• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 D
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• pp.2353-2356
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• 2002

The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of projects on electronic cash system. Tranport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver's vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase 15$\sim$40% pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2236-2238
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• 1999

This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.55-58
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T=1.5V$, while the simulated value was 1.0GHz at $V_T=1.5V$. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.153-156
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T$=1.5V, while the simulated value was 1.0GHz at $V_T$=1.5V. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 사상체질의학회지
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• 제32권2호
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• pp.10-21
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• 2020

Objectives Genome-wide association studies(GWAS) is a useful method to identify genetic associations for various phenotypes. The purpose of this study was to develop predictive models for Sasang constitution types using genetic factors. Methods The genotypes of the 1,999 subjects was performed using Axiom Precision Medicine Research Array (PMRA) by Life Technologies. All participants were prescribed Sasang Constitution-specific herbal remedies for the treatment, and showed improvement of original symptoms as confirmed by Korean medicine doctor. The genotypes were imputed by using the IMPUTE program. Association analysis was conducted using a logistic regression model to discover Single Nucleotide Polymorphism (SNP), adjusting for age, sex, and BMI. Results & Conclusions We developed models to predict Korean medicine constitution types using identified genectic factors and sex, age, BMI using Random Forest (RF), Support Vector Machine (SVM), and Neural Network (NN). Each maximum Area Under the Curve (AUC) of Teaeum, Soeum, Soyang is 0.894, 0.868, 0.767, respectively. Each AUC of the models increased by 6~17% more than that of models except for genetic factors. By developing the predictive models, we confirmed usefulness of genetic factors related with types. It demonstrates a mechanism for more accurate prediction through genetic factors related with type.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.582-582
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• 2013

Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

• 고려인삼학회:학술대회논문집
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• 고려인삼학회 1998년도 Advances in Ginseng Research - Proceedings of the 7th International Symposium on Ginseng -
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• pp.115-126
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• 1998

Four new dammarnae-glycosides named ginsenosides Rgs, Rh4, RsB and Rf2 have been isolated 1'rom Korean red ginseng, the root of Panax ginseng C. A. Meyer (Araliaceae) and their chemical structures have been elucidated by chemical and spectroscopic methods, including'H-'H COSY, HMQC, HMBC, NOESY, as 3-0- [$\beta$-D-glucopyranosyl(1 ~2)-$\beta$-D-glucopyranosyl] dammar-20(22) , B4-diene-3P,12P-diol (ginsenoside Rgs),6-0-$\beta$-D-glucopyranosyl-dammar-20(22),24-diene-3P,6P, 12P-triol (ginsenoside Rh4),3-0- [6" -0-acetyl-D-glucopyranosyl(1 ~2)--D-glucopyranosyl] 20(5)- protopanaxadiol (ginsenoside Rs3) and 6-0- [u-L-rhamno-pyranosyl(1 ~2)-$\beta$-D-glucopyranosyl] dammarane -3$\beta$, 6a, 12 $\beta$, 20(R),25-pentol(ginsenoslde Rfa). The absolute stereo structure of a double bond at C-20(22) was determined as entgegen type by applying NOESY.OESY.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.505-506
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• 2006

In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

• 한국진공학회지
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• 제10권2호
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• pp.201-206
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• 2001

본 연구에서는 RF 마그네트론 스퍼터링 방법을 이용하여 저탄소강 기판에 증착시킨 Fe-Ni계 합금 박막의 집합조직 발달을 조사하였다. Fe-Ni 합금 조성은 산업적 응용을 고려하여 인바합금(Invar alloy, Fe-36.5 wt%Ni)과 퍼멀로이(Permalloy, Fe-81 wt%Ni) 두 종류로 선택하였고, 증착시간을 변수로 제작하였다. 이들 합금 박막의 집합조직은 박막에서 전형적으로 나타나는 섬유집합조직(fibre texture)의 형태로 발달하였다. 인바합금 박막에서는 증착 초기에 <110>//ND 섬유집합조직이 발달하지만 증착시간이 증가함에따라 <210>//ND 섬유집합조직으로 변화하였다. 퍼멀로이 박막은 증착초기에 <221>//ND+<311>//ND의 혼합 집합조직을 나타내며 증착시간의 증가와 함께 <210>//ND 섬유집합조직으로 변화하였다. 이러한 집합조직의 변화를 박막의 미세조직의 진화와의 연관성이란 측면에서 고찰하였다.