• Title/Summary/Keyword: RTA treatment

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RTA Post-treatment of Thermal T${a_2}{O_5}$ Thin Films (열산화 T${a_2}{O_5}$박막에 미치는 RTA후처리의 영향)

  • Mun, Hwan-Seong;Lee, Jae-Seok;Han, Seong-Uk;Park, Sang-Gyun;Yang, Seung-Ji;Lee, Jae-Cheon;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.3 no.3
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    • pp.310-315
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    • 1993
  • The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

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Effect of RTA Treatment on $LiNbO_3$ MFS Memory Capacitors

  • Park, Seok-Won;Park, Yu-Shin;Lim, Dong-Gun;Moon, Sang-Il;Kim, Sung-Hoon;Jang, Bum-Sik;Junsin Yi
    • The Korean Journal of Ceramics
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    • v.6 no.2
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    • pp.138-142
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    • 2000
  • Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

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Electrical Properties of 50% Pb-excess PZT Thin Films Deposited on the Glass Substrates (유리기판위에 증착한 50% Pb-excess PZT박막의 전기적특성)

  • Jeong, Kyu-Won;Park, Young;Ju, Pil-Yeon;Park, Ki-Yup;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.5
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    • pp.370-375
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    • 2001
  • PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

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Semi-rigid Coaxial Cable Antenna for RTA (RTA용 반강체 동축케이블 안테나)

  • 강철준;박성교;문장원;박종백
    • Proceedings of the IEEK Conference
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    • 2003.07a
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    • pp.262-265
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    • 2003
  • Radiofrequency thermal ablation (RTA) as one of the microwave hyperthermia is becoming the treatment of choice for small but inoperable tumors of the liver. In this paper, we designed the applicator composed of semi-rigid coaxial cable antenna with a ring slot for RTA. To optimize the maximum output of radiation at 2450 MHz, we simulated the antenna using Electromagnetic simulation tools Maxwell program and analyzed the return loss and the electric field $E_{tot}$ at the near-field region between the simulation results and measurement results. As a result, we obtained the return loss of -29.786 dB at 2450 MHz when the antenna was placed between two blocks of a pig's liver, and the measurement results agreed with the simulation results well. Therefore, this semi-rigid coaxial cable antenna with a ring slot can be used very usefully as the applicator for RTA.r RTA.A.

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Effect of RTA on Leakage Current of $Ta_2O_5$ Thin Films Deposited by PECVD (PECVD법으로 증착된 $Ta_2O_5$박막의 누설전류에 미치는 RTA의 영향)

  • Kim, Jin-Beom;Lee, Seung-Ho;So, Myeong-Gi
    • Korean Journal of Materials Research
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    • v.4 no.5
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    • pp.550-555
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    • 1994
  • The effects of RTA treatment on the leakage current have been studied for tantalum pentoxide( $Ta_2O_5$) films deposited by PECVD on P-type(100) Si substrate using $TaCl_5$(99.99%) and $N_2O$(99.99%) gaseous mixture. The refractive index increased with increasing the deposition temperature and the maximum deposition rate was obtained at $500^{\circ}C$. The Ta-0 bond peak intensity of as-deposited $Ta_2O_5$ increased with increasing the deposition temperature through FT-IR analysis and the leakage current value was decreased with increasing the deposition temperature. The small leakage current value obtained after RTA treatment of as-deposited $Ta_2O_5$ was found to be due to the reduction of 0-deficient structure in the film. The increases of the oxygen coacentration and the Ta-0 bond peak intensity in the film after RTA treatment were measured by AES and FT-IR analyses.

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Optically Transparent ITO Film and the Fabrication of Plasma Signboard (투명 전극 ITO 박막의 열처리 영향과 플라즈마 응용 표시소자 제작에 관한 연구)

  • Jo, Young Je;Kim, Jae-Kwan;Han, Seung-Cheol;Kwak, Joon-Seop;Lee, Ji-Myon
    • Korean Journal of Metals and Materials
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    • v.47 no.1
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    • pp.44-49
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    • 2009
  • Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

Characterizations of Interface-state Density between Top Silicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs

  • Cho, Won-Ju
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.83-88
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    • 2005
  • The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

Improvement of Carrier Mobility on Silicon-Germanium on Insulator MOSFET Devices with a Strained-Si Layer

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.5
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    • pp.399-402
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    • 2007
  • The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

Effect of Rapid Thermal Annealing on Growth and Field Emission Characteristics of Carbon Nanotubes

  • Ko, Sung-Woo;Shin, Hyung-Cheol;Park, Byung-Gook;Lee, Jong-Duk;Jun, Pil-Goo;Kwak, Byung-Hwak;Noh, Hyung-Wook;Uh, Hyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.453-455
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    • 2004
  • The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

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