• Journal of Energy Engineering
• /
• v.12 no.2
• /
• pp.154-163
• /
• 2003

Grid connection essentially requires a wind energy conversion system (WECS) to not only supply adequate power responding to constantly varying wind speed but also provide a specified level of voltage magnitude and frequency that is acceptable in the electric power network. To satisfy such requirements, appropriate control schemes of a wind turbine to be connected to the power grid should be employed. This paper presents an output control strategy of a grid-connected wind power generation, which consists of a fixed-pitch wind turbine, a synchronous generator and a AC-DC-AC component with a voltage source inverter built in, and performs modelling and analysis of the strategy using PSCAD/EMTDC, an electromagnetic transient analysis software. Real power output control of the voltage source inverter is implemented to extract the maximum energy from wind speed inputted through wind blades and reactive power control, to keep the terminal voltage of WECS at a specific level. SPWM switching method is used to reduce the harmonics and maintain 60 ㎐ of the output frequency. The wind turbine performance and output corresponding to wind variation and the terminal load change is simulated and analysed.

• Korean Journal of Materials Research
• /
• v.17 no.12
• /
• pp.642-647
• /
• 2007

We investigated dry etching of acrylic (PMMA) in $O_2/N_2$ plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % $O_2$ composition in the $N_2/O_2$ plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% $O_2$ in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about $0.2{\mu}m/min$ to over $0.4{\mu}m/min$ when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm $O_2/4\;sccm\;N_2$ gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % $O_2$ composition in the $O_2/N_2$ plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both $N_2$ peak (354.27 nm) and $O_2$ peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.24 no.10 s.181
• /
• pp.2487-2495
• /
• 2000

The acoustic characteristics of expansion chamber will be changed with the variation of inlet/outlet location due to the higher order acoustic mode in a high frequency in which the plane wave theory is not available. In this paper, the acoustic performance of reactive type expansion chamber with circular cross-section is analyzed by using the modified mode matching theory. The sensitivity analysis of four-pole parameters with respect to the location of inlet and outlet is also suggested to increase the acoustic performance. The acoustic power transmission coefficient is used as cost function, and the location of inlet and outlet is used as design variables. The steepest descent method and SUMT algorithm are used for optimization technique. Several results showed that the expansion chamber with optimally located inlet/outlet had better acoustic performance than concentric expansion chamber.

• Journal of Energy Engineering
• /
• v.6 no.1
• /
• pp.87-95
• /
• 1997

A chemical heat pump based on the reversible reactions between metal chlorides and ammonia gas is attractive alternative to compression system and liquid absorption systems in cooling and refrigerating fields. The advantages of chemical heat pump are no regulatory constants due to CFC refrigerants, utilization of gas, industrial waste heat, electricity, fuel oil etc. as heat sources and wide applications to energy storage system, large-scale energy managements for industrial process. The scale-up of chemical heat pump from laboratory prototype to pilot plants necessitates the interpretation of system performance and evaluation of dynamic behavior in the chemical reactor. This study contains the prediction of performance of chemical refrigerator according to operating condition, the dynamic simulations through reactor modelling, which is used for the calculation of reactive medium temperature and the conversion variation with reactor cooling temperature, and the effect survey of block parameters on the power of refrigerator.

• Korean Journal of Metals and Materials
• /
• v.49 no.4
• /
• pp.329-333
• /
• 2011

To develop wide-band noise absorbers with a special design for low-frequency performance, this study proposes a tin oxide (Sn-O) thin films as the noise absorbing materials in a microstrip line. Sn-O thin films were deposited on polyimide film substrates by reactive sputtering of the Sn target under flowing $O_{2}$ gas, exhibiting a wide variation of surface resistance (in the range of $10^{0}-10^{5}{\Omega}$) depending on the oxygen partial pressure during deposition. The microstrip line with characteristic impedance of $50\Omega$ was used for the measurement of noise absorption by the Sn-O films. The reflection parameter $(S_{11})$ increased with a decrease of surface resistance due to an impedance mismatch at the boundary between the film and the microstrip line. Meanwhile, the transmission parameter $(S_{21})$ diminished with a decrease of surface resistance resulting from an Ohmic loss of the Sn-O films. The maximum noise absorption predicted at an optimum surface resistance of the Sn-O films was about $150{\Omega}$. For this film, greater power absorption is predicted in the lower frequency region (about 70% at 1 GHz) than in conventional magnetic sheets of high magnetic loss, indicating that Ohmic loss is the predominant loss parameter for the conduction noise absorption in the low frequency band.

• Atmosphere
• /
• v.29 no.4
• /
• pp.429-438
• /
• 2019

Organic carbon (OC) and elemental carbon (EC) in PM_2.5 were measured with Sunset Laboratory Model-5 Semi-Continuous OC/EC Field Analyzer by NIOSH/TOT method at Anmyeondo Global Atmosphere Watch (GAW) Regional Station (37°32'N, 127°19'E) in July and August, 2017. The mean values of OC and EC were 3.7 ㎍ m^-3 and 0.7 ㎍ m^-3, respectively. During the study period, the concentrations of reactive gases and aerosol compositions were evidently lower than those of other seasons. It is mostly due to meteorological setting of the northeast Asia, where the influence of continental outflow is at its minimum during this season under southwesterly wind. While the diurnal variation of OC and EC were not clear, the concentrations of O₃, CO, NOx, EC, and OC were evidently enhanced under easterly wind at night from 20:00 to 8:00. However, the high concentration of EC was observed concurrently with CO and NOx under northerly wind during 20:00~24:00. It indicates the influence of thermal power plant and industrial facilities, which was recognized as a major emission source during KORUS-AQ campaign. The diurnal variations of pollutants clearly showed the influence of land-sea breeze, in which OC showed good correlation between EC and O₃ in seabreeze. It is estimated to be the recirculation of pollutants in land-sea breeze cycle. This study suggests that in general, Anmyeondo station serves well as a background monitoring station. However, the variation in meteorological condition is so dynamic that it is primary factor to determine the concentrations of secondary species as well as primary pollutants at Anmyeondo station.

• Korean Journal of Materials Research
• /
• v.17 no.7
• /
• pp.366-370
• /
• 2007

Silicon nitride ($Si_3N_4$) ceramics have been considered for various components of nuclear power plants such as the mechanical seal of a reactor coolant pump (RCP), the guide roller for a control rod drive mechanism (CRDM), and a seal support, etc. Corrosion behavior of $Si_3N_4$ ceramics in a high-temperature and high-pressure water must be elucidated before they can be considered as components for nuclear power plants. In this study, the corrosion behaviors of $Si_3N_4$ ceramics containing MgO and $Al_2O_3$ as sintering aids were investigated at a hydrothermal condition ($300^{\circ}C$, 9.0 MPa) in pure water and 35 ppm LiOH solution. The corrosion reactions were controlled by a diffusion of the reactive species and/or products through the corroded layer. The grain-boundary phase was preferentially corroded in pure water whereas the $Si_3N_4$ grain seemed to be corroded at a similar rate to the grain-boundary phase in LiOH solution. Flexural strengths of the $Si_3N_4$ ceramics were significantly degraded due to the corrosion reaction. Results of this study imply that a variation of the sintering aids and/or a control (e.g., crystallization) of the grain-boundary phase are necessary to increase the corrosion resistance of $Si_3N_4$ ceramics in a high-temperature water.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.65-65
• /
• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• International Journal of Automotive Technology
• /
• v.7 no.1
• /
• pp.1-7
• /
• 2006

The ignition delay of a dual fuel system has been numerically investigated by adopting a constant volume chamber as a model problem simulating diesel engine relevant conditions. A detailed chemical kinetic mechanism, consisting of 28 species and 135 elementary reactions, of dimethyl ether (DME) with methane ($CH_{4}$) sub-mechanism has been used in conjunction with the multi-dimensional reactive flow KIVA-3V code to simulate the autoignition process. The start of ignition was defined as the moment when the maximum temperature in the combustion vessel reached to 1900 K with which a best agreement with existing experiment was achieved. Ignition delays of liquid DME injected into air at various high pressures and temperatures compared well with the existing experimental results in a combustion bomb. When a small quantity of liquid DME was injected into premixtures of $CH_{4}$/air, the ignition delay times of the dual fuel system are longer than that observed with DME only, especially at higher initial temperatures. The variation in the ignition delay between DME only and dual fuel case tend to be constant for lower initial temperatures. It was also found that the predicted values of the ignition delay in dual fuel operation are dependent on the concentration of the gaseous $CH_{4}$ in the chamber charge and less dependent on the injected mass of DME. Temperature and equivalence ratio contours of the combustion process showed that the ignition commonly starts in the boundary at which near stoichiometric mixtures could exists. Parametric studies are also conducted to show the effect of additive such as hydrogen peroxide in the ignition delay. Apart from accurate predictions of ignition delay, the coupling between multi-dimensional flow and multi-step chemistry is essential to reveal detailed features of the ignition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.363-363
• /
• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.