• 제목/요약/키워드: Reactive Material

검색결과 705건 처리시간 0.032초

Development of MgH2-Ni Hydrogen Storage Alloy Requiring No Activation Process via Reactive Mechanical Grinding

  • Song, Myoung Youp;Kwak, Young Jun;Lee, Seong Ho;Park, Hye Ryoung
    • 대한금속재료학회지
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    • 제50권12호
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    • pp.949-953
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    • 2012
  • $MgH_2$ was employed as a starting material instead of Mg in this work. A sample with a composition of 94 wt% $MgH_2-6$ wt% Ni (called $MgH_2-6Ni$) was prepared by reactive mechanical grinding. The hydriding and dehydriding properties were then examined. An $MgH_2-Ni$ hydrogen storage alloy that does not require an activation process was developed. The alloy was prepared in a planetary ball mill by grinding for 4 h at a ball disc revolution speed of 250 rpm under a hydrogen pressure of about 12 bar. The sample absorbed 3.74 wt% H for 5 min, 4.07 wt% H for 10 min, and 4.41 wt% H for 60 min at 573 K under 12 bar $H_2$, and desorbed 0.93 wt% H for 10 min, 1.99 wt% H for 30 min, and 3.16 wt% H for 60 min at 573 K under 1.0 bar $H_2$. $MgH_2-6Ni$ after reactive mechanical grinding contained ${\beta}-MgH_2$ (a room temperature form of $MgH_2$), Ni, ${\gamma}-MgH_2$ (a high pressure form of $MgH_2$), and a very small amount of MgO. Reactive mechanical grinding of Mg with Ni is considered to facilitate nucleation, and to reduce the particle size of Mg. $Mg_2Ni$ formed during reactive mechanical grinding also increases the hydriding and dehydriding rates of the sample.

TN mode에서의 Reactive Rod-like Mesogen을 이용한 보상필름의 특성 확인 (Characteristic confirm of Compensated Film Characteristics using Reactive Rod-like Mesogen in Twisted Nematic mode)

  • 전은정;권동원;강병균;임영진;김종훈;성현준;이명훈;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.271-272
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    • 2009
  • We fabricated a hybrid aligned film using reactive rod-like mesogen to reduce light leakage of twisted nematic(TN) cell in off-axis of the dark state. We proved that the fabricated compensation film has hybrid alignment by changing phase retardation according to polar angle. In this paper, we confirmed characteristics of compensation film through simulation results and found the matching factor of simulation results and experimental result. In result, the maximum pretilt angle of hybrid compensated film is $19^{\circ}$ which has phase retardation 0.1445.

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광경화성 고분자를 이용한 단일 갭 반투과형 액정디스플레이 연구 (Study on single gap transflective liquid crystal display using the UV Curable Reactive Mesogen)

  • 허정화;김진호;진미형;임영진;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.293-294
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    • 2009
  • We proposed a novel single gap transflective liquid crystal display (LCD) using liquid crystal with negative dielectric anisotropy. We designed cell structure driven by fringe electric field in the transmissive (T) part and vertical electric field in the reflective (R) part. In the device, high surface pretilt angle of the LC in the R-part is achieved through polymerization of an UV curable reactive mesogen (RM) monomer at surfaces. By optimizing the parameters, a newly developed transflective display has characteristics such as single gap and single gamma curve.

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반응성 스퍼터링법으로 AI/AIN/GaAs 커패시터 제조시 (NH4)2S 처리에 따른 전기적 특성 (Electrical Characteristic of AI/AIN/GaAs MIS capacitor Fabricated by Reactive Sputtering Method for the (NH4)2S Treatment)

  • 추순남;권정열;박정철;이헌용
    • 한국전기전자재료학회논문지
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    • 제20권1호
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    • pp.8-13
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    • 2007
  • In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

광경화성 고분자를 이용한 반투과형 액정디스플레이 (Transfelctive Liquid Crystal Display using UV Curable Reactive Mesogen)

  • 임영진;정은;진미형;김진호;김성수;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.51-52
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    • 2008
  • A single gap transflective liquid crystal display(LCD) driven by fringe electric field in the transmissive(T) region and vertical electric field in the reflective(R) region was designed. Because the pretilt angle is formed in $53^{\circ}$ through polymerization of an UV curable reactive mesogen(RM) monomer at the surface, the effective cell retardation $(d{\Delta}n_{eff})$ value of the R region becomes half of that in the T region where the LCs are homogenously aligned. Consequently, a transflective display driven by a vertical and fringe electric field with a single cell gap and single gamma curves is realized.

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반응성 스퍼터링법으로 Al/AIN/GaAs MIS 커패시터 제조시 DC 전력에 따른 전기적 특성 (Electrical Characteristic of Al/AIN/GaAs MIS Capacitor fabricated by Reactive Sputtering Method for the DC power)

  • 권정열;이헌용;김지균;김병호;김유경
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.566-569
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    • 2001
  • In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

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Cl2/HBr/CF4 반응성 이온 실리콘 식각 후 감광막 마스크 제거 (Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching)

  • 하태경;우종창;김관하;김창일
    • 한국전기전자재료학회논문지
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    • 제23권5호
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    • pp.353-357
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    • 2010
  • Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

광경화성 단분자를 이용한 PVA모드의 8-도메인 형성방안 연구 (Study on PVA mode using the UV curable reactive mesogen (RM))

  • 김우일;김성민;조인영;김미영;손정호;유재진;김경현;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.339-340
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    • 2008
  • The Conventional PVA (patterned vertical alignment) mode showed characteristics of 8-domain using T-T type or C-C type. But these methods have disadvantages such as decreasing aspect ratio and transmittance. In order to resolve these problems, in this paper we have studied a new 8-domain method which is partially using the UV curable reactive mesogen (RM) that is a role in surface stabilization. The characteristic of off-axis color shift is decreased because the part of surface stabilized area is compensated to other area in a pixel. Consequently, the device shows improved color shift by 8-domain.

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On the mixed-mode crack propagation in FGMs plates: comparison of different criteria

  • Nabil, Benamara;Abdelkader, Boulenouar;Miloud, Aminallah;Noureddine, Benseddiq
    • Structural Engineering and Mechanics
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    • 제61권3호
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    • pp.371-379
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    • 2017
  • Modelling of a crack propagating through a finite element mesh under mixed mode conditions is of prime importance in fracture mechanics. In this paper, two crack growth criteria and the respective crack paths prediction in functionally graded materials (FGM) are compared. The maximum tangential stress criterion (${\sigma}_{\theta}-criterion$) and the minimum strain energy density criterion (S-criterion) are investigated using advanced finite element technique. Using Ansys Parametric Design Language (APDL), the variation continues in the material properties are incorporated into the model by specifying the material parameters at the centroid of each finite element. In this paper, the displacement extrapolation technique (DET) proposed for homogeneous materials is modified and investigated, to obtain the stress intensity factors (SIFs) at crack-tip in FGMs. Several examples are modeled to evaluate the accuracy and effectiveness of the combined procedure. The effect of the defects on the crack propagation in FGMs was highlighted.