• Korean Journal of Materials Research
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• v.22 no.4
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• pp.207-210
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• 2012

The preparation of $Sm_2O_3$ doped $CeO_2$ in Igepal CO-520/cyclohexane reverse micelle solutions has been studied. In the present work, we synthesized nanosized $Sm_2O_3$ doped $CeO_2$ powders by reverse micelle process using aqueous ammonia as the precipitant; hydroxide precursor was obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase, and poly (xoyethylene) nonylphenylether (Igepal CO-520) as the non-ionic surfactant. The synthesized and calcined powders were characterized by Thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), and Transmission electron microscopy (TEM). The crystallite size was found to increase with increase in water to surfactant (R) molar ratio. Average particle size and distribution of the synthesized $Sm_2O_3$ doped $CeO_2$ were below 10 nm and narrow, respectively. TG-DTA analysis shows that phase of $Sm_2O_3$ doped $CeO_2$ nanoparticles changed from monoclinic to tetragonal at approximately $560^{\circ}C$. The phase of the synthesized $Sm_2O_3$ doped $CeO_2$ with heating to $600^{\circ}C$ for 30 min was tetragonal $CeO_2$. This study revealed that the particle formation process in reverse micelles is based on a two step model. The rapid first step is the complete reduction of the metal to the zero valence state. The second step is growth, via reagent exchanges between micelles through the inter-micellar exchange.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.54-60
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• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.453-457
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• 2007

Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.237-241
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• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.503-509
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• 2013

In this study, $Cu(In_{1-x},Ga_x)Se_2$ (CIGS) thin films were prepared on the Mo coated soda-lime glass by the DC magnetron sputtering and a subsequent selenization process. For the selenization process, selenization rapid thermal process(RTP) with cracker cell, which was helpful to smaller an atomic of Se, was adopted. To make CIGS layer, they were then annealed with the cracked Se. Based on this selenization method, we made several CIGS thin film and investigated the effects of In deposition time, and selenization time. Through x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and atomic force microscopy (AFM), it is found that the Mo/In/CuGa structure and the high sputtering power shows the dominant chalcopyrite structure and have a uniform distribution of the grain size. The CIGS films with the In deposition time of 5 min has the best structure due to the smooth surface. And CIGS films with the selenization time of 50 min show good crystalline growth without any voids.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.646-651
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• 2008

The electrolytic reduction of spent oxide fuel involves the liberation of oxygen in a molten LiCl electrolyte, which results in a chemically aggressive environment that is too corrosive for typical structural materials. It is essential to choose the optimum material for the process equipment handling molten salt. IN713LC is one of the candidate materials proposed for application in electrolytic reduction process. In this study, yttria-stabilized zirconia (YSZ) top coat was applied to a surface of IN713LC with an aluminized metallic bond coat by an optimized plasma spray process, and were investigated the corrosion behavior at $675^{\circ}C$ for 216 hours in the molten salt $LiCl-Li_2O$ under an oxidizing atmosphere. The as-coated and tested specimens were examined by OM, SEM/EDS and XRD, respectively. The bare superalloy reveals obvious weight loss, and the corrosion layer formed on the surface of the bare superalloy was spalled due to the rapid scale growth and thermal stress. The top coatings showed a much better hot-corrosion resistance in the presence of $LiCl-Li_2O$ molten salt when compared to those of the uncoated superalloy and the aluminized bond coatings. These coatings have been found to be beneficial for increasing to the hot-corrosion resistance of the structural materials for handling high temperature lithium molten salts.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.1
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• pp.8-18
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• 2022

With rapid industrialization and population growth, fossil fuel use has increased, which has a significant impact on the environment. Hydrogen does not cause contamination in the energy production process, so it seems to be a solution, but it is essential to find an appropriate storage method due to its low efficiency. In this study, Mg-based alloys capable of ensuring safety and high volume and hydrogen storage density per weight was studied, and Mg₂NiH_x synthesized with Ni capable of improving hydrogenation kinetics. In addition, in order to improve thermal stability, a hydrogen storage composite material synthesized with CaO was synthesized to analyze the change in hydrogenation reaction. In order to analyze the changes in the metallurgical properties of the materials through the process, XRD, SEM, BET, etc. were conducted, and hydrogenation behavior was confirmed by TGA and hydrogenation kinetics analysis. In addition, in order to evaluate the impact of the process on the environment, the environmental impact was evaluated through "Material Life Cycle Assessments" based on CML 2001 and EI99' methodologies, and compared and analyzed with previous studies. As a result, the synthesis of CaO caused additional power consumption, which had a significant impact on global warming, and further research is required to improve this.