• Journal of the Semiconductor & Display Technology
• /
• v.4 no.2 s.11
• /
• pp.39-43
• /
• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.8
• /
• pp.1805-1810
• /
• 2009

The adsorptions of trimethygallium (TMG) and arsine (As$H_3$) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of As$H_3$ adsorption on the surface was also identified. Among these, the methane loss reaction depositing –Ga(C$H_3)_2$ was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

• Proceedings of the Korean Geotechical Society Conference
• /
• 2003.03a
• /
• pp.189-196
• /
• 2003

Soil-cement column is often used as a contaminant barrier. This study presents the results of experimental study performed to investigate the changes of properties of soil-cement column under the attack of acids. Sulfuric nitric, and ascetic acid were used as contaminants. Specimen were made of clayey and sandy soils with addition of cement and water Permeability of soil-cement decreased with time during permeability test. When significant amount of acid percolated the specimen, permeability increased and compressive strength decreased due to the dissolution and leaching of cement and its chemical reaction compounds. Sulfuric and nitric acid were more effective than ascetic acid in deteriorating soil-cement column. Amount of acid required to lower the pH of soil cement below 12 was calculated from the results of permeability tests. This leads to a conclusion that, under the conditions employed in this study, the chemical stability of soil-cement column could be maintained against acid attack for longer than generally accepted lifetime of contaminant barriers.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.5 no.3
• /
• pp.105-112
• /
• 2002

A combined process of non-thermal plasma and catalytic techniques has been investigated to treat toxic gas compounds in air. The treated gas in the present study is $CH_3$CN that has been known to be a simulant of toxic chemical agent. A planar type dielectric barrier discharge(DBD) reactor has been used to generate non-thermal plasma that produces various chemically active species, O, N, OH, $O_3$, ion, electrons, etc. Several different types of adsorbents and catalysts, which are MS 5A, MS 13X, Pt/alumina, are packed into the plasma reactor, and have been tested to save power consumption and to treat by-products. Various aspects of the present techniques, which are decomposition efficiencies along with the power consumption, by-product analysis, reaction pathways modified by the adsorbents and catalysts, have been discussed in the present study.

• Journal of the Korean Chemical Society
• /
• v.19 no.5
• /
• pp.294-303
• /
• 1975

An idealized linear collision model has been employed to calculate the reaction probabilities for the three-atom rearrangement reaction $A+B-C{\to}A-B+C$. Potential energy surface used is also a highly idealized one with constant values. Numerical results were obtained for the system in which the atomic masses of all three atoms are the same. Potentials were varied to see the effect of the magnitude of the opposing potential barrier on the reaction probabilities. Results obtained were compared with those obtained using different models.

• Journal of the Korean Chemical Society
• /
• v.32 no.2
• /
• pp.103-112
• /
• 1988

For two possible paths of thermal ring opening reactions, the approximate reaction path functions, their norms and the approximate reaction path average energies are computed and compared. Illustrated examples clearly justify the postulate that the path with larger norm and lower average energy has lower barrier height than the other.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.11
• /
• pp.1657-1660
• /
• 2004

Several critical geometries associated with the rearrangement of $CH_3SNO_2\;to\;CH_3SONO$ are calculated with the density functional theory (DFT) method and compared with those of the ab initio molecular orbital methods. There are two probable pathways for this rearrangement, one involving the transition state of an oxygen migration and the other through the homolytic decomposition to radicals. The reaction barrier via the transition state is about 60 kcal/mol and the decomposition energy into radicals about 35 kcal/mol, suggesting that the reaction pathway via the homolytic cleavage to radical species is energetically favorable. Since even the homolytic cleavage requires large energies, the rearrangement reaction is unlikely without the aid of catalysts.

• Bulletin of the Korean Chemical Society
• /
• v.12 no.6
• /
• pp.692-698
• /
• 1991

The reaction path Smoluchowski equation approach developed in a recent work to calculate the rate constant for a diffusive multidimensional barrier crossing process is extended to incorporate the configuration-dependent diffusion matrix. The resulting formalism is then applied to the investigation of stilbene photoisomerization dynamics. Adapting a model two-dimensional potential and a model diffusion matrix proposed by Agmon and Kosloff [J. Phys. Chem.,91 (1987) 1988], we derive an eigenvalue equlation for the relaxation rate constant of the stilbene photoisomerization. This eigenvalue equation is solved numerically by using the finite element method. The advantages and limitations of the present method are discussed.

• Bulletin of the Korean Chemical Society
• /
• v.13 no.5
• /
• pp.538-541
• /
• 1992

An approximate scheme for evaluating total reaction probability is proposed. Semiclassical boundary conditions are imposed well before the asymptotic region in the reactant and product channels to calculate the Green's function and its derivatives. Propagations are confined to a limited regime near the activated complex. Calculations are made for one dimensional Eckart barrier model of H + $H_2$ reaction. Implications of the procedure in multi-dimensional systems are discussed.

• Journal of the Korean Society for Precision Engineering
• /
• v.26 no.3
• /
• pp.122-128
• /
• 2009

DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.