• 한국진공학회지
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• 제5권4호
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• pp.348-353
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• 1996

CdS/ITO/glass 기판위에 다결정 CdTe 박막을 진공증착법으로 제조한 후 급속열처리하여 열처리 온도와 가스분위기가 CdTe의 박막의 물성과 전지특성에 미치는 효과를 연구하였다. $450^{\circ}C$에서 $550^{\circ}C$까지 공기중 급속열처리한 경우 박막은 EDX 조성분석결과 화학양론비를 유지하였고 표면성분비는 Cd-rich 상태였으나 전처리후 저저항 contact 제조에 유리한 Te-rich 상태로 변화되었다. TEM과 micro-EDX 결과 급속열처리 전후 모두 CdTe는 주상정구조가 관찰되었고 열처리동안 CdTe내로 확산된 S의 양이 로열처리와 비교하여 매우 적음을 알 수 있었다. 급속열처리 온도가 가스분위기 조건 중 공기 중에서 $550^{\circ}C$ 열처리하였을 때 가장 우수한 태양전지효율을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.130.1-130.1
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.453-455
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• 2004

The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.446-447
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• 2007

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

• 한국표면공학회지
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• 제52권3호
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• pp.123-129
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• 2019

With recent demand for the renewable energy resources, we conducted a research on the energy conversion and storage device of supercapacitor. The hybrid graphene-zinc oxide(GZO) electrodes for the supercapacitors (SCs) were fabricated and investigated. To increase the electrical conductivity of the GZO electrode, the rapid thermal annealing(RTA) in $Ar/H_2$(10%) atmosphere was applied and the effect was examined by comparing it with RTA at Ar atmosphere. In Raman spectroscopy, the electrodes annealed at 400? in $Ar/H_2$ atmosphere showed a lower ratio of D/G peak than that of annealed at Ar atmosphere, and had a larger specific capacitance(Sc) in the cyclic voltammetry(CV), and a lower the equivalent series resistance(ESR) in the electrochemical impedance spectroscopy(EIS). The reason seems to come from the better mixing of the graphene and zinc oxide by the RTA in $Ar/H_2$(10%).

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.88-91
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• 2024

The europium doped yttrium oxide (Y₂O₃:Eu³⁺) thin film was formed on a Si substrate by the conventional spin-coating process followed by rapid thermal annealing (RTA) treatment. The spinning profiles such as rotation speed, acceleration and holding times were controlled during the spin-coating process for the best condition of the Y₂O₃:Eu³⁺ thin film. The RTA treatment was conducted for several temperature in order to crystallize the spin coated film. The Y₂O₃:Eu³⁺ thin film presented best performance in the conditions of 4000 rpm, 30 s and 10 s of rotation speed, acceleration time and holding time, respectively, at a fixed RTA temperature of 900 ℃.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.105-109
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• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1576-1579
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• 2005

With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.