• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1370_1372
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• 2009

A conventional linear accelerator system requires a flat-topped pulse with less than $\pm$ 0.5% ripple to meet the beam energy spread requirements and to improve pulse efficiency of RF systems. A a line-type pulsed modulator is widely used in pulsed power circuits for applications such as accelerators, radar, medical radiation, or ionization systems. The high-voltage pulse generator system with an output voltage of 284 kV, a pulse width of $10{\mu}s$, and a rise time of $0.84{\mu}s$ has been designed and fabricated to drive a klystron which has 30-MW peak and 60-kW average RF output power. The high-voltage test was performed using the klystron load. This thesis describes the design and test results of high-power pulse generator system for industrial accelerator application. The experimental results were analyzed and compared with the design.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.35-41
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• 2013

An efficient multi-stage rectifier for wireless power transfer in deep implant medical devices is implemented using $0.18-{\mu}m$ CMOS technology. The presented three-stage rectifier employs a cross-coupled topology to boost a small input AC signal from the external device to produce a 1.2-1.5 V output DC signal for the implant device. The designed rectifier achieves a maximum measured power conversion efficiency of 70% at 13.56 MHz under the conditions of a low 0.6-Vpp RF input signal with a $10-k{\Omega}$ output load resistance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.9
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• pp.825-833
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• 2016

This paper introduces a direct-conversion CMOS RF transmitter for the IEEE 802.15.4 standard with a low-power high-gain up-conversion mixer designed in $0.18{\mu}m$ process. The designed RF DCT(Direct Conversion Transmitter) is composed of differential DAC(Digital to Analog Converter), passive low-pass filter, quadrature active mixer and drive amplifier. The most important characteristic in designing RF DCT is to satisfy the 2.4 GHz Zigbee standard in low power. The quadrature active mixer inside the proposed RF DCT provides enough high gain as well as sufficient linearity using a gain boosting technique. The measurement results for the proposed transmitter show very low power consumption of 7.8 mA, output power more than 0 dBm and ACPR (Adjacent Channel Power Ratio) of -30 dBc.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.83-88
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• 2007

The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.1-9
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• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.403-408
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• 2008

In this paper, the high efficiency and linearity Doherty power amplifier using DGS and adaptive bias technique has been designed and realized for 2.3GHz WiBro applications. The Doherty amplifier has been implemented us-ing silicon MRF 281 LDMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with DGS and adaptive bias technique has been 36.6% at 34.01dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.158-162
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• 1995

We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV$\_$CEO/ of 10 V, fT of 30 GHz and f$\_$max/ of 17 GHz for device with 6x14$\mu\textrm{m}$$^2$emitter size. To extract accurate equivalent parameters, the De-embedded method was applied for extraction of parasitic parameters and the calculation of circuit equations for intrinsic parameters. Based on the Load-pull method, power characteristics was simulated and measured to get the maximum output power of the device.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.2 s.332
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• pp.87-92
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• 2005

In this paper, adaptive bias circuit and PBG structure have been employed to suppress IMD and improve PAE (Power Added Efficiency) of the power amplifier. It is controlling the gate 'dc' bias voltage with the envelope of the input RF signal. and The PBG structure has been employed on the output port of power amplifier . The proposed power amplifier using adaptive bias circuit and PBG has been improved the IMG by 3 dBc, and the average PAE by $35.54\%$, respectively.

• Journal of electromagnetic engineering and science
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• v.10 no.1
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• pp.25-27
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• 2010

This paper presents a gain and phase mismatch calibration technique for an image-reject RF receiver. The gain mismatch is calibrated by directly measuring the output signal amplitudes of two signal paths. The phase mismatch is calibrated by measuring the output amplitude of the final IF output at the image band. The calibration of the gain and phase mismatch is performed at power-up, and the normal operation of the RF receiver does not interfere with the mismatch calibration circuit. To verify the proposed technique, a 2.4-GHz Weaver image-reject receiver with the gain and phase mismatch calibration circuit is implemented in a 0.18-${\mu}m$ CMOS technology. The overall receiver achieves a voltage gain of 45 dB and a noise figure of 4.8 dB. The image rejection ratio(IRR) is improved from 31 dB to 59.76 dB even with 1 dB and $5^{\circ}$ mismatch in gain and phase, respectively.