• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.1
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• pp.13-22
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• 2001

This paper presents three dimensional structure of RF packages and the improvement effect of its electrical characteristics when implementing RF transceivers. We divided RF modules into several subunits following each subunit function based on the partitioning algorithm which suggests a method of three dimension stacking interconnection, PAA(pad area array) interconnection and stacking of three dimensional RF package structures. 224MHz ITS(Intelligent Transportation System) RF module subdivided into subunits of functional blocks of a receiver(RX), a transmitter(TX), a phase locked loop(PLL) and power(PWR) unit, simultaneously meeting the requirements of impedance characteristic and system stability. Each sub­functional unit has its own frequency region of 224MHz, 21.4MHz, and 450KHz~DC. The signal gain of receiver and transmitter unit showed 18.9㏈, 23.9㏈. PLL and PWR modules also provided stable phase locking, constant voltages which agree with design specifications and maximize their characteristics. The RF module of three dimension stacking structure showed $48cm^3$, 76.9％ reduction in volume and 4.8cm, 28.4％ in net length, 41.8$^{\circ}C$, 37% in maximum operating temperature, respectively. We have found that three dimensional PAA package structure is able to produce high speed, high density, low power characteristics and to improve its functional characteristics by subdividing RF modules according to the subunit function and the operating frequency, and the features of physical volume, electrical characteristics, and thermal conditions compared to two dimensional RF circuit modules.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.15-21
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• 1999

A new design of RF automatic gain control amplifier with low phase shift attenuator is proposed. By using the RF AGC amplifier, the output level of amplifier becomes to be constant. The error is 0.1dB. In addition, for arbitrary RF input power, it is possible to design the gain of amplifier to be fixed. If the constant gain is maintained, it is more reliable to make wanted IMD(Intermodulation Distortion) characteeristic amplifier.

• Journal of electromagnetic engineering and science
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• v.10 no.1
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• pp.25-27
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• 2010

This paper presents a gain and phase mismatch calibration technique for an image-reject RF receiver. The gain mismatch is calibrated by directly measuring the output signal amplitudes of two signal paths. The phase mismatch is calibrated by measuring the output amplitude of the final IF output at the image band. The calibration of the gain and phase mismatch is performed at power-up, and the normal operation of the RF receiver does not interfere with the mismatch calibration circuit. To verify the proposed technique, a 2.4-GHz Weaver image-reject receiver with the gain and phase mismatch calibration circuit is implemented in a 0.18-${\mu}m$ CMOS technology. The overall receiver achieves a voltage gain of 45 dB and a noise figure of 4.8 dB. The image rejection ratio(IRR) is improved from 31 dB to 59.76 dB even with 1 dB and $5^{\circ}$ mismatch in gain and phase, respectively.

• Journal of information and communication convergence engineering
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• v.18 no.4
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• pp.254-259
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• 2020

Phased-array antennas comprise a demanding antenna design methodology for commercial wireless communication systems or military radar systems. In addition to these two important applications, the phased-array antennas can be used in beamforming for wireless charging. In this study, a four-way analog beamforming front-end module (FEM) for a hybrid beamforming system is developed for 2.4 GHz operation. In a hybrid beamforming scheme, an analog beamforming FEM in which the phase and amplitude of RF signal can be adjusted between the RF chain and phased-array antenna is required. With the beamforming and beam steering capability of the phased-array antennas, wireless RF power can be transmitted with high directivity to a designated receiver for wireless charging. The four-way analog beamforming FEM has a 32 dB gain dynamic range and a phase shifting range greater than 360°. The maximum output RF power of the four-way analog beamforming FEM is 40 dBm (=10 W) when combined the four individual RF paths are combined.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.80-85
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• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.2
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• pp.100-108
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• 2014

In this paper, we design SSD(simultaneous single band duplex) system using RF(radio frequency) cancellation and digital cancellation. we analyze characteristic of residual self-interference after RF Cancellation signal when error of phase shifter occur in RF cancellation. When phase shifter error of $0^{\circ}$, $0.5^{\circ}$, $1^{\circ}$ and $2^{\circ}$ occur in RF cancellation, residual self-interference signal power after RF cancellation is bigger than desired signal power of distant station. So, it is impossible to receive transmit data of distant station. but we confirm that it is possible to receive transmit data of distant station by digital cancellation with frame structure. Also, in digital cancellation with frame structure, if residual self-interference signal after RF cancellation is too large then LMS algorithm requires more time to estimate self-interference channel. That is, performance degradation occurs because self-interference channel estimation has not completed in estimation frame.

• Journal of information and communication convergence engineering
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• v.2 no.3
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• pp.153-156
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• 2004

A planar active retrodirective four-element array with subharmonic phase conjugation mixers based on anti-parallel diode pairs (APDPs) is proposed. As compared to previous phase conjugation mixers using twice RF frequency for LO frequency, the proposed conjugation mixers need only half RF frequency so that it can be easily applied for millimeter-wave applications. Receiving, transmitting, local oscillator, and intermediate frequencies are 5.79, 5.81, 2.9 GHz, and 10 MHz. Monostatic RCS and Bistatic RCS measurements at source locations of $0^{\circ},\;-20^{\circ},\;and\;28^{\circ}$ show good agreement with the calculated data.

• Korean Journal of Medicinal Crop Science
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• v.9 no.1
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• pp.21-25
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• 2001

Major saponins in ginseng were analysed using reverse phase high performance liquid chromatography with binary mobile phase gradient control system instead of normal phase column. The optimum condition were as following : reverse phase column; ${\mu}{\beta}ondapak\;C_{18}$ column (Waters, $3.9mm{\times}300\;mm,\;5{\mu}m$), methyl cyanaide/water binary mobile phase gradient control system, solvent flow rate; 1.5 ml/min, and UV($203{\mu}m$ ) detector. The complete separation of ginsenoside $Rb_1,\;Rb_2,\;Rc,\;Rd,\;Re,\;Rf\;and\;Rg_1$ was achieved within 55 min. The Regression coefficients of the calibration curves for seven ginsenosides were 0.99.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1813-1819
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• 2011

In this research, the location positioning system supposed is concerned with range recognition technology using phase and magnitude of radio wave and adding technology of image histogram by vision. By the proposed technology, we design the radio transmitter and receiver and realize the measurement system, and save the data in disk that is earned from 900Mhz RF signal, middle frequency 450Khz of analog signal. Range information is earned the data through digital signal processing of IF signal. For the estimation of range measured, we analyze the difference between real range and measurement range, and also suggest the method to improve the measurement error using average processing and amplitude properties.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.