• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.10B
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• pp.1971-1978
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• 1999

In this paper, we study the effects of long-range dependence (LRD) in VBR video traffic on queueing system. This paper consists of Part I and II. In Part I, we present a (LRD) video traffic model based on the shifting-level (SL) process. We observe that the ACF of an empirical video trace is accurately captured by the shifting-level process with compound correlation (SLCC): an exponential function in short range and a hyperbolic function in long range. We present an accurate parameter matching algorithm for video traffic. In the Part II, we offer the queueing analysis of SL/D/1/K called ‘quantization reduction method’. Comparing the queueing performances of the DAR(1) model and the SLCC with that of a real video trace, we identify the effects of SRD and LRD in VBR video traffic on queueing performance. Simulation results show that Markoivian models can estimate network performances fairly accurately under a moderate traffic load and buffer condition, whereas LRD may have a significant effect on queueing behavior under a heavy traffic load and large buffer condition.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.1
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• pp.98-104
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• 2010

In order to evaluate the performance of a grounding system against lightning or fault currents including high frequency components, the grounding impedance should be considered rather than the steady state ground resistance. To evaluate the ground impedance, the frequency dependence of resistivity and relative dielectric constant of the soil have to be analyzed. This paper deals with the frequency dependence of the resistivity and relative dielectric constant of three types of soil on water content. As a result, the resistivity of soil is getting lower with increasing of water content. It is nearly independent of the frequency in the range less than 1[MHz], and is decreased over the frequency range above 1[MHz]. On the other hand, the relative dielectric constant is rapidly decreased with the frequency in the range less than 1[MHz], but it is nearly independent on the frequency over the range of 1[MHz]. It was found from the experiments that the frequency-dependant resistivity and relative dielectric constant of soil should be considered when designing the grounding systems for protection from lightning or switching surges.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.299-303
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• 2002

The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.

• Journal of the Korean Society of Safety
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• v.1 no.1
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• pp.41-49
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• 1986

Modern technological progress demands the use of materials at high temperature and high pressure. One of the most critical factors in considering such applications-perhaps the most critical one-is creep behavior. In this study the activation energy for the creep rupture (Qf) and the stress dependence of rupture time (n') have been determined during creep of Al 7075 alloy eve, the temporature range of $200^{\circ}C to 500^{\circ}C$ and stress range of 0.64 kgf/$\textrm{mm}^2$ to 9.55 kgf/$\textrm{mm}^2$, respectively, in order to investigate the creep-rupture property. Constant load creep tests were carried out in the enperiment At around the temperature $210^{\circ}C~390^{\circ}C$ and the stress level 1.53~9.55(kgf/$\textrm{mm}^2$), the stress dependence of rupture time(n') had the value of 6.6~6.78 but at 50$0^{\circ}C$, the value of 1.3. Besides at around the temperature of $200^{\circ}C~500^{\circ}C$ and under the stress level of 0.89~8.51 (kgf/$\textrm{mm}^2$), the activation energy for the creepprupture (Qf) was nearly equal to that of the volume self diffusion of pure aluminum (34Kca1/mo1e)

• Korean Journal of Food Science and Technology
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• v.22 no.1
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• pp.66-70
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• 1990

Correlations have been developed for estimating the viscosities of ternary mixtures of sucrose-sodium chloride-water over a temperature range of $10-40^{\circ}C$ and a concentration range of 1.0064-5.7037 molality sodium chloride and 0.3436-2.5966 molality sucrose. The viscosity data of sodium chloride and sucrose solutions have been fitted very well utilizing proposed polynomial equation, respectively and the temperature dependence analysis for sodium chloride and sucrose solutions showed that 1/T dependence is accurate. The experimental viscosity data for surose-sodium chloride-water mixtures were fitted to a five parameter polynomial with a goodness of fit approximating experimental error and it seems that there is no significant Interaction between sodium chloride and surose solutions.

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.506-512
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• 2019

Although graphene has been successfully grown in large scale via chemical vapor deposition (CVD), it is still questionable whether the mechanical properties of CVD graphene are equivalent to those of exfoliated graphene. In addition, there has been an issue regarding how the tilt angle of the grain boundary (GB) affects the strength of graphene. We investigate the mechanical properties of CVD graphene with nanoindentation from atomic force microscopy and transmission electron microscopy. Surprisingly, the samples with GB angles of 10° and 26° yielded similar fracture stresses of ~ 80 and ~ 79 GPa, respectively. Even for samples with GB exhibiting a wider range, from 0° to 30°, only a slightly wider fracture stress range (~ 50 to ~ 90 GPa) was measured, regardless of tilt angle. The results are contrary to previous studies that have reported that GBs with a larger tilt angle yield stronger graphene film. Such a lack of angle dependence of GB can be attributed to irregular and well-stitched GB structures.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.185-188
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• 2009

The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.7B
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• pp.620-627
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• 2003

Ethernet passive optical networks (EPONs) are an emerging access network technology that provide a low-cost method of deploying optical access lines between a carrier's central office and customer sites. Dynamic bandwidth allocation (DBA) provides statistical multiplexing between the optical network units for efficient upstream channel utilization. To support dynamic bandwidth distribution, 1 propose an cyclic polling-based DBA algorithm for differentiated classes of service in EPONs. And, I show that an interleaved polling scheme severely decreases downstream channel capacity for user traffics when the upstream network load is low. To obtain realistic simulation results, I used synthetic traffic that exhibits the properties of self-similarity and long-range dependence I then analyzed the network performance under various loads, specifically focusing on packet delays for different classes of traffic.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.33-36
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• 1994

The x values of nonstoichiometric chemical formula, $Tb_4O_{7-{\delta}}\;or\;TbO_{1.5+x}$, have been determined in temperature range from 600$^{\circ}$C to 1000$^{\circ}$C under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ to 1 ${\times}$ 10$^{-5}$ atm by using quartz microbalance. The x values varied from 0.0478 to 0.1964 in the above conditions. The enthalpy of formation for x' in TbO$_{1.5+(0.25-xo-x')}$, ${\delta}H_f$, was 4.93-3.40 kcal mol$^{-1}$ and the oxygen partial pressure dependence was -1/8.80∼-1/11.8 under these conditions. The electrical conductivity of the $TbO_{1.5+x}$ was measured under the same conditions and the values varied from about 10$^{-3}$ to 10$^{-6}\;{\Omega}^{-1}cm^{-1}$ within semiconductor range. The activation energies for the conduction increase with oxygen partial pressure from 0.83 to 0.89 eV under the above conditions. The l/n values obtained from the oxygen pressure dependence of the conductivity are 1/4.4-1/5.2. The conduction mechanism, defect structure, and other physical properties of the oxides are dicussed with the x values, the electrical conductivity values, and the thermodynamic data.

• Korean Journal of Optics and Photonics
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• v.12 no.5
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• pp.389-393
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• 2001

A wavemeter is realized using the fact that the coupling coefficient of a WDM coupler is a function of wavelength. Prototype devices with 1500 nm/1600 nm and 1510 nm/1550 nm WDM couplers are successfully fabricated and tested in the laboratory. The measurement resolutions are $\pm$0.27 nm over a wavelength range of 1515 nm~1576 nm for the device with 1500 nm/1600 nm WDM coupler and $\pm$0.103 nm over a wavelength range of 1520 nm~1543 nm for th4e device with 1510 nm/1550 nm WDM coupler. The dependence of operating characteristics on the input signal power is insignificant. However the temperature dependence is ~0.06 nm/$^{\circ}C$.