• Journal of the Korean Chemical Society
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• v.22 no.3
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• pp.150-157
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• 1978

The rate constants for the hydrolysis of the derivatives of N-(p-nitrophenyl)-benzohydrazonyl azide (p-$CH_3,\;p-CH_3O,\;p-NO_2$, p-Cl, p-Br) have been determined by UV spectrophotometry in 50% dioxane-water at $25^{\cicr}C$ and a rate equation which can be applied over wide pH range was obtained. Below pH 5, the rate of hydrolysis of hydrazonyl azides is accelerated by electron-donating group ($\rho$ = -0.47), whereas at the pH values greater than 7, the $\rho$-value is 0.68. The effect of salt, solvent, substituent and azide ion on the rate of hydrolysis are rationalized in terms of $S_N1$ and $S_N2$ mechanism; below pH 5, the hydrolysis proceed through $S_N1$, however, above pH 7, the hydrolysis is started by the attack of hydroxide ion and in the range of pH 5∼7, these two reactions occur competitively.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.312-318
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• 2001

The mechanical and electrical properties of Cu-Nb filamentary nanocomposite fabricated by the bundling and drawing process were examined. The strength increased gradually with increasing Nb content while the ductility was insensitive to Nb content. The ratio of yield stresses at 293K and 75K are found to be 치ose to that of Young's moduli in various Cu-Nb nanocomposites, suggesting that athermal obstacles primarily control the strength. The fracture morphologies show ductile fractures irrespective of Nb contents. Secondary cracking along the interfaces between subelemental wires was occasionally observed and the frequency of secondary cracking increased with increasing Nb content. The conductivity and the resistivity ratio decreased with increasing Nb content. The decrease of the conductivity and the resistivity ratio(${\rho}_{293k}$/$\{rho}_{75k}$) can be explained by the increasing contribution of interface scattering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• International Journal of Highway Engineering
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• v.12 no.2
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• pp.43-49
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• 2010

This study deals with the traffic accident of the Cheongju arterial link sections. The purpose of the study is to develop the traffic accident model. In pursuing the above, this study gives particular attentions to developing the ZAM(zero-altered model) model using the accident data of arterial roads devided by 322 small link sections. The main results analyzed by ZIP(zero inflated Poisson model) and ZINB(zero inflated negative binomial model) which are the methods of ZAM, are as follows. First, the evaluation of various developed models by the Vuong statistic and t statistic for overdispersion parameter ${\alpha}$ shows that ZINB is analyzed to be optimal among Poisson, NB, ZIP(zero-inflated Poisson) and ZINB regression models. Second, ZINB is evaluated to be statistically significant in view of t, ${\rho}$ and ${\rho}^2$ (0.63) values compared to other models. Finally, the accident factors of ZINB models are developed to be the traffic volume(ADT), number of entry/exit and length of median. The traffic volume(ADT) and the number of entry/exit are evaluated to be the '+' factors and the length of median to be '-' factor of the accident.

• Progress in Superconductivity
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• v.7 no.2
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• pp.103-108
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• 2006

We have measured the Hall resistivity (${\rho}_{xy}$) and the longitudinal resistivity (${\rho}_{xy}$) on superconducting $MgB_2$ thin films in extended fields up to 18 T. We found a universal scaling behavior between the Hall resistivity and the longitudinal resistivity, which is independent of the temperature and the magnetic field. At a wide magnetic field region from 1 to 18T, a universal power law of ${\beta}=2.0{\pm}0.1$ in a scaling relation, ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$, was observed in c-axis-oriented $MgB_2$ thin films. These results can be well interpreted by using recent models.

• Journal of the Korean Society of Radiology
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• v.9 no.6
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• pp.375-379
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• 2015

The purpose of this study is to determine the effective energy of a polyenegetic X-ray beam. The half value layer(HVL) of aluminum for 80 kVp X-ray beam was measured by using optically stimulated luminescent nanoDot dosimeters(OSLnDs). The linear attenuation coefficient(${\mu}$) was calculated using the measured HVL. And the mass attenuation coefficient(${\mu}/{\rho}$) was obtained by dividing the linear attenuation coefficient by the density(${\rho}$) of aluminum. The effective energy($E_{eff}$) of the obtained mass attenuation coefficient was determined using data of the X-ray mass attenuation coefficients for photon energies of aluminum given by National Institute of Standards and Technology(NIST). As a result, the HVL value is 2.262 mmAl. The ${\mu}$ value is $3.06cm^{-1}$. The ${\mu}/{\rho}$ value is $1.114cm^2/g$. And the $E_{eff}$ value was determined at 29.79 keV.

• Biomolecules & Therapeutics
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• v.26 no.2
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• pp.139-145
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• 2018

The present study was undertaken to investigate the influence of hypothermia on endothelium-independent vascular smooth muscle contractility and to determine the mechanism underlying the relaxation. Denuded aortic rings from male rats were used and isometric contractions were recorded and combined with molecular experiments. Hypothermia significantly inhibited fluoride-, thromboxane $A_{2-}$, phenylephrine-, and phorbol ester-induced vascular contractions regardless of endothelial nitric oxide synthesis, suggesting that another pathway had a direct effect on vascular smooth muscle. Hypothermia significantly inhibited the fluoride-induced increase in pMYPT1 level and phorbol ester-induced increase in pERK1/2 level, suggesting inhibition of Rho-kinase and MEK activity and subsequent phosphorylation of MYPT1 and ERK1/2. These results suggest that the relaxing effect of moderate hypothermia on agonist-induced vascular contraction regardless of endothelial function involves inhibition of Rho-kinase and MEK activities.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.157-168
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• 1999

In this paper the new channel allocation method which is important in designing mobile radio system, is proposed. If the channel is allocated by time-frequency-code sliced and using DAMA scheduler, the blocking probability is lower than TA channel allocation method. With traffic load $\rho$=0.8 and 2% of blocking probability, TFS method can allocate 36 slices compared to 11 slices in TA method. At traffic load $\rho$=0.9 and 1% of blocking probability, the maximum available slices are 13 in TA method, but in TFS method 40 slices are allocated to user, so TFS method is better frequency availability by 3.75 times than TA method. TFS method could be suitable for system planning to multirate communication users.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.458-458
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• 2013

We investigated a study on the thermal degradation of boron doped zinc-oxide (BZO) layer which used as a transparent conducting layer on the Cu (In1-xGax) Se2 (CIGS) based thin film solar cells. Devices were annealed under the temperature of $100^{\circ}C$ or 100 hours and then Hall measurement was carried out to characterize the parameters of mobility (${\mu}Hall$), resistivity (${\rho}$), conductivity (${\sigma}$) and sheet resistance (Rsh). The initial values of ${\mu}Hall$, ${\rho}$, ${\sigma}$ and Rsh were $29.3cm^2$/$V{\cdot}s$, $2.1{\times}10^{-3}{\Omega}{\cdot}cm$, $476.4{\Omega}^{-1}{\cdot}cm^{-1}$ and $19.1{\Omega}$/${\Box}$ respectively. After the annealing process, the values were $4.5cm^2$/$V{\cdot}s$, $12.8{\times}10^{-3}{\Omega}{\cdot}cm$, $77.9{\Omega}^{-1}{\cdot}cm^{-1}$ and $116.6{\Omega}$/${\Box}$ respectively. We observed that ${\mu}Hall$ and ${\sigma}$ were decreased, and ${\rho}$ and Rsh were increased. In this study, BZO layer plays an important role of conducting path for electrons generated by incident light onthe CIGS absorption layer. Therefore, the degradation of BZO layer characterized by the parameters of ${\mu}Hall$, ${\rho}$, ${\sigma}$ and Rsh, affect to the cell efficiency.