Browse > Article
http://dx.doi.org/10.4313/JKEM.2008.21.4.329

Fabrication and Electrical Properties of GaN M IS Structures using Aluminum Oxide Thin Film  

Yun, Hyeong-Seon (청주대학교 전자공학과)
Jeong, Sang-Hyun (청주대학교 전자공학과)
Kwak, No-Won (청주대학교 전자공학과)
Kim, Ka-Lam (청주대학교 전자공학과)
Lee, Woo-Seok (청주대학교 전자공학과)
Kim, Kwang-Ho (청주대학교 전자공학과)
Seo, Ju-Ok ((주) 이츠웰 기술연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.4, 2008 , pp. 329-334 More about this Journal
Abstract
Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.
Keywords
Aluminum oxide; MIS; GaN; Sputtering; Interface trap density;
Citations & Related Records
연도 인용수 순위
  • Reference
1 T. P. Chow and R. Tyagi, "Wide bandgap compound semiconductors for superior high-voltage unipolar power devices", IEEE Trans. Electron Devices, Vol. 41, Issue. 8, p. 1481, 1994   DOI   ScienceOn
2 R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo, "AlGaN/GaN metal- oxide-semiconductor high electron mobility transistors using $Sc_2O_3$ as the gate oxide and surface passivation", Appl. Phys. Lett., Vol. 82, p. 2530, 2003   DOI   ScienceOn
3 M. Diale, F. D. Auret, N. G. van der Berg, R. Q. Odendaal, and W. D. Roos, "Analysis of GaN cleaning procedures", Appl. Surf. Sci., No. 246, p. 279, 2005
4 오상도, 범진욱, 백홍구, "GaN계 전자소자의 연구동향", 전기전자재료, 14권, 11호, p. 11, 2001
5 M. Asif Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur, "AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor", IEEE Electron Devices Lett., Vol. 21, Issue. 8, p. 63, 2000   DOI   ScienceOn
6 M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M. S. Shur, "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates", Appl. Phys. Lett., Vol. 77, Issue. 9, p. 1339, 2000   DOI   ScienceOn
7 G. Simin, A. Koudymov, H. Fatima, J. Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, and M. S. Shur, "$SiO_2$/AlGaN/InGaN/GaN MOSDHFETs", IEEE Electron Devices Lett., Vol. 23, Issue. 8, p. 458, 2002   DOI   ScienceOn
8 P. D. Ye, B. Yang, K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang, "GaN metal-oxide-semiconductor high-electronmobility- transistor with atomic layer deposited $Al_2O_3$ as gate dielectric", Appl. Phys. Lett., Vol. 86, p. 063501-1, 2005   DOI   ScienceOn
9 X. Hu, A. Koudymov, G. Simon, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, and R. Gaska, "$Si_3N_4$/AlGaN/GaN-metal-insulatorsemiconductor heterostructure field-effect transistors", Appl. Phys. Lett., Vol. 79, p. 2832, 2000
10 Simin G., Hu X., Ilinskaya N., Zhang J., Tarakji A., Kumar A., Asif Khan M., Shur M. S., and Gaska R., "Large periphery highpower AlGa/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging", IEEE Electron Devices Lett., Vol. 22, Issue. 2, p. 53, 2002
11 A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, and M. Asif Khan, "Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs", IEEE Electron Devices Lett., Vol. 23, Issue. 8, p. 449, 2002   DOI   ScienceOn
12 T. Hashizume, S. Ootomo, and H. Hasegawa, "Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin $Al_2O_3$ dielectric", Appl. Phys. Lett., Vol. 83, Issue. 13, p. 2952, 2003   DOI   ScienceOn
13 김용성, "질화 알루미늄 박막을 게이트 절연막 으로 이용한 SiC MIS device의 제작 및 특성 에 연구", 청주대학교 박사학위논문, p. 37, 2006
14 J. W. Johnson, B. Luo, F. Ren, B. P. Gila, W. Krishnamoorthy, C. R. Abernathy, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, and C. C. Chuo, "$Gd_2O_3$/GaN metal-oxidesemiconductor field-effect transistor", Appl. Phys. Lett., Vol. 77, p. 3230, 2000   DOI   ScienceOn