Browse > Article
http://dx.doi.org/10.4313/JKEM.2007.20.1.008

Electrical Characteristic of AI/AIN/GaAs MIS capacitor Fabricated by Reactive Sputtering Method for the (NH4)2S Treatment  

Chu, Soon-Nam (경원전문대학 전기제어시스템과)
Kwon, Jung-Youl (경원전문대학 전기제어시스템과)
Park, Jung-Cheul (경원전문대학 전자정보과)
Lee, Heon-Yong (명지대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.1, 2007 , pp. 8-13 More about this Journal
Abstract
In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.
Keywords
Reactive sputtering method; Ammonium sulfide solution; AIN;
Citations & Related Records
연도 인용수 순위
  • Reference
1 O. F. Sankey, R. E. Allen, S. F. Ren, and J. D. Dow, J. Vac. Sci. Technol., Vol. B3, p. 1162, 1985
2 S. Ren and R. E. Allen, Solid State Commun., Vol. 64, p. 589, 1987   DOI   ScienceOn
3 H. J. Kang, Y. M. Moon, T. W. Kang, J. Y. IEEm, J. J. IEE, and D. S. Ma, J. Vac. Sci. Technol., Vol. A7, p. 3251, 1989
4 J. A. Van Vechten andJ. F. Wager, J. Appl. Phys., Vol. 57, p. 1653, 1985
5 L. M. Terman, 'An investigation of surface states at a silicon/silicon dioxide interface employing metal-oxide-silicon diode', Solid State Electron, Vol. 5, p. 258, 1962
6 L. Wei, S. Tanigawa, H. Oigawa, and Y. Nannichi, Jpn. J. Appl. Phys., Vol. 30, p. L138, 1991   DOI
7 W. E. Spicer, Z. L-Weber, N. Newman, T. Kendelewieg, R. Cao, C. M cCant, P. Masowald, and K. Miyano, J. Vac. Sci. Technol., Vol. B6, p. 1245, 1988