Mixed-state Hall effect of $MgB_2$ thin films

$MgB_2$박막의 혼합상태에서의 홀 효과

  • Kim, Bo-Yeon (Department of Physics, Pukyong National University) ;
  • Jung, Soon-Gil (Department of Physics, Pukyong National University) ;
  • Moon, Kyeong-Hee (Department of Physics, Pukyong National University) ;
  • Kang, W.N. (Department of Physics, Pukyong National University) ;
  • Choi, Eun-Mi (National Creative Research Initiative Center for Superconductivity, Department of Physics, Pohang University of Science and Technology) ;
  • Kim, Heon-Jung (National Creative Research Initiative Center for Superconductivity, Department of Physics, Pohang University of Science and Technology) ;
  • Lee, Sung-Ik (National Creative Research Initiative Center for Superconductivity, Department of Physics, Pohang University of Science and Technology) ;
  • Kim, Hyeong-Jin (National Creative Research Initiative Center for Semiconductor Nanorods, Department of Materials Science and Engineering, Pohang University of Science and Technology)
  • Published : 2006.04.01

Abstract

We have measured the Hall resistivity (${\rho}_{xy}$) and the longitudinal resistivity (${\rho}_{xy}$) on superconducting $MgB_2$ thin films in extended fields up to 18 T. We found a universal scaling behavior between the Hall resistivity and the longitudinal resistivity, which is independent of the temperature and the magnetic field. At a wide magnetic field region from 1 to 18T, a universal power law of ${\beta}=2.0{\pm}0.1$ in a scaling relation, ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$, was observed in c-axis-oriented $MgB_2$ thin films. These results can be well interpreted by using recent models.

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