$, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ~70 meV, while that of DAP was about ~38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.
Keywords
Zinc oxide; B-doped; Hydrothermal; Nanorods; Photoluminescence;
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