• Journal of Powder Materials
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• v.23 no.6
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• pp.420-425
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• 2016

N-doped carbon nanofibers as catalysts for oxygen-reduction reactions are synthesized using electrospinning and carbonization. Their morphologies, structures, chemical bonding states, and electrochemical performance are characterized. The optimized N-doped carbon nanofibers exhibit graphitization of carbon nanofibers and an increased nitrogen doping as well as a uniform network structure. In particular, the optimized N-doped carbon nanofibers show outstanding catalytic activity for oxygen-reduction reactions, such as a half-wave potential ($E_{1/2}$) of 0.43 V, kinetic limiting current density of $6.2mAcm^{-2}$, electron reduction pathways (n = 3.1), and excellent long-term stability after 2000 cycles, resulting in a lower $E_{1/2}$ potential degradation of 13 mV. The improvement in the electrochemical performance results from the synergistic effect of the graphitization of carbon nanofibers and the increased amount of nitrogen doping.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.196-200
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• 2011

In this work, poly(methyl methacrylate) (PMMA) was grafted onto amine treated graphite nanosheets ($NH_2$-GNs) and the surface characteristics and physical properties of the $NH_2$-GNs-g-PMMA films were investigated. The graft reaction of $NH_2$-GNs and PMMA was confirmed from the shift of the $N_{1S}$ peak, including amine oxygen and amide oxygen, by X-ray photoelectron spectroscopy (XPS). The surface characteristics of the $NH_2$-GNs-g-PMMA films were measured as a function of the $NH_2$-GN content using the contact angle method. It was revealed that the specific component of the surface free energy (${\gamma}s$) of the films was slightly increased as the $NH_2$-GN content increased. Also, the thermal and mechanical properties of the $NH_2$-GNs-g-PMMA films were enhanced with the addition of $NH_2$-GNs. This can be attributed to the chemical bonding caused by the graft reaction between the $NH_2$-GNs and the PMMA matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.217-220
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• 2001

The possibility of cerium dioxide (CeO$_{7}$ ) thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching CeO$_2$ thin films have been performed in an inductively coupled C1$_2$/CF$_4$/Ar plasma. The high etch rate of the CeO$_2$ thin film was 250 ${\AA}$/m at a 10% addition of Cl$_2$ into the Ar(80)/CF$_4$(20). The surface reaction of the etched CeO$_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.388-392
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• 2002

In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

• Bulletin of the Korean Chemical Society
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• v.20 no.8
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• pp.948-952
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• 1999

Electrophilic substitutions on β-position of 2,5-dimethyl pyrrole have been investigated theoretically. The electron donating methyl groups enrich electron densities on C-3, C-4 positions and π* interactions with methyl groups substituted on C-2 and C-5 positions pushed up the HOMO level of the pyrroles consequently induce rapid substitutions on C-3, C-4 sites. Substitution of phenylsulfonyl group on nitrogen stabilized LUMO levels through weak π bonding interactions. Unexpected deoxidation reaction underwent on the sulfonyl group substituted at C-3 position. The structures were solved by X-ray crystallography. Meanwhile, gas phase HF/6-31G* and density functional method (B3LYP/6-31G*) calculations gave favorable energies for 1-phenylsulfinyl pyrrole (6) over 3-phenylsulfinyl pyrrole (5) by 3.6-4.7 kcal/mol which is contrary to the experimental result. However the methods involve the effects of molecular polarizability and solvent, molecular dynamics (MD) and ab-initio self consistent reaction field (SCRF) calculations showed same trend as experiments. According to MD calculations, compound 5 is more stable than compound 6 by 4.15 kcal/mol and the SCRF, HF/6-31G* calculations gave more stable energy value for structure 5 than 6 by 0.03 kcal/mol.

• Journal of Powder Materials
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• v.28 no.1
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• pp.25-30
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• 2021

The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.49-56
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• 2024

Superhydrophobic surfaces have been expected to be able to provide considerable performance improvements and introduce innovative functions across diverse industries. However, representative methods for fabricating superhydrophobic surfaces include etching the substrate or attaching nanosized particles, but they have been limited by problems such as applicability to only a few materials or low adhesion between particles and substrates, resulting in a short lifetime of superhydrophobic properties. In this work, we report a novel coating technique that can achieve superhydrophobicity by electrophoretic deposition of aluminum nitride (AlN) nanopowders and their self-bonding to form a surface structure without the use of binder resins through a hydrolysis reaction. Furthermore, by using a water-soluble adhesive as a temporary shield for the electrophoretic deposited AlN powders, hierarchical aluminum hydroxide structures can be strongly adhered to a variety of electrically conductive substrates. This binder-free technique for creating hierarchical structures that exhibit strong adhesion to a variety of substrates significantly expands the practical applicability of superhydrophobic surfaces.

• Applied Chemistry for Engineering
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• v.9 no.2
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• pp.185-192
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• 1998

Four kinds of polyamicacids(PAAs) were prepared by the condensation reaction of four diamines with different linkages, 3,3'-diaminodiphenyl sulfone(3,3'-$DDSO_2$), 4,4'-diaminodiphenyl sulfone(4,4'-$DDSO_2$), 4,4'-methylene dianiline(4,4'-MDA) and 4,4'-oxydianiline(4,4'-ODA), and dianhydride, 3,3', 4,4'-benzophenone tetracarboxylic dianhydride (BTDA) using the solvent, dimethylacetamide(DMAc). These four PAAs were blended with poly[2,2-(m-phenylene)-5,5'-bibenzimidazole](PBI) from the solution blending. Then called as Blend-I, II, III, and IV, respectively. Cast films or precipitated powders of the PBI/PAA blends were cured at a higher temperature than expected Tg to transform into PBI/PIs blends. Miscibility, specific intermolecular interaction for miscibility and their relative strength as a function of polyimide chemical structure with different four diamines in the PBI/PI systems were investigated. Four blends used in this study were all miscible, and the specific intermolecular interactions existing in these blends was thought to be the hydrogen bonding between the N-H of PBI and the C=O of PIs. The hydrogen bonding in the blends were shown to be stronger in the Blend-III and Blend-IV than Blend-I and II. It is speculated that the differences of hydrogen bonding strength of PBI/PI blends are dependent upon chemical structures of PIs, that is, PIs consisting of $SO_2$ group have a weaker hydrogen bonding strength than those of O or $CH_2$ group because the former has a larger spacer than the latter.

• Restorative Dentistry and Endodontics
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• v.21 no.2
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• pp.602-618
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• 1996

The purpose of this study was to investigate the effect of acid treatment of fluoride applied dentin surface with various concentrations of phosphoric acid for various periods of time on dentin bonding. Dentin specimens prepared from freshly extracted bovine mandibular anterior teeth were divided into fluoridated and nonfluoridated groups. Specimens of nonfluoridated group were pretreated with 10% phosphoric acid for 15 seconds. Those of fluoridated groups were treated with 2% sodium fluoride or 2% stannous fluoride solution for 5 minutes and stored in $37^{\circ}C$ distilled water for 3 days, followed by phosphoric acid treatment. The concentrations of phosphoric acid were 10%, 32% or 50% and the treatment periods of time were 15, 30 or 60 seconds. All the specimens were bonded with All Bond$^{(R)}$ 2 and Bisfil$^{TM}$ composite resin. After bonded specimens were stored in $37^{\circ}C$ distilled water for 24 hours, tensile bond strengths of each specimens were measured and the pretreated dentin and the fractured dentin surfaces were examined under the scanning electron microscope. The results were as follows : The tensile bond strengths from the fluoridated groups were significantly lower than those from the nonfluoridated group when the concentrations of phosphoric acid and the treatment periods of time were equal in all the groups (p<0.05). In general, the higher the concentration of phosphoric acid and the longer the treatment period of time for acid etching on the fluoride applied dentin surface, the higher were the bond strength values. Recovery of bond strength of the dentin bonding agent was better in the NaF applied group than in the $SnF_2$ applied one. SEM findings of NaF applied and $SnF_2$ applied dentin surfaces demonstrated reaction product-covered and partially or completely obstructed dentinal tubules. SEM findings of dentin surfaces fluoridated for 5 minutes followed by etching showed wider tubular openings and more clean dentin surfaces when dentin was etched with higher concentration of phosphoric acid for longer period of time. On the SEM observations of the fractured dentin-resin interface, the etched specimens of fluoridated group showed an adhesive failure mode when the concentration of phosphoric acid and the treatment period of time were same as in the nonfluoridated group. As the concentration of phosphoric acid and the treatment period of time increase during acid etching, the cohesive failure area increased. However, excessive acid etching caused adhesive failure.