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Analysis of Effective Gate resistance characteristics in Nano-scale MOSFET for RFIC  

윤형선 (동부아남반도체)
임수 (동부아남반도체)
안정호 (충남대학교 전자공학과)
이희덕 (충남대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.11, 2004 , pp. 1-6 More about this Journal
Abstract
Effective gate resistance, extracted by direct extraction method, is analyzed among various gate length, in nanoscale MOSFET for RFIC. Extracted effective gate resistance is compared to measured data and verified with simplified model. Extracted parameters are accurate to 10GHz. In the same process technology effect has a different kind of gate voltage dependency and frequency dependency compared with general effective gate resistance. Particularly, the characteristic of effective gate resistance before and after threshold voltage is noticeable. When gate voltage is about threshold voltage, effective gate resistance is abnormally high. This characteristic will be an important reference for RF MOSFET modeling using direct extraction method.
Keywords
Effective gate resistance; Direct extraction Method; sub 100nm CMOS; Nano CMOS; RF MOSFET;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 D. Lovelace, J. Costa, and N. Camilleri, 'Extracing small signal model parameters of silicon MOSFET transistors', IEEE, MTT S Digest, Vol.2, p. 865, 1994   DOI
2 I. Kwon, M. Je, K Lee, and H. Shin, 'A Simple and Analytical Parameter Extraction Method of a Microwave MOSFET', IEEE, Trans. MTT, Vol. 50, p. 1503, 2002   DOI   ScienceOn
3 C. Enz, 'An MOS Transistor Model for RF lC Design Valid in All regions of Operation', IEEE, Trans. MTT, Vol.50, p. 342, 2002   DOI   ScienceOn
4 W. C. Elmore, 'The transient response of damped linear networks with particular regard to wideband amplifiers', J. Appl. Phys., Vol. 19, p. 55, 1948   DOI
5 L. T. Pillage and R. A. Rohrer, 'Asymptotic waveform evaluation for timing analysis' , IEEE Trans. Computer Aided Design, Vol. 9, p. 352, 1990   DOI   ScienceOn
6 S. Lee, C. Kim and H. Yu, 'A small signal RF model and its parameter extraction for substrate effects in RF MOSFETs', IEEE, Trans. Elect. Devices, Vol.48, p. 1374, 2001   DOI   ScienceOn
7 김용구, 지희환, 박성형, 이희덕, 'Capacitance Voltage 방법을 이용한 MOSFET의 유효 채널 길이 추출', 2003년도 대한전자공학회 하계학술대회 논문집, Vol. 26, p. 679, 2003   과학기술학회마을
8 S. F. Tin, A.A. Osman, K. Mayaram, and C. Hu, 'A simple subcircuit extension of the BSIM3v3 model for CMOS RF design', IEEE JSSC, Vol.35, p. 612, 2000   DOI   ScienceOn
9 P. H. Woerlee, M. J. Knitel, R van Langevelde, Dirk B. M. Klaassen, Luuk F. Tiemeijer, A J. Scholten, and A T. A. Zegers van Duijnhoven, 'RF CMOS Performance Trends', IEEE, Trans. Elect. Devices, Vol.48, p. 1776, 2001   DOI   ScienceOn
10 안정호, 윤형선, 임수, 이희덕, '고주파영역에서 Nano Scale MOSFET의 정확한 fMAX 추출', 2003년도 대한전자공학회, 추계학술대회 논문집, Vol. 26, p. 56, 2003
11 R. Torres Torres, R.S. Murphy Arteaga, and S. Decoutere, 'MOSFET gate resistance determination', IEEE Electronics Letters , Vol. 39, p. 248, 2003   DOI   ScienceOn
12 H. Iwai, 'CMOS Technology for RF Application', IEEE Microelectronics, 2000 22nd International Conference on , Vol. 1, p. 27, 2000   DOI
13 S. Song, J. H. Yi, W. S. Kim, J. S. Lee, K. Fujihara, H. K. Kang, J. T. Moon, and M. Y. Lee, 'CMOS Device Scaling Beyond 100nm', IEEE, Electron Devices Meeting, 10 13 Dec., 2000   DOI