• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1364-1366
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• 1997

Planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.933-936
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• 2007

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.508-511
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of 5 ∼ 50 (W) at 13.56 (MHz). The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100 (V) ∼+100 (V). When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30 〔W〕. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF rower for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1123-1126
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar- I line, luminance were investigated. At this time the input parameter for ICP RF plama, Ar gas pressure and RF power were applied in the range of $10{\sim}60m$ Torr, $10{\sim}300W$ respectively.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.98-103
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• 2016

The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1996.11a
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• pp.63-66
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• 1996

Electron temperature and electron density were measured in a radio-frequency(rf) inductively coupled plasma using probe measurements. Measurements were made in an argon discharge for pressures from 10 to 100mTorr and input rf power from 100 to 800W. Spatial distribution Electron temperature and electron density were measured for discharge with same aspect ratio. Electron temperature and Electron density were found to depend on both pressure and power. Electron density was creased with increasing pressure, but peaked in a 70mTorr discharge. Radial distribution of the electron density was peaked in the plasma fringes. These results were compared to a simple model of inductively coupled plasmas.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.124-130
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• 2005

In this paper, we designed a cylindrical type light source having an electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the transformer principle, an electrically equivalent circuit cylindrical type light source was analyzed. According to the parameters of electromagnetic induction, which were diameter of coil with cpO.3$\~$ 1.2mm, number of turns with 4$\~$ 12 turns, distance with 40$\~$ l20mm and RF power with 10$\~$ 150W, the electrical .md optical properties were measured. When the diameter of the coil was cp0.3mm, number of turns was 8 and distance was 40mm, and the maximum brightness of 29,730 cd/m$^{2}$ was shown with RF power l50W. The relationship between electromagnetic induction and plasma discharges was demonstrated using the mode transition from E-mode to H-mode

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.368-375
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• 1999

The Maxwell equation and the transformer equivalent-circuit model are applied to a radio frequency planar inductively coupled plasma. The spatial distribution of the vector potential, the magnetic field, and the electric field are obtained analytically. As a result, the plasma current, the mutual inductance between the coil and the plasma, and the self inductance of plasma are found to increase with increasing skin depth. The spatial distribution of absorbed power has maximum where the antenna coil exists, and has a similar profile to that of the induced electric field. The power transfer efficiency is found to increase with increasing gas pressure before a saturation around p+ 20mTorr, while it shows an increase with the plasma density before a slight decrease around a density of $5\times10^{11}/\textrm{cm}^3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.