• Current Optics and Photonics
• /
• v.2 no.6
• /
• pp.589-594
• /
• 2018

We have investigated the dimensional nature of center-of-mass exciton confinement states in a CdMnTe/CdTe/CdMnTe heterostructure, where the CdTe well is too wide (144 nm) to confine both electrons and holes but able to confine whole excitons in the center-of-mass coordinate. Fine multiple photoluminescence spectra with a few meV separation were observed at 6 K. From the thickness dependence of the transition rate, they were attributed to even numbered center-of-mass exciton confinement states (N = 2, 4, 6, ${\cdots}$, 18). Dimensionality of the center-of-mass exciton confinement states was also investigated in terms of temperature dependence of radiative decay time. At low temperatures (${\leq}12K$), we found that the ground state excitons are likely localized possibly due to the barrier interface fluctuation, resulting in a constant decay time (~350 ps). With increased temperature (${\geq}12K$), localized excitons are thermally released, giving rise to a linear temperature dependence of radiative decay time as an evidence of two-dimensional nature.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.7
• /
• pp.747-753
• /
• 1998

The phoisomerization process of symmetric carbocyanine dyes such as 3,3'-diethyloxadicarbocyanine iodide (DODCI), 3,3'-diethylthiadicarbocyanine iodide (DfDCI), 1,1'-diethyl-2,2'-dicarbocyanine iodide (DDI), 1,1'-diethyl-2,2'-carbocyanine iodide (DCI), and cryptocyanine (1,1'-diethyl-4,4'-carbocyanine) iodide (CCI) have been studied by measuring the steady state and time resolved fluorescence spectra and the ground-state recovery profiles. The steady-state fluorescence spectrum of photoisomer as a function of concentration and excitation wavelength provides the evidence that the fluorescence of photoisomer is formed by the radiative energy transfer from the normal form and the quantum yield for the formation of photoisomer is increased by decreasing the excitation wavelength. The fluorescence decay profiles have been measured by using the time correlated single photon counting (TCSPC) technique, showing a strong dependence on the concentration and the detection wavelength, which is due to the formation of excited photoisomers produced either by the radiative energy transfer from the non-nal form or by absorbing the 590 nm laser pulse. We first report the fluorescence decay time of photoisomers for these cyanine dyes. The experimental results are explained by introducing the semiempirical calculations. The ground state recovery profiles of DTDCI, DDI, and CCI normal forms have been measured, showing that the recovery time from the singlet excited state is similar with the fluorescence decay time.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.301-307
• /
• 2006

We have investigated optical properties of p-modulation doped In(Ga)As quantum dots (QDs) on InP substrate with a comparison with the undoped QDs. Photoluminscence (PL) intensity of doped QDs at 10 K was about 10 times weaker than that of undoped QD sample. The decay time of doped QD sample at its PL peak, obtained from the time-resolved PL (TR-PL) experiment at 10 K, was very fast compared to that of undoped sample. We interpret that this fast decay time of the doped QD sample comes from the addition of non-radiative recombination paths, which are originated from the doping-related defects.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.184-184
• /
• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Journal of computational fluids engineering
• /
• v.15 no.1
• /
• pp.1-8
• /
• 2010

RCCS is a passive safety-related system that removes the decay heat of VHTR when normal decay heat removal systems are in failure. Understanding thermo-hydraulics of RCCS is important to design a safer VHTR. RCCS consists of 292 cooling panels, which are placed in the reactor cavity. The layout of RCCS gives an idea that, for CFD simulations, cooling panels can be assumed to be one annulus tube. This assumption can reduce significantly the computational time, especially for the unsteady simulation. To simulate RCCS in an axisymmetric manner, three models were suggested and compared. Each model has (1) the same outer radius, (2) the same cross-sectional area (3) the same pressure drop, respectively, as the RCCS cooling panels. The steady-state simulation was conducted with these three models and the DO radiation model. It is found that over 90% of the heat from the outer wall of the reactor pressure vessel is transported to the RCCS by radiative heat transfer. The simulation with the third model, which has the same pressure drop as the design, estimates the closest wall temperature profiles to a thermo-hydraulic code, GAMMA+, result.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.8
• /
• pp.663-669
• /
• 1994

Decay kinetics of Ga(5s), Ga(5p) and Ga(4d) atoms in Ar were studied by laser induced fluorescence technique. Theground state gallium atoms in the gas phase were generated by pulsed dc discharge of trimethyl gallium and argon mixtures. Both pulsed discharge and YAG-DYE laser system were controlled by a dual channel pulse generator and the delay time between the end of discharge and laser pulses was set 3.0-6.0 ms. The Ga(5s) and Ga(4d) atoms were generated by single photon excitation from the ground state Ga atoms and radiative lifetimes as well as the total quenching rate constants in Ar were obtained from the pressure dependence of the fluorescence decay rates. The Ga(5p) atoms were populated by a two-photon excitation method and the cascade fluorescence from Ga(5s) atoms were analyzed to extract quenching rate constant of Ga(5p) atoms by Ar in addition to radiative lifetimes of Ga(5p) state. The magnitudes of the quenching rate constants by Ar for the low-lying excited states of Ga atoms are 1.6-3$ {\times}10^{-11}cm^3$ molecul$e^{-1}s^{-1}$, which are much larger than those for alkali, alkaline earth and Group 12 metals. Based on the measured rate constants, kinetic simulations were done to assign state-to-state rate constants.

• Korean Journal of Optics and Photonics
• /
• v.1 no.1
• /
• pp.52-57
• /
• 1990

Employing a picosecond laser and fast electronics. we developed a time -correlated single photon counting (TCSPC) system by which ltuninescence lifetimes can be measured in the subnanosecond to microsecond scale. We also studied non-radiative decay dynamics and rotational motion of DODC! laser dye in solution using this system. ystem.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.172-173
• /
• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Journal of the Korean Ceramic Society
• /
• v.35 no.10
• /
• pp.1101-1106
• /
• 1998

Various $Zn_{2-x}SiO_4$:xMn based green phosphors were investigated in association with a co-dopant. The co-dopant incorporated into the phosphors are believed to alter the internal energy state of $Zn_{2-x}SiO_4$ : xMn So that the improvement in their intensity could be expected. Phosphor samples were prepared using the solid state reaction therein raw powders are mixed in the acetone and successively fired at $1300^{\circ}C$ for 4 hour. The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmoshpere and thereby giving The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmosphere and thereby giving rise to conspicuous enhancement of radiative efficiency. Basically the 0.08 mole ratio of the Mn con-centrations has the maximum value of the intensity so that a co-dopant are added to this Mn con-centration. When the Mg is co-doped with Mn luminescent intensity is proven to be promoted significantly.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.6
• /
• pp.233-235
• /
• 2004

Shaped single crystals of Bi : $Y_3Ga_5O_{12}$(Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy $6s^2$ \longrightarrow 6s6p transition of $Bi^{3+}$ , while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited $Bi^{3+}$ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.