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Scintillating properties of Bi-doped $Y_3Ga_5O_{12}$  

Novoselov, Andrey (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan Science and Technology Agency)
Yoshikawa, Akira (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
Nikl, Martin (Institute of Physics AS CR)
Fukuda, Tsuguo (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
Abstract
Shaped single crystals of Bi : $Y_3Ga_5O_{12}$(Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy $6s^2$ \longrightarrow 6s6p transition of $Bi^{3+}$ , while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited $Bi^{3+}$ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.
Keywords
Rare-earth garnet; Luminescent properties; $Bi^{3+}$;
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