• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.817-823
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• 2011

This paper introduces an efficient voltage multiplier circuit for improved voltage gain and power efficiency of radio frequency identification (RFID) tags. The multiplier is fully integratable and takes advantage of both passive and active circuits to reduce the required input power while yielding the desired DC voltage. A six-stage voltage multiplier and an ultralow power voltage regulator are designed in a 0.13 ${\mu}m$ complementary metal-oxide semiconductor process for 2.45 GHz RFID applications. The minimum required input power for a 1.2 V supply voltage in the case of a 50 ${\Omega}$ antenna is -20.45 dBm. The efficiency is 15.95% for a 1 $M{\Omega}$ load. The regulator consumes 129 nW DC power and maintains the reference voltage in a 1.1% range with $V_{dd}$ varying from 0.8 to 2 V. The power supply noise rejection of the regulator is 42 dB near a 2.45 GHz frequency and performs better than -32 dB from 100 Hz to 10 GHz frequencies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1350-1359
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• 2008

This paper presents a wideband doubly balanced resistive mixer fabricated using $0.5{\mu}m$ GaAs p-HEMT process. Three baluns are employed in the mixer. LO and RF baluns operating over an 8 to 20 GHz range were implemented with Marchand baluns. In order to reduce chip size, the Marchand baluns were realized by the meandering multicoupled line and inductor lines were inserted to compensate for the meandering effect. IF balun was implemented through a DC-coupled differential amplifier. The size of IF balun is $0.3{\times}0.5\;mm^2$ and the measured amplitude and phase unbalances were less than 1 dB and $5^{\circ}$, respectively from DC to 7 GHz. The mixer is $1.7{\times}1.8\;mm^2$ in size, has a conversion loss of 5 to 11 dB, and an output third order intercept(OIP3) of +10 to +15 dBm at 16 dBm LO power for the operating bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.805-808
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• 2011

This paper presents a design of high-efficiency and high-power class E power transmitter. The transmitter is composed of 300 Watt class E power amplifier and AC-DC converter. The AC-DC converter converts 220 V and 60 Hz AC to a 290 V DC. The generated DC voltage is directly applied to a bias of the class E power amplifier. Because the converter does not have DC-DC converter unit, it has very high conversion efficiency of about 98.03 %. To minimize the loss at the output of the power amplifier, high-Q inductor was implemented and deployed to the output resonant circuit. As a result, the 13.56 MHz class E power amplifier has a high power-added efficiency of 84.2 % at the peak output power of 323.6 W. The overall efficiency of class E power transmitter, including the AC-DC converter, is as high as 82.87 %.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.117-123
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• 2002

This paper describes the design for the resistive FET mixer with low If for the 4-Ch DBF(Digital Beam Forming) receiver This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(If) considered in this research are 2.09 GHz, 2.08 CHz and 10 MHz, respectively. This mixer is composed of band pass filter, a low pass filter and a DC bias circuit. Super low noise HJ FET of NE3210S01 is considered in design. The RE input power, LO input power and Vcs are used -10 dBm, 6 dBm and -0.4 V, respectively. In the 4-Ch resistive FET mixer, the measured If and harmonic components of 10 MHe, 20 MHz and 2.087 CHz are about -19.2 dBm, -66 dBm and -48 dBm, respectively The If output power observed at each channel of 10 MHz is about -19.2 dBm and it is higher 28.8 dBm than the maximum harmonic component of 2.087 CHz. Each If output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.944-949
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• 2003

In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.189-193
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• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.9-15
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• 2002

We propose a new transit time device to extend the operating frequency to submillimeter-wave(extreme infrared) ranges by utilizing velocity overshoot effects in the drift region. We name it a velocity overshoot transit time (OVTT) diode. This device adopts fast heterostructure tunneling as injection mechanism and a short drift region to optimize the velocity overshoot effects. To enhance dc-to-RF conversion efficiencym the drift region is designed with a bandgap grading method. Simulation results demonstrate that a VOTT diode can be operated at THz ranges.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1955-1957
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• 2003

This paper presents a novel defected ground structure (DGS) and its application to a microwave oscillator. The presented oscillator is designed so as to use the suggested defected ground structure as a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM calculations and simple circuit analysis method. The implemented 1.07 GHz oscillator exhibits 0 dBm output power with over 15% dc-to-RF power efficiency and -106 dBc/Hz phase noise at 100 kHz offset from carrier.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.303-307
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• 2015

Multilayered films of ITO (In₂O₃:SnO₂ = 9:1)/SiO₂ were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO₂ layer thickness. XRD results revealed that the ITO and TiO₂ films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm² (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO₂ film showed a Voc of 0.697 V, J_sc of 10.596 mA/cm² , FF of 66.423, and calculated power conversion efficiency (η_AM1.5) of 5.259%, which was the maximum value observed in this study.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.397-403
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• 2008

In this paper, the mixer was implemented in the non-radiative dielectric waveguide that is the main component of 60 GHz band radio telecommunications equipment which a demand increases for the purpose of point-to-point communication network. As to the manufacture of the non-radiative dielectric waveguide mixer, it was the implementation of the dielectric line combiner to be most difficult. The thing which that gives shape to the curvature which is the dielectric line determined and the to place in the exact interval thing are easy. For this reason, it was very difficult to make in order to have the regular performance in the case of the mixer having the dielectric line combiner. In this paper, since the dielectric line combiner was replaced with the waveguide directional coupler and the manufacture was possible through a processing it had the characteristic that a combiner is fixed. In result, the productivity of a mixer was innovatively improved. The design frequency of the mixer implemented through this paper RF and LO are $51{\sim}64\;GHz$. IF Is $DC{\sim}\;GHz2$. The down conversion loss toward the RF input of $60{\sim}62\;GHz$ was measured by $10{\pm}1\;dB$ in the condition that LO is 10 dBm, 60 GHz.