• Title/Summary/Keyword: RFIC

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Analysis of Coplaner $LiNBO_3$ Waveguide Structures Applicable Electrooptic Modulator with FDTD method

  • Lee, Byung-Je;Byun, Joon-Ho;Kim, Nam-Young;Kim, Jong-Heon;Lee, Jong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.7
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    • pp.1211-1217
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    • 2000
  • The three-dimensional finite-difference time-domain (FDTD) method and the two-dimensional quasi-static formulation have been used to calculate the characteristic impedance and the microwave effective index of coplanar waveguide structures on Lithium Niobate ($LiNBO_3$) single crystal substrates with a yttria-stabilized zirconia (YSZ) or $SiO_2$ buffer layer. The results shown can be a good source to predict the modulator characteristics. The effects of the thin buffer layer and anisotropy of the $LiNBO_3$ crystal (x-cut and z-cut) are discussed. The comparison between the FDTD and quasi-static results shows good agreement. In this paper, the efficient modeling technique of the FDTD method for the coplanar waveguide (CPW) structures based on an anisotropic substrate with a thin buffer layer is developed.

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Analysis of Effective Gate resistance characteristics in Nano-scale MOSFET for RFIC (RFIC를 위한 Nano-scale MOSFET의 Effective gate resistance 특성 분석)

  • 윤형선;임수;안정호;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.1-6
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    • 2004
  • Effective gate resistance, extracted by direct extraction method, is analyzed among various gate length, in nanoscale MOSFET for RFIC. Extracted effective gate resistance is compared to measured data and verified with simplified model. Extracted parameters are accurate to 10GHz. In the same process technology effect has a different kind of gate voltage dependency and frequency dependency compared with general effective gate resistance. Particularly, the characteristic of effective gate resistance before and after threshold voltage is noticeable. When gate voltage is about threshold voltage, effective gate resistance is abnormally high. This characteristic will be an important reference for RF MOSFET modeling using direct extraction method.

SOP Package Modeling for RFIC (SOP RFIC 패키지 모델링)

  • 이동훈;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.11
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    • pp.18-28
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    • 1999
  • A new equivalent circuit model of package (SOP, Small Outline Package) is presented for designing radio frequency integrated circuits (RFIC). In the RF region, the paddle of a package does not work as an ideal ground. Further parasitics due to both coupling and loss have a substantial effect on MMIC. The equivalent circuit model and parameter extraction methodology for the electrical characteristics of the package are described by illustrating the SOP type packages. The accuracy of the model is evaluated by comparing the s-parameters of the commercial full-wave solver and those of HSPICE simulation with the circuit model. The proposed model shows an excellent agreement with full-wave analysis up to about 8GHz.

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Ku-Band Sub-Harmonically Pumped Single Balanced Resistive Mixers with a Low Pass Filter Using Photonic Band Gap

  • Kim, Jae-Hyuk;Park, Hyun-Joo;Lee, Jong-Chul;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.4
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    • pp.599-609
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    • 2000
  • In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

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A Novel Technique to Miniaturize Microstrip Antennas with a Locally Non-Homogeneous Substrate Configuration

  • Lee, Byung-Je;Kim, Jong-Heon;Lee, Jong-Chul;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.8
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    • pp.1355-1362
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    • 2000
  • Microstrip antennas are attractive for many applications because of their compact size, low profile, and light weight. Recently, the demand for the miniaturization of the personal communication equipment has been increasing along with the proliferation of personal communication systems. Thus, the development of small antenna has been highly demanded. In this paper, a new technique to reduce the overall dimension of a microstrip antenna with a locally non-homogeneous substrate configuration is proposed. The miniaturized microstrip antenna for a repeater system in a mobile communication cellular band(824~894 MHz) is designed with the proposed technique, and commercialized with low cost, light weight, and small size. Comparison between simulations, based on Agilent Technologies HFSS software, and measurements are provided. The proposed method will be more attractive for a light-weight, small-size, and low-cost microstrip array design. This paper also presents the bandwidth improvement technique for under-coupled microstrip patch antenna with a tuning stub.

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An Integrated Si BiCMOS RF Transceiver for 900 MHz GSM Digital Handset Application (I) : RF Receiver Section (900MHz GSM 디지털 단말기용 Si BiCMOS RF송수신 IC개발 (I) : RF수신단)

  • Park, In-Shig;Lee, Kyu-Bok;Kim, Jong-Kyu;Kim, Han-Sik
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.35S no.9
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    • pp.9-18
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    • 1998
  • A single RF transceiver chip for an extended GSM handset application was designedm, fabricated and evaluated. A RFIC was fabricated by using silicon BiCMOS process, and then packaged in 80 pin TQFP of $10 {\times} 10 mm^{2}$ in size. As a result, it was achieved guite reasonable integraty and good RF performance at the operation voltage of 3.3V. This paper describes development results of RF receiver section of the RFIC, which includes LNA, down conversion mixer, AGC, switched capacitor filter and down sampling mixer. The test results show that RF receiver section is well operated within frequency range of 925 ~960 MHz, which is defined on the extended GSM specification (E-GSM). The receiver section also reveals moderate power consumption of 67 mA and minimum detectable signal of -105 dBm.

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A FG-CPW Single Balanced Diode Mixer for C-Band Application (C-Band 용 FG-CPW 단일 평형 다이오드 혼합기)

  • Bae, Joung-Sun;Lee, Jong-Chul;Kim, Jong-Heon;Lee, Byung-Je;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.339-345
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    • 2001
  • In this paper, FG-CPW (Finite-Ground Coplanar Wave-Guide) balanced diode mixer is presented. Frequency bandwidth is selected for a C-band, which is 5.72~5.82 GHz for RF, 5.58~5.68 GHz for LO, and 140 MHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with CPW structure is used far good conversion loss and unwanted harmonics suppression. When LO signal with the power of 4 dBm at 5.635 GHz is injected, a conversion loss of 6.2 dB is obtained for the mixer. Also, the LO to RF and LO to IF isolation of 30 dB and 40 dB are obtained, respectively. This mixer can be used in the area on wireless LAN application.

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A GaAs Micromachined Millimeter-wave Lowpass Filter Using Microstrip Stepped-Impedance Hairpin Resonator

  • Cho Ju-Hyun;Yun Tae-Soon;Baek Tae-Jong;Ko Baek-Seok;Shin Dong-Hoon;Lee Jong-Chul
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.3 no.2 s.5
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    • pp.85-93
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    • 2004
  • In this paper, microstrip stepped-impedance hairpin resonator (SIR) lowpass filter f.PF) by surface rnicromachining on GaAs substrate is sugsested. This filter has the advantages of compact side, easy fabrication, and sharp cutoff frequency response. The new SIR LPF shows the 3 dB passband of dc to 33 GHz, the insertion loss of 0.82 dB, and the return loss of better than 17 dB up to 25.57 GHz. This filter is useful for many microwave system applications.

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Compact Wilkinson Power Combiner Design and Electro Magnetic Simulation Using IPD Technology (IPD 기술을 이용한 Wilkinson 전력결합기 설계 및 전기장 시뮬레이션)

  • Cho, Sung-Jin;Wang, Cong;Kim, Nam-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.46-47
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    • 2009
  • In this paper, a power combiner using IPD process for SK Telecom 3-Generation (2.13 ~ 2.15 GHz) application. The Integrated Passive Device (IPD) Wilkinson power Combiner shows compact size and high performance. It is simulated by 3D Electro Magnetic (EM) simulation because of more accurate measurement result wire-bonding effects. This combiner exhibit size of $1.2mm^2$ the insertion loss of 3.6 dB, and the return loss of 10.1 dB, and isolation of more than -7.7 dB.

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Design of a High Performance Patch Antenna for GPS Communication Systems

  • Hamedi-Hagh, Sotoudeh;Chung, Joseph;Oh, Soo-Seok;Jo, Ju-Ung;Park, Noh-Joon;Park, Dae-Hee
    • Journal of Electrical Engineering and Technology
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    • v.4 no.2
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    • pp.282-286
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    • 2009
  • This paper presents the design of a patch antenna for GPS portable devices. The antenna is designed to operate at Ll band on an FR4 PCB with a thickness of 1.6mm, a dielectric constant of 3.8 and two metallization layers. The antenna has a dimension of 49mm${\times}$36mm and operates at 1.5754GHz with a return loss of -36dB and a measured bandwidth of 250MHz.