• Journal of Power Electronics
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• 제18권4호
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• pp.1037-1050
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• 2018

This paper presents a novel reconfigurable selective harmonic elimination technique to control harmonics over a wide range of Modulation Indexes (MI) in Multi-Level Inverter (MLI). In the proposed method, the region of the MI is divided into various sectors and expressions are formulated with different switching patterns for each of the sectors. A memetic BBO-MAS (Biogeography Based Optimization - Mesh Adaptive direct Search) optimization algorithm is proposed for solving the Selective Harmonic Elimination - Pulse Width Modulation (SHE-PWM) technique. An experimental prototype is developed using a Field Programmable Gate Array (FPGA) and their FFT spectrums are analyzed over a wide range of MI using a fluke power logger. Simulation and experimental results have validated the performance of the proposed optimization algorithms and the reconfigurable SHE-PWM technique. Further, the sensitivity of the harmonics has been analyzed considering non-integer variations in the magnitude of the input DC sources.

• ETRI Journal
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• 제34권5호
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• pp.727-733
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• 2012

This paper demonstrates a new driving scheme that allows reducing the supply voltage of data drivers for low-power active matrix organic light-emitting diode (AMOLED) displays. The proposed technique drives down the data voltage range by 50%, which subsequently diminishes in the peak power consumption of data drivers at the full white pattern by 75%. Because the gate voltage of a driving thin film transistor covers the same range as a conventional driving scheme by means of a level-shifting scheme, the low-data supply scheme achieves the equivalent dynamic range of OLED currents. The average power consumption of data drivers is reduced by 60% over 24 test images, and power consumption is kept below 25%.

• 전자공학회논문지A
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• 제30A권3호
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• pp.34-42
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• 1993

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

• 한국전자파학회논문지
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• 제19권8호
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• pp.807-813
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• 2008

본 논문에서는 선형성 증가를 위해 도허티 증폭기의 게이트 바이어스를 조정하는 방식을 제시하였다. 도허티 증폭기의 선형성 향상은 출력 결합 지점에서의 고조파 상쇄를 통해 이루어진다. 하지만 고조파의 상쇄는 그 크기와 위상이 출력 지점에서 같은 크기와 서로 다른 위상을 가지고 있어야 이루어질 수 있는데, 넓은 출력 전력 범위에서 위와 같은 조건을 만족시키는 것은 쉽지 않다. 선형성 증가를 위해 도허티 증폭기의 캐리어 증폭기와 피킹 증폭기의 선형성 특성을 입력 전력과 각 증폭기의 게이트 바이어스를 조정함으로써 살펴보았다. 살펴본 특성을 기본으로 하여 고조파 상쇄 전력 범위를 증가시키기 위해, 각 전력 레벨에 맞는 게이트 바이어스를 증폭기에 인가하였다. 게이트 바이어스 제어를 통한 선형성 향상을 알아보기 위해, 2.345 GHz에서 Eudyna사의 10-W PEP GaN HEMT EGN010MK 소자를 이용하여 도허티 전력 증폭기를 설계하였고, $P_{1dB}$로부터 10 dB back-off 지점인 33 dBm에서 고효율과 고선형성을 위해 최적화 되었다. WCDMA 1-FA 신호에 대해 제안된 게이트 바이어스 컨트롤 된 도허티 증폭기는 2.8 dB의 선형성 개선을 확인할 수 있었으며, 26 %의 PAE를 확인할 수 있었다. 또한, 802.16-2004 신호에 대해 RCE가 2 dB 증가됨을 확인할 수 있었다.

• Journal of electromagnetic engineering and science
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• 제1권1호
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of Power Electronics
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• 제15권4호
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• pp.861-875
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• 2015

This paper presents a wide frequency range LLC resonant controller IC for LED backlight units. In this paper a new phase-domain resonance deviation prevention circuit (RDPC), which covers a wide frequency and input voltage range, is proposed. In addition, a wide range gate clock generator and an automatic dead time generator are proposed. The chip is fabricated using 0.35 μm BCD technology. The die size is 2 x 2 mm2. The frequency of the clock generator ranges from 38 kHz to 400 kHz, and the dead time ranges from 300 ns to 2 μs. The current consumption of the LLC resonant controller IC is 4 mA for a 100 kHz operation frequency using a supply voltage of 15 V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Journal of Advanced Marine Engineering and Technology
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• 제8권1호
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• pp.72-84
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• 1984

In this paper, the characteristics relating to the stator voltage control of a small three phase squirrel cage induction motor by means of symmetrically trggered triacs instead of antiparallel SCR's is described. A complete model of the system with 220V, $3{\phi}$, 1HP motor and triac gate control circuit has been designed and tested in the laboratory, and the experimental results are compared with the numerical values. As a result of the above investigation, it is found that the range of induction motor speed control by stator voltage control is narrow.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.695-698
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• 2003

This paper presents a Si power LDMOSFET for power amplifiers in the 1.8-2.2GHz frequency range for the base station of personal communication systems. To improve the cut-off frequency, the proposed Si power LDMOSFET has small gate to drain capacitance by shielding the electric fields with extended source electrode and forming the field oxide structure in drain region. The proposed Si power LDMOSFET can be used for a power amplifier and it has 32% of power added efficiency and 39.5dBm of output power when the supply voltage is 28V and the operating frequency is 1.9GHz.

• Journal of Electrical Engineering and information Science
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• 제3권3호
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• pp.366-372
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• 1998

A high efficiency interleaved active clamp forward converter with self driven synchronous rectifiers for a modular power processor is presented. To simplify the gate drive circuits, N-P MOSFETs coupled active clamp method is used. An efficiency about 90% for the load range of 50-100% is achieved. The details of design for the power stage and current mode control circuit are provided, and also some experimental results are given.