• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.63-69
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• 2000

The high-$T_c$ Superconducting (HTS) antenna which consists of "H" type resonator has the benefits for the miniaturization of antenna in comparison with the microstrip antenna of the similar dimension. To fabricate the "H" type antenna, HTS $YBa_2Cu_3O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. Standard etching processes were performed for the patterning of the "H" type antenna. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between $50{\Omega}$ feed line and HTS radiating patch. The diverse experimental results were reported in terms of the resonant frequency, the return loss and the characteristics impedance. The "H" type superconducting antenna showed the performance of 1.36 in SWR, 24% in efficiency, and 14.6 dB in the return loss superior of the normal conducting counterpart.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.39 no.6
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• pp.351-361
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• 2021

The seriousness of fire is rising because fire causes enormous damage to property and human life. Therefore, this study aims to predict various risk factors affecting fire by fire type. The predictive analysis of fire factors was carried out targeting Gyeonggi-do, which has the highest number of fires in the country. For the analysis, using machine learning methods SVM (Support Vector Machine), RF (Random Forest), GBRT (Gradient Boosted Regression Tree) the accuracy of each model was presented with a high fit model through MAE (Mean Absolute Error) and RMSE (Root Mean Squared Error), and based on this, predictive analysis of fire factors in Gyeonggi-do was conducted. In addition, using machine learning methods such as SVM (Support Vector Machine), RF (Random Forest), and GBRT (Gradient Boosted Regression Tree), the accuracy of each model was presented with a high-fit model through MAE and RMSE. Predictive analysis of occurrence factors was achieved. Based on this, as a result of comparative analysis of three machine learning methods, the RF method showed a MAE = 1.765 and RMSE = 1.876, as well as the MAE and RMSE verification and test data were very similar with a difference between MAE = 0.046 and RMSE = 0.04 showing the best predictive results. The results of this study are expected to be used as useful data for fire safety management allowing decision makers to identify the sequence of dangers related to the factors affecting the occurrence of fire.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.129-132
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• 2000

In this paper, a 1.8㎓ low noise amplifier was designed and simulated using 0.2$\mu\textrm{m}$ Si CMOS process. Noise characteristics and s parameters were extracted for the 300$\mu\textrm{m}$ gate width and 0.25$\mu\textrm{m}$ gate length NMOS transistors. For high available power gain, each stage was designed cascode type. It revealed available power gain of 23.5dB, noise figure of 2.0dB, power consumption of 15㎽ at 2.5V. It was shown that designed low noise amplifier had good RF performance. Designed Si CMOS LNA is expected to be used for RF front-end in transceiver.

• Journal of Korea Society of Industrial Information Systems
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• v.7 no.5
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• pp.147-153
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• 2002

In this paper, a substrate network model to be used with BSIM3 MOSFET model for submicron MOSFETs in giga hertz frequencies and its direct parameter extraction with physically meaningful values are proposed. The proposed substrate network model includes a conventional resistance and single inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed without any optimization process. The proposed modeling technique has been applied to various-sized MOS transistors. The substrate model has been validated for frequency up to 300Hz.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.415-418
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• 2007

This paper presents the design and analysis of LNA-Mixer for 2.45GHz RFID reader. The LNA is implemented by PCSNIM method for low power consumption. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique, and the resonating technique for the tail capacitance. The connection between the two designed circuits is made by active balun. This LNA-Mixer has about 35dB for -40dBm input RF power, LO power is 0dBm and RF frequency is 2.45 GHz and IIP3 is -4dBm. The layout of LNA-Mixer for one-chip design in a $0.18-{\mu}m$ TSMC process has 2.6mm ${\times}$ 1.3mm size.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.269-272
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• 2007

In order to expand cell coverage, increase system capacity, and offer various multimedia service with high throughput in indoor environment, WiBro Access Point(AP) is developed. Home AP is IFA/Omni type and has stack-up structure of channel card and RF board. SOHO AP is designed to support up to 2FA and has remote RF(RRF) structure using UTP method. Inter-operational test with mobile terminal were completed for 3 terminals using web browsing service simultaneously. The performance test results of WiBro AP are as follows: RCE(EVM) value is -34.431 dB for 64-QAM and throughput is up to 6.79 Mbps(DL) and 1.1 Mbps(UL) with 2.5m Line-of-Sight(LOS) condition.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.28-34
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• 2003

In this paper, a predistortion linearizer using series diode is proposed for linearizing the power amplifier in microwave radio systems. The power amplifier should be operated near saturation region to achieve high efficiency. But at this region, amplitude and phase distortions of the amplifier remarkably increase with the increase of input power and cause a significant adjacent channel interference. The linearizer is composed of a series diode with a parallel capacitor, which provides positive amplitude and negative phase deviations with the increasing input power. This type of linearizer using the nonlinearity of diode has improved the C/I(Carrier to Intermodulation Distortion) ratio well. By applying this linearizer to two-tone 880MHz power amplifier, adjacent channel leakage power is improved up to 5dBm.

• The Journal of the Acoustical Society of Korea
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• v.21 no.2
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• pp.102-109
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• 2002

This paper proposes a new design algorithm to optimize the withdrawal weighted SAW ladder devices, Withdrawal weighting on SAW resonators gives enhanced bandwidth and transition band characteristics, so an optimization algorithm was developed for ladder type SAW filters. To illustrate the validity of the technique, this method was applied to the design of RF band CDMA TX SAW filters, and the design results were confirmed to show good agreement with experimental performance.