• Title/Summary/Keyword: RF-type

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Nanoscale Microstructure and Magnetic Transport in AIN/Co/AIN/Co… Discontinuous Multilayers

  • Yang, C.J.;Zhang, M.;Zhang, Z.D.;Han, J.S.
    • Journal of Magnetics
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    • v.8 no.2
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    • pp.98-102
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    • 2003
  • Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

A Study of design Asyn communication eletronic cash system using PSTN / leased line (PSTN/전용선을 이용한 ATM 통신방식의 전자지불 시스템 설계연구)

  • Kim, W.Y.;Hong, J.H.;Jung, J.H.;Song, G.Y.;Song, W.J.;Jung, Y.H.;Kim, H.J.
    • Proceedings of the KIEE Conference
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    • 2002.07d
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    • pp.2353-2356
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    • 2002
  • The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of projects on electronic cash system. Tranport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver's vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase 15$\sim$40% pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.

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A Study on the Glow Discharge Characteristics of MgO thin film prepared by Unbalanced Magnetron Sputtering (불평형 마그네트론 스파터링에 의해 형성된 MgO 박막의 글로우 방전특성에 관한 연구)

  • Kim, Young-Kee;Park, Jung-Tae;Ko, Kwang-Sic;Kim, Gyu-Seup;Park, Chung-Hoo;Cho, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2236-2238
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    • 1999
  • This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

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VCO fabrication using Microstrip Line operating at the UHF frequency band (UHF대역에서 동작하는 마이크로스트립라인을 이용한 VCO 제작)

  • Rhie, Dong Hee;Jung, Jin-Hwee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.55-58
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    • 2001
  • In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T=1.5V$, while the simulated value was 1.0GHz at $V_T=1.5V$. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

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VCO fabrication using Microstrip Line operating at the UHF frequency band (UHF대역에서 동작하는 마이크로스트립라인을 이용한 VCO 제작)

  • Rhie, Dong-Hee;Jung, Jin-Hwee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.153-156
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    • 2001
  • In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T$=1.5V, while the simulated value was 1.0GHz at $V_T$=1.5V. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

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Fabrication and Electrical Properties of GaN M IS Structures using Aluminum Oxide Thin Film (산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성)

  • Yun, Hyeong-Seon;Jeong, Sang-Hyun;Kwak, No-Won;Kim, Ka-Lam;Lee, Woo-Seok;Kim, Kwang-Ho;Seo, Ju-Ok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.329-334
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    • 2008
  • Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

Predictive Models for Sasang Constitution Types Using Genetic Factors (유전지표를 활용한 사상체질 분류모델)

  • Ban, Hyo-Jeong;Lee, Siwoo;Jin, Hee-Jeong
    • Journal of Sasang Constitutional Medicine
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    • v.32 no.2
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    • pp.10-21
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    • 2020
  • Objectives Genome-wide association studies(GWAS) is a useful method to identify genetic associations for various phenotypes. The purpose of this study was to develop predictive models for Sasang constitution types using genetic factors. Methods The genotypes of the 1,999 subjects was performed using Axiom Precision Medicine Research Array (PMRA) by Life Technologies. All participants were prescribed Sasang Constitution-specific herbal remedies for the treatment, and showed improvement of original symptoms as confirmed by Korean medicine doctor. The genotypes were imputed by using the IMPUTE program. Association analysis was conducted using a logistic regression model to discover Single Nucleotide Polymorphism (SNP), adjusting for age, sex, and BMI. Results & Conclusions We developed models to predict Korean medicine constitution types using identified genectic factors and sex, age, BMI using Random Forest (RF), Support Vector Machine (SVM), and Neural Network (NN). Each maximum Area Under the Curve (AUC) of Teaeum, Soeum, Soyang is 0.894, 0.868, 0.767, respectively. Each AUC of the models increased by 6~17% more than that of models except for genetic factors. By developing the predictive models, we confirmed usefulness of genetic factors related with types. It demonstrates a mechanism for more accurate prediction through genetic factors related with type.

Atmospheric Pressure Plasma를 이용한 Oxide Thin Film Transistor의 특성 개선 연구

  • Mun, Mu-Gyeom;Kim, Ga-Yeong;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.582-582
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    • 2013
  • Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

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Four New Darnmarane-Glycosidesl Ginsenosides $Rg_5, Rh_4, Rs_3, AND Ff_2$, from Korean Red Ginsengs the Root off]unarm ginseng C. A. Meyer

  • Jong Dae Park;Nam
    • Proceedings of the Ginseng society Conference
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    • 1998.06a
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    • pp.115-126
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    • 1998
  • Four new dammarnae-glycosides named ginsenosides Rgs, Rh4, RsB and Rf2 have been isolated 1'rom Korean red ginseng, the root of Panax ginseng C. A. Meyer (Araliaceae) and their chemical structures have been elucidated by chemical and spectroscopic methods, including'H-'H COSY, HMQC, HMBC, NOESY, as 3-0- [$\beta$-D-glucopyranosyl(1 ~2)-$\beta$-D-glucopyranosyl] dammar-20(22) , B4-diene-3P,12P-diol (ginsenoside Rgs),6-0-$\beta$-D-glucopyranosyl-dammar-20(22),24-diene-3P,6P, 12P-triol (ginsenoside Rh4),3-0- [6" -0-acetyl-D-glucopyranosyl(1 ~2)--D-glucopyranosyl] 20(5)- protopanaxadiol (ginsenoside Rs3) and 6-0- [u-L-rhamno-pyranosyl(1 ~2)-$\beta$-D-glucopyranosyl] dammarane -3$\beta$, 6a, 12 $\beta$, 20(R),25-pentol(ginsenoslde Rfa). The absolute stereo structure of a double bond at C-20(22) was determined as entgegen type by applying NOESY.OESY.

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Improving the Linearity of CMOS Low Noise Amplifier Using Multiple Gated Transistors (Multiple Gated Transistors의 Derivative Superposition Method를 이용한 CMOS Low Noise Amplifier의 선형성 개선)

  • Yang, Jin-Ho;Kim, Hui-Jung;Park, Chang-Joon;Choi, Jin-Sung;Yoon, Je-Hyung;Kim, Bum-Man
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.505-506
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    • 2006
  • In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

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